KSD5001 SAMSUNG | Alldatasheet

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SAMSUNG SEMICONDUCTOR INC) WE D Bracuau2 ooo730 2 I ne NPN TRIPLE DIFFUSED KSD5001 PLANAR SILICON TRANSISTOR ‘COLOR TV HORIZONTAL OUTPUT : . APPLICATIONS (DAMPER DIODE BUILT IN) Tosp 7 HIGH Collector-Base Voltage Veao'=1500V . . ABSOLUTE MAXIMUM RATINGS (Ta =25°C) a Collector-Base Voltage Veco 1600 v . ro Se Collector-Emitter Voltage Veeo 800 v LE ap Emitter-Bese Voltage Vesa 7 v * Collector Current ke 3.5 A . Collector Current (Peak) le 10 A ‘ Collector Dissipation (To=25°C) | Pe 80 w Junction Temperature us 150 °c . Storage Temperature Tstg —55~«150 °c : ELECTRICAL CHARACTERISTICS (Ta =25°C) : |_—_eswetis Tm [Teens [oe [ow [or |] . Emitter Cutoff Current eso Ves=4V, le=0 40 130 "| mA . BC Current Gain re Voe=5V, Io=0.5A 8 Collector Emitter Saturation Voltage | Veelsat) | :=2.5A, e=0.8A “8 v . Base Emitter Saturation Voltage Veelsat) | b=2.5A, lp=0.8A 1.6 v ‘Current Gain Bandwidth Product tr Vee=10V, le=0.5A MHz - Damper Diode Tum On Voltage M 4=3.5A 2 Vv Fall Time oO t 1e=3A, In1=0.8A 0.4 us . e2=~1.6A, Voc=200V RL=66.79 c . TC 7 . . 500 . : : (ye) eg . & SAMSUNG SEMICONDUCTOR . . 213

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