KBU801 KISEMICONDUCTOR | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
- Low Forward Voltage Drop
- Ideal For Printer Circuit Boards
- High Current Capability and High Reliability
- High Surge Current Capability Maximum Ratings
- Operating Temperature: -50°C to +150°C
- Storage Temperature: -50°C to +150°C Catalog Number Device Marking Maximum Reccurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage KBU801 KBU8A 50V 35V 50V KBU802 KBU8B 100V 70V 100V KBU803 KBU8D 200V 140V 200V KBU804 KBU8G 400V 280V 400V KBU805 KBU8J 600V 420V 600V KBU806 KBU8K 800V 560V 800V KBU807 KBU8M 1000V 700V 1000V Electrical Characteristics @ 25°C Unless Otherwise Specified Average Forward Current I F(AV)
8 A Tc = 100°C
I FSM 200A 8.3ms, half sine Maximum Instantaneous Forward Voltage V F 1.0V T C = 25°C Maximum DC Reverse Current At Rated DC Blocking Voltage I R 10 µA 300mA T C = 25°C T C = 100°C *Pulse Test: Pulse Width 300µsec, Duty Cycle 2% (NOTE 1,2 ) KBU DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A .895 .935 22.7 23.7 B .600 .700 16.8 17.8 C .740 .780 18.8 19.8 NOM D .15∅ x .23L 3.8∅ x 5.7L HOLE F .100 -- 25.4 --- J .268 .280 6.8 7.1 L .180 .220 4.6 5.6 3PL A C B D E F G J K L A - C G .048 .052 1.2 1.3 KI SEMICONDUCTOR KI SEMICONDUCTOR