KSD5007 SAMSUNG | Alldatasheet

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SAMSUNG SEMICONDUCTOR INC _-4WE D | 2964142 OOO%SL 49 | : — NPN TRIPLE DIFFUSED . KSD5007 PLANAR SILICON TRANSISTOR . ; T= 33-13 COLOR TV HORIZONTAL’ OUTPUT . APPLICATIONS ToO-sP : High CollectorBase Voltage Ves = 1500V : ABSOLUTE. MAXIMUM RATINGS (Ta=25°C) | LEED -— L_eciite [ srmtet | rata | van Fe Collector-Base Voltage Voeo 1500 v Poe Emitter-Base Voltage Veso 7 v Collector Current le 6 A J : Collector Current (Peak) ke 16 A ‘ * | Cottector Dissipation (To=26°C) | Pe 120 w Junction Temperature ul 150 °c Storage Temperature Teta =550504° °C ELECTRICAL CHARACTERISTICS (T,=25°C) : : : 1 . [eens [mn] sowain [wn [ow [| | Collector Cutoff Current eso Vos=800V, le=O 10 pA ° Emitter Cutoff Current feo Veo=6V, l=O 1 | ma OC Current Gain bre Vee=5V, lo= 1A Collector Emitter Saturation Voltage | Vcelsat) | lo=5A, l= 1A 6 v Base-Emitter Saturation Voltage Vee(sat) | 5A, f=1A 15 v Current Gain Bandwidth Product fy Vce=10V, lo=1A MHz Fall Time t 1o=5A, Int =1A o4 | 4s 122A, RL=400 : . . ~ & SAMSUNG SEMICONDUCTOR (231

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«SAMSUNG SEMICONOUCTCR INC LYE D | 2964142 OOO7bS9 4 I NPN TRIPLE DIFFUSED KSD5010 PLANAR SILICON TRANSISTOR , ' T+ 33-4 COLOR TV HORIZONTAL OUTPUT . APPLICATIONS (DAMPER DIODE BUILT IN) To-3P(F) . High Collector-Base Voltage Vcso=1500V ABSOLUTE MAXIMUM RATINGS (T,=25°C) H Characteristic 1 symbot & So . | cottector-Base Voltage | Veco 1500 v Ce j Solector- Emitter Votage | Yeo | 800 v . | Emitter-Base Voltage 1 Veso 6 v | Collector Curent i le | 26 A , | Colector Current (Peak) im 1 40 A | Collector Dissipation (Te=25°C) | Pe i 50 w Junction Temperature iT i 160. | °c | Storage Temperature | tstg | ~s80180"] °c 1. Base 2. Cotector 3, Eritar ELECTRICAL CHARACTERISTICS (T,=25°C) H Characteristic | Symbol | Test Condition ‘ [- min | tye | mex | Unit ; Collector Cutoff Current cao} Vea=800V, le=0 | 10 vA | Emitter Cutoff Current }lewo | Ven 4V, k=O 40 | 130 | ma | DC Current Gain fee | Vee=5V, e=0.5A 8 | Collector Emitter Saturation Voltage | Vee(sat) | 1e=2A, lp=0.6A 8 v | Base-Emitter Saturation Voltage Voelsat) | 1c=2A, la=0.6A 16 | v | Current Gain Bandwidth Product | fr | Vee=10V, Io=0.5A 3 MHz Damper Diode Turn On Voltage | Vy | W258 log v Fall Time hy | \\c=2A, pt =0.64 | o4 i ys | | e2=-1.2A, Veo=200V _ | RL=1000 , c B TC 500 . . qe) . . & SAMSUNG SEMICONDUCTOR 234

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