KSD362 SAMSUNG | Alldatasheet
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SAMSUNG SEMICONDUCTOR INC LHE O | 2964142 OO076b00 4 I KSD362 NPN EPITAXIAL SILICON TRANSISTOR : T~ 35-H B/W TV HORIZONTAL DEFLECTION OUTPUT =|" 10-220 * Collector-Base Voltage Vcao=150V * Collector Current Ic=5A * Collector Dissipation Pc =40W (T;=25°C) ABSOLUTE MAXIMUM RATINGS (T,=25°C) 6 Op os, gp Collector-Base Voltage Veao 150 v E Collector-Emitter Voltage Veco 70 v | tl . Emitter-Base Voltage Vewo 8 v é Collector Current Io 5 A; Collector Dissipation (To=25°C) | Pc 40 we| Junction Temperature Tj 150 °C Storage Temperature Tetg -55~+150 | °C . 1. Bese 2. Colector 3, Emitter 3 | ELECTRICAL CHARACTERISTICS (T.=25°C) Collector-Base Breakdown Voltage | BVce0 Io=tmA, le=0 150 v | Collector-Emitter Breakdown Voltage | BVceo lc=20mA, Ree = © 70 vi Emitter-Base Breakdown Voltage BVez0 le=tmA, Ic =0 8 vi Collector Cutoff Current les0 Veo =100V, le =0 wa} DC Current Gain ee Vee =5V, lc=5A. 20 | Collector-Emitter Saturation Voltage | Vce(sat) | Ic=SA, lo=O5A vi; Base-Emitter Saturation Voltage Vee (Sat) | Ic=SA, lp=05A vii Current Gain Bandwidth Product tr Vee=5V, lo=O5A MHz ! hre CLASSIFICATION |» | , | =o | ow i & SAMSUNG SEMICONDUCTOR © 178
SAMSUNG SEMICONDUCTOR INC | 44 0 BP eaeua42 ooo7L01 & | . KSD362 NPN EPITAXIAL SILICON TRANSISTOR 33.11 : * etane onanacrenisTic DecUARENT GAM AcEpeSmneel ee errr js Sees | Ga Waniiormnt CO) CPE SS ; vacncousconeaenonoe ON cocoucconcamen . . ‘COLLECTOR EMITTER SATURATION VOLTAQE COLLECTOR OUTPUT CAPACITANCE
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iSAMSUNG SEMICONDUCTOR INC nye o ff zeur42 ooorsoe 2 : KSD363 NPN EPITAXIAL SILICON TRANSISTOR Te33-U ~ B/W TV HORIZONTAL DEFLECTION OUTPUT —— * Collector-Base Voltage Visco =300V Toe : | * Collector Current Ip =6A . * Collector Dissipation Pc =40W (To =25*C) ‘ABSOLUTE MAXIMUM RATINGS (T.=25°C) . F Collector-Base Voltage Veeo 30 Lv ZL > Collector-Emitter Voltage 1 Veeo * 420 v WY . Emitter-Base Voltage Veo 8 v CZ tl Collector Current. Io 6 A . Collector Dissipation (Tc =25°C) Po 40 Ww Junction Temperature 7 150 °c Storage Temperature Tstg 55+ +150 °c . 1. fase 2. Cotecor 3. Emitter | ’ ELECTRICAL CHARACTERISTICS (T.=25°C) [senses Taras [cin on [ae [oe Collector-Emitter Breakdown Voltage | BVceo. Ic=20mA, lp=0 120 v Emitter-Base Breakdown Voltage BVeso le=-1mA, Ic=0 8 v Collector Cut-off Current Ico Vea =250V, le =O ° 1 mA DC Current Gain Dre Vee =5V, om tA 40 240 Collector-Emitter Saturation Voltage Vee (sat) IcmtA,tg=01A | 1 Vv Base-Emitter Saturation Voltage Vee (sat) dom tA, lp=0.1A 1.6 v Current Gain-Barid width Product fro. Vee=5V, Ic=05A MHz hre.CLASSIFICATION : [onion [Te Te [yd a & SAMSUNG SEMICONDUCTOR . 17
| SAMSUNG SEMICONDUCTOR INC aye o ff zauuaue ono7.03 I KSD363 : NPN EPITAXIAL SILICON TRANSISTOR Ksp363 | _NPN EPITAXIAL SILIC OR TF .33-1\\ . STATIC CHARACTERISTIC . DC CURRENT GAIN oe HHH =i EHH pee Pama : GAH el Se aa eee ICI A SS Sal . Corr Aas F BASE-EMIFTER SATURATION VOLTAGE, joe” ‘COLLECTOR OUTPUT CAPACITANCE : co . . anil iit “SSE € Ea l A eee eset ee Se Ze seal ei joos FET ert ~ Ce RES a “Freres «= LTT AT ee SATEOPERATING AREA ncn owen beraTwa Foto 3+ , Pa EEE PRCA EE JEECeoeeee) | reece, PERSE EEE LEH Hot a : PEALE, “EEK . EEEE EEE NI CEC ECL Er S| | ermusconeaecsat paamarrorne a | & SAMSUNG SEMICONDUCTOR 178
SAMSUNG SEMICONDUCTOR INC 34e 0 ff zaeuz42 coo7LoL 5 i KSD526__— NPN EPITAXIAL SILICON TRANSISTOR T-33-04 POWER AMPLIFIER APPLICATIONS ‘+ Complement to KSB596 70-220 ABSOLUTE MAXIMUM RATINGS (Ta =25°C) |___ehwactiic | symbat | ratno [unt ] | 6 op "| Cottector-Base Vottage Vowo 80 v Qe” Coltector-Emitter Voltage Veeo 80 v A oe Emitter-Base Voltage Veso 5 v jo . Collector Current ke 4 A a Le, Base Current Ly 04 A FF. Collector Dissipation (Te=25°C) Po 30 Ww . Junction Temperature ah 150 °c Storage Temperature Tstg 55150 °c i, ous 2, Cote 3. Ente | 3 | ELECTRICAL CHARACTERISTICS (Ts=25°C) . [cian [parce [om [oe [or [oe | Collector Cutoff Current - kao Vca=80V, le=O0 30 pA Emitter Cutoff Curent - leo Vea SV, lo=O 100 | yA Collector-Emitter Breakdown Voltage | BVceo -=50mA, t=O . 80 v Emitter Base Breakdown Voltage BVeo0 le=10mA, =O 5 . Vv DC Current Gain Deer Vee=5V, o=0.5A 40 240 Deez Vee=5V, k= 3A 15 50 Collector-Emitter Saturation Voltage Ves (sat) | =3A, lp=0.3A 0.45 1.6 Vv . Base Emutter On Voltage Vee(on) | Vce=6V, b=3A 1 15 v Current Gain-Bandwidth Product fr Vee™5V, b= 0.5A * 3 8 MHz Collector Output Capacitance Cob Vea=10V, le=0, f= 1MHz 90 pF " re(1) CLASSIFICATION . | cmenenen | oe fo [TY | : [mo [oe Pe fae | & SAMSUNG SEMICONDUCTOR 181
“SAMSUNG SEMICONDUCTOR INC LYE O Peseuse 0007607 ? | KSD526 NPN EPITAXIAL SILICON TRANSISTOR i een . T~33 -O4 ‘STATIC CHARACTERISTIC DC CURRENT GAIN a Ae SIC i [We ee HH W/, 4a Paes | WATT WAT ttt tt ty 06 ; See a ea) vu customer vi wn couse como PCO i ET 3 | | | | ey. t l | 3 OO TT TN. # CCC § of UTI UT HEHE H ati ast et asa Tt COMIN ECT o oo 38 re 78 °Pjeor 0009 oof G07 04 08051 3 6 10 Tare onenarwa mich “own temo | Ct tty tle | CRUE CONE Pe NIEPH PTT ATT TT I : . CCOMISRANIETT Og TEEKELLELE CCT NSN N Fa UTI NAME TT é \\ . ERSTE tt E TING TY ETH CECE veo causoeurmn wea oe om a cH SAMSUNG SEMICONDUCTOR . 182