KBU600-G COMCHIP | Alldatasheet
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Case: Molded Plastic Terminals: Plated Leads Solderable per MIL STD-202, Method 208 Weight: 1.7 grams (approx.) Mounting Position: Any Marking: Type Number Mechanical Data: Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability Ideal for Printed Circuit Boards Features: Reverse Voltage: 50 ~ 1000 Volts Forward Current: 6.0 Amp KBU600-G thru 610-G (RoHS Device) Silicon Bridge Rectifiers “-G” suffix designated RoHS compliant version Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ T A = 100ºC Non-Repetitive Peak Forward Surge Current 8.3ms Single half Sine-Wave Superimposed on rated load (JEDEC Method) Forward Voltage (per element) @ I F=3.0A Peak Reverse Current @T C=25ºC At Rated DC Blocking Voltage @T C=100ºC Rating for Fusing (t<8.3ms) (Note1) Typical Thermal Resistance (Note2) Operating and Storage Temperature Range Note: 1. Non-repetitive for t>1ms and <8.3ms. Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IR I2t RθJC Tj TSTG KBU 600-G KBU 601-G 100 KBU 602-G 200 140 KBU 604-G 400 280 6.0 250 1.0 1.0 166 4.2 -65 to +150 UNIT V V A A V uA mA A2S K/W ºC KBU 606-G 600 420 KBU 608-G 800 560 KBU 610-G 1000 700 CHARACTERISTICS _ _ _ + A B C D E LK J G P N M Dim A B C D E G H J K L M N P Min 22.7 3.80 4.20 1.70 10.30 4.50 4.60 25.40 16.80 6.60 4.70 1.20 Max 23.70 4.10 4.70 2.20 11.30 6.80 5.60 19.30 17.80 7.10 5.20 1.30 All Dimensions in mm KBU H
KBU600-G thru 610-G (RoHS Device) Silicon Bridge Rectifiers “-G” suffix designated RoHS compliant version 20 40 60 80 100 120 140 Tc, CASE TEMPERATURE (ºC) Fig. 1 Forawrd Current Derating Curve I(AV), Average Output Current (A)Single Phase Half Wave 60Hz Resistive or Inductive Load 100 1.0 0.1 VF, Instanteous FWD Voltage (V) Fig.2 Typical Forward Characteristics, per element IF, Instantaneous FWD Current (A) 250 200 150 100 1 10 100 400 100 1 10 100 Number of Cycles at 60Hz Fig.3 MAx Non-Repetitive FWD Surge Current 8.3ms Single Half Sine-Wave Jedec Method IFSM, Peak FWD Surge Current (A) VR, Reverse Voltage (V) Fig 4. Typical Junction Capacitance Per Element CJ, Capacitance (pF) Tj = 25ºC Pulse Width = 300ms Tj=25ºC