KSD1616 SAMSUNG | Alldatasheet
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SAMSUNG SEMICONDUCTOR Inc 34 0 J 7ae4a42 cooLaaG sf 727-25 KSD1616/1616A NPN EPITAXIAL SILICON TRANSISTOR ll rch AUDIO FREQUENCY POWER AMPLIFIER : MEDIUM SPEED SWITCHING ros * Complement to KSB1116/1116A . ABSOLUTE MAXIMUM RATINGS (T, =25°C) a Collector-Base Voltage : .KSD1616 Veso. 60 Vv : KSD1616A 120 Vv ‘ Collector-Emitter Voltage : KSD1616 Vero. 50 v << : KSD1616A 60 vi Emitter-Base Voltage Veo 6 v Collector Current (DC) Ie 1 A * Collector Current (Pulse) Ie 2 A 7 Collector Dissipation Po 0.75 Ww Junction Temperature 7 150 | °C 1. Eniter 2. Cotector 3, Base a Storage Temperature Tstg 55150! °C * PWS10ms, Duty Cycles50% ELECTRICAL CHARACTERISTICS (T, =25°C) (seem ome | ce [oe Po] Collector Cutoff Current leno Vea=60V, 1e=0 100 nA Emitter Cutoff Current les0. Ves=6V, lc=O 100 nA * DC Current Gain : KSD1616 Dees Vce=2V, c= 100mA 135 600 > KSDI616A 136 400 Deez Vee=2V, lo= 1A a1 Base Emitter On Voltage Vee (on) | Vce=2V, c= SOMA 600 640 700 mv * Collector Emitter Saturation Voltage Vee (sat) | [c= 1A, le=SOmA 0.15 0.3 Vv |* Base Emitter Saturation Voltage Vae (Sat) | c= 1A, lb=5OmA. 09 1.2 v Output Capacitance -| Cob Vea=10V, le=O, f= 1MHz 19 pF Current Gain Bandwidth Product fr Vce=2V, le=100mA 100 160 MHz Tum On Time ton Vec™ 10V, c= 100mA 0.07 ws Storage Time ts Ig1=—lg2=10MA_ 0.95 us Fall Time tt Vee (off}=—20—3V 0.07 ws * Pulse Test: PWS350ps, Duty Cycles2% Pulsed hre(1) CLASSIFICATION [ cusineaon | oy foe | + | ——_——— SSSSSSSSSSSSSSSSSSsSsssee rH SAMSUNG SEMICONDUCTOR ; 200
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