KSD5003 SAMSUNG | Alldatasheet

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SAMSUNG SEMICONDUCTOR INC. DHE D f, Rarer oooze4s 2 ff “oe "= === NPN TRIPLE DIFFUSED . KSD5003 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT : 3 APPLICATIONS (DAMPER DIODE BUILT IN) Tos HIGH CollectorBase Voltage Veeco =1500V ABSOLUTE MAXIMUM RATINGS (T.=25°C) : Collector-Base Voltage Veo 1 1500 v DB . Gollector-Emitter Voltage Veco 800 Vv ‘ Emitter-Base Voltage . Ves0 7 Vv Collector Current k 6 A Collector Current (Peak) k 16 A , Collector Dissipation (Te=25°C) | Po 120 w . Junction Temperature Tt 150 “Cc ‘Storage Temperature Tstg -s6~150 | °C . ELECTRICAL CHARACTERISTICS (T.=25°C) : [eienawine Tori tcaion [wn |e [wor | om | = 3 ef ih Emitter Cutoff Current lex Veas=4V, k=O 40 130 mA . DC Current Gain Dee Vees5V, c= 1A 8 Collector Emitter Saturation Voltage | Vce(sat) | b=65A, ls=1A . 6 Vv Base Emitter Saturation Voltage Vee(sat) ko 5A, l= 1A. 1.6 v Currerit Gain Bandwidth Product tr Vee™10V, lo 1A MHz . Damper Diode Turn On Voltage ve W=6A 2 v Fall Time 4 k=5A, Ip1=1A, 04 Pr) 1g2™~2A, Voc™200V . AL=400 . 600 (TYP) og . Ch rr & SAMSUNG SEMICONDUCTOR 5 218

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SAMSUNG SEMICONDUCTOR INC L4E of 7164142 OOO?b4b b& | NPN TRIPLE DIFFUSED KSD5003 PLANAR SILICON TRANSISTOR Ksp5003__—__PLANAR SILICON TRANSISTOR » pees ns arora ie — soimnseuene PPS = 13 COO Trin 10 . yee Gul pe Peestsesyecmmm go, } V1 TT ETT tT) . : CT ° x ete FHS © SCC catecseo TT CUTIE TTI . LLET TIN TTT . eG sausunc SEMICONDUCTOR 221

SAMSUNG SEMICONDUCTOR INC aye.o Bj 2sbuzu2 ooo7e47 6 ff os NPN TRIPLE DIFFUSED KSD5004__- PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT T: 33 \\ APPLICATIONS 10-3P HIGH Collector-Base Voltage Vco0=1500V . ABSOLUTE MAXIMUM RATINGS (Ta =25°C) « | Cotlector-Base Voltage Voso 4500 Vv y oe Collector-Emitter Voltage Veco 800 v jl g . Emitter-Base Voltage. Veao 7 v Collector Current le 25 A . Collector Current (Peak) Ps 10 A ‘ : Collector Dissipation (Te=25°C) | Pe 80 w Junction Temperature tw “160 °c Storage Temperature Teta ~s5nis0 | °C ° 1, Base 2, Cotector 3, Emittor ELECTRICAL CHARACTERISTICS (Ta =25°C) : emma mmn [ven [oe [ve [oe [| Emitter Cutoff Current lexo Vep=5V, lo O vo | oma DC Curent Gain te Vee™6V, o=0.6A Collector Emitter Saturation Voltage | Vce(sat) \\c=2A, le=0.6A 8 v Bese Emitter Saturation Voltage | Vee(sat) | lo=2A, ts=0.6A as | ov Current Galn Bandwidth Product | fr Veer 10V, le=0.5A MHz Fall Tine & Ion 2A, le 0.64 o4 | 48 : 1p2=—1.2A, Veo 200V RL=1009 . 8 sausunc SEMICONDUCTOR : 228

SAMSUNG -SEMICONDUCTCR INC LYE D | Fe Ooo7b48 1 | - NPN TRIPLE DIFFUSED KSD5004__—si. PLANAR SILICON TRANSISTOR : 7-33-13 : : EE --- ET Tt Tt Ts" veeseueeae LEP rer | geese FH peer alt tt ‘Beers Cy per Ee. ZnS aa TOE A j a PPP LITT Te TTT | ° Of 04 08 08 10 12 14 18 ell EEF Beet Aaa oS dy LU (YESS SHES _ Eee Seay i SESE SS) #2 SERA a ESSE HE SSE rria get Ae a He dL Eee HHI a) | = | Se Se oe Se ee es a oo ee eof EH eT nuwom wautaoe ‘TURN ON TIME: . ‘SAFE OPERATING AREA cee eeeeet UTI CTA Ne NN $s BAUER ESET NEON

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SAMSUNG SEMICONDUCTOR INC 2ve 0 Pf esuuny2 ooo7e49 2 I NPN TRIPLE DIFFUSED - KSD5004 “PLANAR SILICON TRANSISTOR ksp004_ PLANAR SILICON TRANSISTOR 7: ; 33-13. revere ous sar nears sive vars woe Ee KA Res S20 ee . apt Ait a a CONICET CCC ETT 8 eRe) ECE AEE a Boi Sei ee A vei CousoTonentren voutaee case tewmaties ef sausuna SEMICONDUCTOR . 224