KBP005 HDSEMI | Alldatasheet
Document overview
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Technical content
Features
o 1.5A
- VRRM 50V-1000V
- High surge current capability
Applications
Polarity: Color band denotes cathode K BPXX H igh Diode Semiconductor KBP Plastic-Encapsulate Bridge Rectifier General purpose 1 phase Bridge rectifier applications K BP KBP005 THRU KBP10 Item Symbol Unit Conditions KBP Repetitive Peak Reverse Voltage V RRM V 50 100 200 400 600 800 1000 Average Rectified Output Current I O A 60H Z sine wave, R- load, T a =30℃ 1.5 Surge(Non-repetitive)Forward Current I FSM A 60H Z sine wave, 1 cycle, T a =25℃ Current Squared Time I t A s 1ms≤t＜8.3ms T j =25 ,Rat℃ ing of per diode 26.5 Storage Temperature T stg -55 ~+150 Junction Temperature T j -55 ~+150
Electrical Characteristics
a =25℃ Unless otherwise specified） Item Symbol Unit Test Condition Max Peak Forward Voltage V FM V I FM =1.5 A, Pulse measu remen t, Rating of per diode 1.1 Peak Reverse Current I RRM μA V RM RRM , Pulse measurement, Rating of per diode Thermal Resistance (1) R θ J-A /W℃ Between junction and ambient R θ J-L Betwee n j unction and lead （Notes）: pads 005 01 02 04 06 07 08 10 700
H igh Diode Semiconductor 0.1 0.2 0.5 VF(V) IF(A) FIG3:Instantaneous Forward Voltage 1.0 5.0 0 20 40 60 80 100 0.01 0.1 1.0 100 Voltage(%) IR(uA) Tj=125 Tj=25 FIG4:Typical Reverse Characteristics Io(A) Ta( FIG1:Io-Ta Curve 0.5 0 50 150100 1.0 1.5 2.0 IFSM(A) 2 5 10 20 50 100 FIG2:Surge Forward Current Capadility Number of Cycles
H igh Diode Semiconductor K BP Dimensions in inches and (millimeters) + AC - .457(11.6) .434(11.0) .500(12.7) MIN .053(1.35) .043(1.10) .035(0.90) .140(3.60) SPACING .158(4.01) .567(14.4)