KSD1692

KSD1692 SAMSUNG | Alldatasheet

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iSAMSUNG SEMICONDUCTOR INC | LHE D I 2964442 0007631 4 | KSD1692_ - NPN SILICON DARLINGTON TRANSISTOR — - a : T- 33-297 HIGH DC.CURRENT GAIN . iO LOW COLLECTOR SATURATION VOLTAGE | TO-126 | BUILT-IN A DAMPER DIODE AT E-C : HIGH POWER DISSIPATION : PT = 1.3W (T,=25°C) ABSOLUTE MAXIMUM RATINGS (T.=25°C) : ad Collector-Base Voltage Ves0 150 v . Collector-Emitter Voltage Veeo 100 v 7 Emitter-Base Voltage Veco 8 v TS, Collector Current (DC) ie 3 A . Collector Current (Pulse) Ie 6 A . Collector Dissipation (T,=25°C) Po t 3 w . “| Collector Dissipation (T.=25°C) | Pe 16] Ww 1 BS Songs Tomes Toto ~6oni60 6 1+ Emitier 2. Collector 9. Base : * PW&10 mS duty cycle < 50% . ELECTRICAL CHARACTERISTICS (T, =25°C) - . [sccm [sown [om [ te [oe [ Sa Emitter Cutoff Current - exo Ves=5V, Ic=O . 2 mA "OC Current Gain ~ Pres Vee 2V, lem 1.64 2000 “20000 tree Voe=2V, b=3A 1000 |" Collector-Emitter Saturation Voltage | Vce(sat) [cm 1.5A, l= 1.5mA 09 1.2 v |" Base-Emitter Saturation Voltage Vee(sat) Io@1.5A, lp=1.5mA 1.5 2 v . Tum On Time | ten fom 1.5A, lor —le2=1.5mA 0.6 BS ‘Storage Time tag R.=270, Veo™40V 2 #S Fall Time. . & 1 us * Pulse test: PW < 350ys, duty cycle < 2% Pulsed . c . hre (1) CLASSIFICATION . : ; [omtonn | eo [oy Te )° [er [alee [eros | aan | | * + RR . : R1=8 ko e R2=0.6 ko . . & SAMSUNG SEMICONDUCTOR 206

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| SAMSUNG SEMICONDUCTOR INC LE D I 264142 0007633 8 ff KSD1693. NPN SILICON DARLINGTON TRANSISTOR x . T-33-29 ; HIGH DC CURRENT GAIN — . LOW COLLECTOR SATURATION. VOLTAGE ro.126 BUILT-IN A ZENER DIODE AT B-C AND A DAMPER DIODE AT E-C - ~ HIGH POWER DISSIPATION : PT = 1.3W (T, = 25°C) ~ ABSOLUTE MAXIMUM RATINGS (T.=25°C) © , |__etwrctite | exter [tng | vat | Collector-Base Voltage Ves 60410 Vv Collactor-Emitter Voltage Vero sozto | v . Emitter-Base Voltage. Vee 8 v Collector Current (DC) le » 8 A Collector Current (Pulse) le + 6 A : Collector Dissipation (T4=25°C) | Pc 1.3 w Collector Dissipation (T2=25°C) | Pc 15 w 1. Emiter 2, Colactor 9 Base Junction Temperature ul 160 °c J : ~ | Storage Temperature Tstg ~55~160 | °C - "© PW&10mS, duly cycle<50% . . ELECTRICAL CHARACTERISTICS (T,=25°C). [cece [ome [force [on [ow [me [ or] Cotector-Emitter Voltage Veco | = 10mA, Raceeo 60 | “60 7o} v Collector Cutoff Current eso Ves™40V, le=0 10) “yA Emitter Cutoff Current exo Ves™5V, le=0 : . 2] mA DC Current Gain - Der Vee=2V, =1.6A 2000 20000 hee Voe=2V, eA 1000 |" Colector-Emitfer Saturation Voltage | Vce(sat) e=1.5A, p= 1.5mA 0.9 1.2 v * |*Base-Emitter Saturation Voltage ‘Vee(sat) eo 1.6A, lo 1.5mA . 1.5 2}-Vv Tum On Time ten 1e=1.5A, b= —laa=1.6MA 06 1s ‘Storage Time tay Fe=279, Voo=40V 2 1S . Fait Time oo “ht . 1 ry * Pulse teat: PW < 35048, duty cycle < 2% Pulsed - . hee (1) CLASSIFICATION . . pe IK : . - : R, Ry . Ri=8 ko . : . . R2=0.6 ka : - 208 & SAMSUNG SEMICONDUCTOR

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;SAMSUNG SEMICONDUCTOR INC! —_44E D ‘| 7ab4L42 ooo7b3s 1 ff NPN TRIPLE DIFFUSED - KSD5000 PLANAR SILICON TRANSISTOR ee . . T- 33-43 “COLOR TV HORIZONTAL OUTPUT ; - - . APPLICATIONS (DAMPER DIODE BUILT IN) r03P ; ; HIGH Collector-8ase Voltage Veo =1500V ABSOLUTE MAXIMUM RATINGS (T.=25°C) Collector-Base Voltage Vos 1600 v RS sop Emitter-Base Voltage Veso 7 v Collector Current Ie 25 A . Collector Current (Peak) Ie 10 A ’ Collector Dissipation.(Te=26°C) | Po 80 w Junction Temperature: - qT 150 °C ‘Storage Temperature Tstg -85~150 °c ELECTRICAL CHARACTERISTICS (T. =25°C) . - [eae ar [seca Doe] Emitter Cutoff Current . lexo Ves=4V, k=O 130 mA DC Current Gain tee Vce=5V, lo=0.5A . Collector Emitter Saturation Voltage | Vee(sat) | lb=2A, lb=0.6A 8 v . Base Emitter Saturation Voltage Vee(sat) | Ic=2A, Ip=0.6A 156 Vv . Current Gain Bandwidth Product fr Vee=10V, ke=0.5A MHz Damper Diode Tum On Voltage Me h=2.5A, 2 v Fall Time t b= 2A, lg1=0.6A, 04 us . Ie2=—1.2A, Voc=200V . RL=1000 Cc 500 . (TYP) E . ——SSSSSSSSSSSSSSSSSSSAaae & SAMSUNG SEMICONDUCTOR 210

_ SAMSUNG SEMICONDUCTOR INC LYE 0 Bruise Q0076364 3 | oem “NPN TRIP VIFFUSED KSD5000 PLANAR SILICON TRANSISTOR 7 ‘STATIC CHARACTERISTIC (BASE-EMITTER ON VOLTAGE 2sr7 erm ——- aa = See CE ee CS | 2 | eee ECC | 22a ee . Pyrreerrr ry gt tt ee ATT SER Ey = 14 Cerro eCeOeeeee . - _an i: SACCEEEEEEH ECE MEE EEE} “ES Pe] Lit retry) ttt ri VesfV). COLLECTOREMITTER VOLTAGE ‘ ‘VexiV), BASE-EMITTER VOLTAGE oO DC CURRENT GAIN. * COLLECTOR-EMITTER SATURATION VOLTAGE Fe | | ee ee . aE Ae th : | i cee 3 an TT it ENC A oe oe | ee ee eee eee WEEE cot CET i a co L EE TT ; TURN ON TE - SARE OPERATING AREA - SE Eee a ete ere aad - | | eset nial

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SAMSUNG SEMICONOUCTCR . INC _14E o tq ?164L42 O007637 5 1 : ; NPN TRIPLE DIFFUSED KSD5000 : PLANAR SILICON TRANSISTOR . REVERSE BIAS SAFE OPERATING AREA. . POWER DERATING . 10 ee. t00 SSS seiiiaee sees eeiin [TT TTTITLoeo oo HEH Hr oH HHH Gf UM CITI HNECEEEEH i Ame mf & TTP REEL] SUE UN, NEE . FEE EH Pa . . oat CETL EH LTE EEX LET oolescsae HT LTTE THI ttt TTIN Fy 10 20 60 100 200 00 1,000- 2,000 6,000 19,000 26 60 75 100 126 150 176 200 226 250 * VeelV), COLLECTOR-EMITTER VOLTAGE ‘Te(*C), CASE TEMPERATURE OE : +H SAMSUNG SEMICONDUCTOR . 212