KSD471A SAMSUNG | Alldatasheet
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SAMSUNG SEMICONDUCTOR INC HE O I 2964442 OOObI84 -T I T19- 23 KSD471A NPN EPITAXIAL SILICON TRANSISTOR ee . AUDIO FREQUENCY POWER AMPLIFIER * : © Complement to KSBS64A . To-e2 © Collector Current lo=1A ‘ * Collector Dissipation Po =600mW : ABSOLUTE MAXIMUM RATINGS (Ts =25°C) © [eames Ysera [unt | ___ | Collector-Base Voltage Veao 40 v . Collector-Emitter Voltage: Veeo 30 v ¢ Emitter-Base. Voltage Vexo 5 Vv Collector Current Io 1 A Collector Dissipation Po 800 mw Junction Temperature 7 150 °C . Storage Temperature Tstg ~55~150 | °¢ - - 1. Emitter 2. Base 3, Collector + ELECTRICAL CHARACTERISTICS (Te =25°C) : [crwncmaete | Symiet_ | totcoatone | win | re [wae | un | Collector-Emitter Breakdown Voltage | BVcco Ic=10mA, 1s=0 v Emitter-Base Breakdown Voltage BVeso le= 100yA, lc=0 v ‘Collector Cut-off Current leeo Ves =30V, le =O O14 pA DC Current Gain bre Vee =1Y, Ic=100mA 400 Collector-Emitter Saturation Voltage | Vce (sat) | lc=1A,le=O1A _ 05 v Base-Emitter Saturation Voltage Vos (sat) Io=1A, le=0.1A 12 v Current Gain-Band width Product tr Vee =6V, Ic = 10mA_ MHz Output Capacitance Cob Vee =6Y, le =0, f= MHz pF : hee CLASSIFICATION [omanean | 0 | y |e | Pm [me [ae | ae | — eee eB sawsunc SEMICONDUCTOR * 254
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