KSD227 SAMSUNG | Alldatasheet
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ICONOUCTOR INC 14E 0 ff 7964242 DOOLIAO 2 I res-r¢ KSD227 NPN EPITAXIAL SILICON TRANSISTOR Nn rei LOW FREQUENCY POWER AMPLIFIER . © Complement to KSA842 To-82 © Collector Dissipation Po =400mW ABSOLUTE MAXIMUM RATINGS (T.=25°C) [__cowmcetate | ermvot | rata | nt | Collector-Base Voltage Veao Koy v Collector-Emitter Voltage: Veeo 25 v . Emitter-Base Voltage Veto 5 v F Collector Current Ie 300 mA Collector Dissipation Po 400 mw Junction Temperature Ty 150 °C . Storage Temperature Tg | -55-150 | °C 4. trae, tae 9, Cece ELECTRICAL CHARACTERISTICS (Ta =25°C) Ce Collector-Emitter Breakdown Voltage | BVceo Io=tOmA, le=0 Vv Emitter-Base Breakdown Voltage: BV eso le=—104A, Io =O v Collector Cut-off Current: eso Vee =26V, le=0 O41 pA Emitter Cut-off Current leno Ves =3V, lo=0 04 vA OC Current Gain tee Vea 1V, los60mA 400 Collector-Emitter Saturation Voltage Vos (sat) I¢=300MA, Is =30mA 04 v hre CLASSIFICATION ‘ Pm | mmo | wooo [soto | 88 sawsunc SEMICONDUCTOR ; : _ 250
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