KSC1008 SAMSUNG | Alldatasheet
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SAMSUNG SEMICONDUCTOR INC JHE D | 7964142 OOOLSLE 4 | 7-29-23 KSC1008 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING : Tos2 : © Complement to KSA708 . ‘© Bigh Collector-Base Voltage Vcso=80V . . * Collector Current Ic=700mA * Collector Dissipation Pc =800mW ABSOLUTE MAXIMUM RATINGS (T,=25°C) [ance [aris [me _[ ot . Collector-Base Voltage Veso 80 v ‘ . Collector-Emitter Voltage Veeo 60 Vv Emitter-Base Voltage Veso 8 v Collector Current Ic 700 mA . Collector Dissipation Po 800 mw Junction Temperature iu) 150 °C See enature the | -sbu150 | °c 1, Emir 2. Bate 3. Colac ELECTRICAL CHARACTERISTICS (Ta=25°C) [esas [oma [ ttm [ wm [oe | wm [om] Collector-Base Breakdown Voltage BVco0 Ic =100pA, le=0 80 Vv Collector-Emitter Breakdown Voltage | BVceo Ic=10mA, te=0 60 v Emitter-Base Breakdown Voltage BVe20 le=-104A, Io =O 8 v Collector Cut-off Current les0. Vee =60Y, le=0 O41 vA Emitter Cut-off Current leno Ves =5V, Ic=0 01 vA OC Current Gain fee Vee =2V, Ic=50mA 40 400 Collector-Emitter Saturation Voltage Vee (sat) Ic =500mA, Ip =50MA 0.2 0.4 v Base-Emitter Saturation Voltage Vee (sat) | 1c=500mA, lp =50mA 0.86 WwW Vv Current Gain-Bandwidth Product fr Vee =10V, lo =50mA 30 50 MHz Output Capacitance Cob Ves =10V, le =O 8 Fe . faiMHz i hre CLASSIFICATION = , [eonmenn | » Te | y | s ww | rom | vse | ae e Deanne EEE EERE RE ena & SAMSUNG SEMICONDUCTOR : 136
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