KSD5005 SAMSUNG | Alldatasheet

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SAMSUNG SEMICONDUCTOR INC Lue O J ?abul42 ooo7eso 8 ff . 7 NPN TRIPLE DIFFUSED ~ KSD5005 PLANAR SILICON TRANSISTOR SS COLOR TV HORIZONTAL OUTPUT : T-33 “13 APPLICATIONS Top . HIGH Collector Base Voltage Vero =1500V . ABSOLUTE MAXIMUM RATINGS (T.=25°C) a : : 5m Collector-Base Voltage Veoo 1800 v aS” Collector-Emitter Voltage Veeo 800 v Ler Emitter-Base Voltage’ Vewo 7 v Z . Collector Current le 3.6 A . Collector Current (Peak) ke 10 A f Collector Dissipation (Te=25°C) Pe 80 Ww. Junction Temperature Ts 150 °c . . ‘Storage Temperature: Tstg —55~150 ne} ELECTRICAL CHARACTERISTICS (T.=25°C) . , [erwin [symict | test contion [tm [ry [tox [vot | Emitter Cutoff Current teso Ves=5V, k=O 1 mA OC Current Gain bre Vee=6V, lo= 0.58 . : Collector Emitter Saturation Voltage * | Vce(sat) ic=2.5A, le=0.8A 8 v Base Emitter Saturation Voltage Vee(sat) | lo=2.5A, lp=0.8A 1.6 Vv ° Current Gain Bandwidth-Product tr Vce=10V, e=0.5A MHz om Fall Time & Ke™*3A, bef =0.8A ° 0.4 us . ls2=-1.6A, Voc=200V . oe RL=66.70 & SAMSUNG SEMICONDUCTOR - 226

SAMSUNG SEMICONDUCTOR INC 14E D Prscaase 0007651 T I . NPN TRIPLE DIFFUSED KSD5005 PLANAR SILICON TRANSISTOR . 7-33-13 ; ‘COTTE ‘ [Tl Ere EEEEGE FAI | eee CC ' Gepost ye BS ==. eee nee 2 Cee F PEE EP Ey] . © Pee ee ' AREER) | EEE VEE rs . oc canner aan couzovoe-suriansarunaTon vouraom . fd) ce oe oe 0 Goo | bf a oe eee ow Be ess oft fd i) ee ee ee ESET as eeee os FE © cas} FF ERS =a ii EHH os CO eel EE on ee wt Ceti eth . wa chon csr ee . TURN ON TIME . ‘SAFE OPERATING AREA “HH reed manila Se oe e 2+ 4 SMTA NG ie 8 eet EIEN Nt Hy 2 enliimeean Fg eg eeeee eaceas || SSUT HM Peet Seer ete eer SEC IN GN “FERNS SS “E=EHHIRSZ AHH: Ceti FAN ———— ee : esawsunc SEMICONDUCTOR 226

SAMSUNG SEMICONOUCTOR INC. LHE 0 oo0?bSe 1 I oe - NPN TRIPLE DIFFUSED KSD5005 PLANAR SILICON TRANSISTOR . ; = "T= 33 — (3 REVERSE BIAS SAFE OPERATING AREA , POWER DERATING Seer ae en ; » = eo L ETT TTT yyy PAE FeneHH) sCeNEEE AH cL Hie trace) = § EEA ee ee ee oo FETE HEE Epi LTT TTX ETT Re Sci mt AaHie LEE IN TTT ee sasunc SEMICONDUCTOR : 227

SAMSUNG SEMICONDUCTOR INC ue o Pf zaeuz42 ooo7%s3 3 | an NPN TRIPLE DIFFUSED KSD5006 - PLANAR SILICON TRANSISTOR : os T-33-13 COLOR TV HORIZONTAL OUTPUT APPLICATIONS T0-3P HIGH Collector-Baze Vollag® Vcso=1500V. . ABSOLUTE MAXIMUM RATINGS (T, =25°C) om Otarcteiste | ym | tna | vat | yo OY, Collector-Base Vottage Veso- 1600 |-V Pe .- Collector-Emitter Voltage Veeo 800 v LP A . Emitter-Base Voltage Veso 7 v . Collector Current Ie 5 A - Collector Current (Peak) b 16 A | CF. Colléctor Dissipation (Tc=25°C) Po 120 Ww Junction Temperature Ts 1150 cc ‘Storage Temperature Tstg —55~150 Cc 1 . ° . 1, Base 2. Collector 3. Emittor ELECTRICAL CHARACTERISTICS (T.=25°C) [ecco [emai om oe [oe | | see |. |2|y Emitter. Cutoff Current teso Vea*5V, b=O 1 mA DC Current Gain ee Vee™6V, le 1A 8 . Collector Emitter Saturation Voltage -| Vce(sat) | lo=4A, la=0.8A 6 v Base Emitter Saturation Voltage Voe(sat) c= 4A, la=0.8A 1.6 Vv. Current Gain Bandwidth Product | fr Vee=10V, lo= 1A . Miz Fall Timo u e=4A, lo1=0.8A o4 | us : . lg2=—1.6A, Voc 200V RL=500 . . & SAMSUNG SEMICONDUCTOR 228 :

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