KSC1070 SAMSUNG | Alldatasheet

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SAMSUNG SEMICONDUCTOR INC LYE D | ?964L42 O00b870 & l 'T-B3ILF KSC1070 (1)/1070 (2) NPN EPITAXIAL SILICON TRANSISTOR NEY UHF TV TUNER RF AMPLIFIERLIFIER, MIXER . DISK MOLD bis TR . HIGH PG, LOW NF (PG: 188, NF: 2.8dB, @900MH2) ABSOLUTE MAXIMUM RATINGS (T, =25°C) f : F Sa - 3 Collector-Base Voltage Vowo 30 v Wi Collector-Emitter Voltage Vero 25 v /, . : Emitter-Base Voltage Vewo 3.0 v Collector Current le 20 mA Collector Dissipation Po 200 mW : Junction Temperature Ti 150 °c Storage Temperature Tslg -85~150 | °c . : 1 ete 2, Bas 3. Cte ELECTRICAL CHARACTERISTICS (T,=25°C) [esas Yomi [vance [ie [we ot Collector Cutoff Current coo - | Voa=25V, le=O 0.1 yA DC Current Gain bre Vee=10V, lo=SmA 40 80 | 200 Current Gain-Bandwidth Product fr Vee=10V, e=~—3mA 760 | 1000 MHz Output Capacitance Cob f= 1MHz, Voo=10V, le=0 065 | 08 | pF Noise Figure NF Vos=10V, e=~—3mA 28.) 40 | dB 1=900MHz Power Gain PG Vea=10V, le=—3mA 14 18 eB . f=900MHz AGC Current: Only to. C1070 (1) | Ince le of PG —300B -8 “1 mA t=900MHz KSC1070 (1): hoc Classification P: ~9~—11mA Q: —8~—10mA : KSC1070 (2): Hre Classification F: 40200 ———— & SAMSUNG SEMICONDUCTOR "140

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AMSUNG SEMICONDUCTOR INC. L4HE O Prscuaua o00ba73 1 | : a . - KSC1070 (1)/1070 (2) NPN EPITAXIAL SILICON TRANSISTOR S115 7 yio-t CHRACTERISTIC yib-t CHRACTERISTIC . TOOL Fee tt EEE He CeSccceert Tee RR EECCA yrs ee JOC es | [Toes Mel coo Heer CoC AZZ {FEE fC EEE Ee Hee wel EEE EEE ca | eee EET PEE Merry ie non comueriee yfo-f CHRACTERISTIC 5 yob-f CHRACTERISTIC 3 | Fee HE McaepzaansNes! Coy PZT EN COAL 1 ree | POA = colute i rod Eee ee Pere vnrn covert van coeur - Gpb-le, NF-le CHRACTERISTIC 900 MHz PG, NF TEST CIRCUIT

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