KSC1009 SAMSUNG | Alldatasheet
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8eao@S$—0N=NaN0—0NSNSSS———SSSSSSSS a — = SAMSUNG SEMICONDUCTCR INC LYE O Bessy Oogbab4 4 | KSC1009 NPN EPITAXIAL SILICON TRANSISTOR eee - T-29-23 HIGH VOLTAGE AMPLIFIER * High Collactor-Base Voltage Veoo=160V To#2 * Collector Current Ic=700mA * Collector Dissipation Pc =800mW - * Complement to KSA709 ABSOLUTE MAXIMUM RATINGS (Ts =25°C) Collector-Base Voltage Veeo 160 v . Collector-Emitter Voltage Veeo 140 v ' Emitter-Baso Voltage Veso 8 v Collector Current le 700 mA Collector Dissipation Pe 800 | mw Junction Temperature i] 150 °C Storage Temperature Bg -85~150 | °C 1, Emiter 2. Bane 3, Collector ELECTRICAL CHARACTERISTICS (Ta=25°C) Collector-Base Breakdown Voltage | BVcso 1c=100pA, le =0 160 v Collector-Emitter Breakdown Voltage | BVceo Ic=10mA, Ip =0 140 v Emitter-Base Breakdown Voltage BVe50 le=—10yA, Io=0 8 v Collector Cutoff Current (Continuous) | coo Vea =60V, le =0 O14 | 4A - Emitter Cut-off Current leso Ves =5V, Ic=0 0.1 wA DC Current Gain bre Vee =2V, lo =50mA 40 240 Collector-Emitter Saturation Voltage | Vce (sat) | le=200mA, la =20mA o2 | o7 | v Base-Emitter Saturation Voltage Vor (sat) Ie =200mA, Ip =20mA 0.86 1.0 v Current Gain-Bandwidth Product fr Ver =10¥, Ic =50mA 30 50 MHz Output Capacitance Cob Vea =10V, le=0 8 F t=iMHz e : hre CLASSIFICATION oo kw & SAMSUNG SEMICONDUCTOR . 138
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