KBJ4A KISEMICONDUCTOR | Alldatasheet
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Technical content
Features
Electrical Characteristics @ 25 °C Unless Otherwise Specified Average Forward Current I F(AV) 4.0A T C = 100°C Peak Forward Surge Current I FSM 150A 8.3ms, half sine Maximum Forward Voltage Drop Per Element V F 1.0V I FM = 2.0A per element; T A = 25°C* Maximum DC Reverse Current At Rated DC Blocking Voltage I R 10µA T A = 25°C T C = 100°C 50 to 1000 Volts 500µA
- Diff used Junc tion
- Low Forward Voltage Drop
- High Curr ent Capability
- Operating Junction Temperature: -5 5 °C to + 1 50 °C
- Storage Temperature: -55°C to +150°C I t Rating for fusing I t 93A S (t<8.35ms) ++ ++ A C D G H B N M L JI K O E F P KBJ4A DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE C .154 .161 3.90 4.10 D .173 .189 4.40 4.80 F .122 .134 3.10 3.40 A .976 .992 24.80 25.20 B .579 .602 14.70 15.30 E .134 .150 3.40 3.80 G .130 .146 3.30 3.70 I .059 .075 1.50 1.90 J .677 .700 17.20 17.80 H .035 .043 0.90 1.10 L .098 .114 2.50 2.90 M .024 .031 0.60 0.80 N .366 .381 9.30 9.70 P .122 .134 3.10 3.40 O .118X45 3.0X45 ° ° K .287 .303 7.30 7.70 UL Recognized File # E165989 KI SEMICONDUCTOR KI SEMICONDUCTOR