KSD261 SAMSUNG | Alldatasheet
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SAMSUNG SEMICONDUCTOR INC. 14e D ff 7ae4L42 cooLIe & 27-27 KSD261 NPN EPITAXIAL SILICON TRANSISTOR ES LOW FREQUENCY POWER AMPLIFIER “ * Complement to KSAS43 To-92 . * Collector Dissipation Pc =500miW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Sat, Collector-Emitter Voltage Voeo 20 v . Emitter-Base Voltage Vee 5 v ‘ Collector Current le 500 mA Collector Dissipation Po 500 mw Junction Temperature iu) 150 °C Storage Temperature Tstg -s5-150 | °C 1. Emiter 2, Base 3. Colctor ELECTRICAL CHARACTERISTICS (Ta=25°C) ; [_erwmsnse Ttvmict | tconacin Yum [we | oe on Collector-Base Breakdown Voltage | BVcs0 lo=00pA, le=0 v Collector-Emitter Breakdown Voltage | BVceo lo=tomA, le=0 v Emitter-Base Breakdown Voltage BV E80 le=—100yA, Ic =0 v Collector Cutoff Current lee0, Veo =25V, te =O ot | yA Emitter Cutoff Current eso Vea =3V, le=0 O41 | pA DC Current Gain Dre Voe#1V, Io 0.14 400 Collector-Emitter Saturation Voltage | Vce (sat) | Ic=05A, Ip0.05A o4 | Vv hre CLASSIFICATION [me [oe | move | raw | ovo | a & SAMSUNG SEMICONDUCTOR . 252
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