KBU4005 HDSEMI | Alldatasheet
Document overview
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Technical content
Features
o 4.0A
- VRRM 50V-1000V
- High surge current capability
Applications
Polarity: Color band denotes cathode K BU4XX H igh Diode Semiconductor KBU Plastic-Encapsulate Bridge Rectifier General purpose 1 phase Bridge rectifier applications K BU +~~_ KBU4005 THRU KBU410 Item Symbol Unit Conditions KBU4 005 01 02 04 06 08 10 Repetitive Peak Reverse Voltage V RRM V 50 100 200 400 600 800 1000 Average Rectified Output Current I O A 60H Z sine wave, R- load Tc=100℃ 4 Surge(Non-repetitive)Forward Current I FSM A 60H Z sine wave, 1 cycle, T a =25℃ 150 Current Squared Time I t A s 1ms≤t＜8.3ms T j =25℃,Rating of per diode Storage Temperature T stg -55 ~+150 Junction Temperature T j -55 ~+150
Electrical Characteristics
a =25℃ Unless otherwise specified） Item Symbol Unit Test Condition Max Peak Forward Voltage V FM V I FM =4A Pulse measu r ement Ratin g of p e r diode 1.0 Peak Reverse Current I RRM μA V RM RRM , Pulse measurement, Rating of per diode Thermal Resistance R θ J-A ℃/W Between junction and ambient (1) R θ J-C Bet w een j unction and case 7.5 (2)
H igh Diode Semiconductor FIG.3-MAXIMUM NON-RETETITIVE PEAK FORWARD SURGE CURRENT NUMBER OF CYCLES AT 60H Z PEAK FORWARD SURGE CURRENT AMPERES 250 200 100 150 100 0.1 100 120 140 1.0 FIG.4-TYPICAL REVERSE CHARACTERISTICS PERCENT OF RATED PEAK REVERSE INSTANTANCEOUS REVERSE CURRENT, MICRAMPERES T J =25 T J =100 FIG.2 TYPICAL INSTANTANEOUS FORWARD CHARACTERISTIC INSTANTANCEOUS FORWARD CURRENT, AMPERES INSTANTANEOUS FORWARD VOLTAGE，VOLTS 100 0.1 1.2 1.1 1.0 0.9 0.8 0.7 0.6 4.0 1.0 0.4 0.2 1.3 T J =25 PULSE WIDTH=300S 1%DUTY CYCLE FIG.5-TYPICAL JUNCTION CAPACITANCE PER ELEMENT CAPACITANCE,(pF) REVERSE VOLTAGE,VOLTS T J =25 250 200 150 100 0.1 1.0 100 HEAT SINK MOUNTING MOUNTED ON4*4 INCH COPPER PC BOARD.TA .51(1.27mm)LEAD LENGTH FIG.1-DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUTCURRENT AMPERES CASE TEMPERATURE, 50 1000 150 1.0 5.0 4.0 3.0 2.0 6.0 8.0 7.0 The cruve graph is for reference only, can't be the basis for judgment
H igh Diode Semiconductor K BU Dimensions in inches and (milimeters) .935(23.7) .895(22.7) .600(16.8) .700(17.8) 300 (7.5) .780(19.8) .740(18.8) (25.4) 1.00 MIN. .052(1.3)DIA. .048(1.2)TYP. .071(1.8) .180(4.6) .256(6.5) .276(7.0) .15 X23L (3.8 X5.7L) HOLE THRU .165(4.2)*45°