KBU1001 KISEMICONDUCTOR | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
- Low Leakage
- Low Forward Voltage
- Any Mounting Position
- Silver Plated Copper Leads DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE D .15∅ x .23L 3.8∅ x 5.57L HOLE Maximum Ratings
- Operating Temperature: -55°C to +150°C
- Storage Temperature: -55°C to +150°C Catalog Number Device Marking Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage KBU1001 KBU10A 50V 35V 50V KBU1002 KBU10B 100V 70V 100V KBU1003 KBU10D 200V 140V 200V KBU1004 KBU10G 400V 280V 400V KBU1005 KBU10J 600V 420V 600V KBU1006 KBU10K 800V 560V 800V KBU1007 KBU10M 1000V 700V 1000v Electrical Characteristics @ 25°C Unless Otherwise Specified Average Forward Current I F(AV)
10 A T
J = 65°C Peak Forward Surge Current I FSM 300A 8.3ms, half sine Maximum Forward Voltage Drop Per Element V F 1.1V I FM = 5.0A; T J = 25°C* Maximum DC Reverse Current At Rated DC Blocking Voltage I R 10µA 100mA T J = 25°C T J = 100°C *Pulse test: Pulse width 300 µsec, Duty cycle 1% A B C D E F G H J K L A KI SEMICONDUCTOR KI SEMICONDUCTOR