TK80E08K3 TOSHIBA | Alldatasheet

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U −MOSᶚ) TK80E08K3 „ E-Bike/UPS/Inverter z Low drain−source ON resistance : R DS (ON) = 7.5 mΩ (typ.) z High forward transfer admittance : |Y fs| = 135 S (typ.) z Low leakage current : I DSS = 10 µA (max) (VDS = 75 V) z Enhancement mode : V th = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage V DSS 75 V Drain−gate voltage (RGS = 20 kΩ) V DGR 75 V Gate−source voltage V GSS ±20 V DC (Note 1) I D 80 A DC (Note 1,4) I D 70 A Drain current Pulse (Note 1) I DP 240 A Drain power dissipation (Tc = 25°C) P D 200 W Single pulse avalanche energy (Note 2) EAS 107 mJ Avalanche current I AR 40 A Repetitive avalanche energy (Note 3) E AR 20 mJ Peak diode recovery dv/dt (Note 5) dv/dt 12 V/ns Channel temperature (Note 4) T ch 175 °C Storage temperature range (Note 4) T stg −55~175 °C Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R th (ch−c) 0.75 °C / W Thermal resistance, channel to ambient Rth (ch−a) 83.3 °C / W Note 1: Ensure that the channel temperature does not exceed 175°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 100 µH, RG = 25 Ω, IAR = 40A Note 3: Repetitive rating: pulse width limited by maximum channel temperature Note 4: Tc=100ˆ Note 5: IDR ʽ80A,di/dtʽ160A/µs, TchʽTch max. This transistor is an electrostatic-sensitive device. Please handle with caution. Note : Using continuously under heavy loads (e.g. the application of high temperature/curre nt/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significant ly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Met hods”) and individual reliabili ty data (i.e. reliability test report and estimated failure rate, etc).Thermal Characteristics JEDEC - JEITA - TOSHIBA 2-10X1A Weight: 1.9 g (typ.) Unit: mm (BUF %SBJO 4PVSDF ʶ ʶ ʶ ʶ ʶ ʶ ʶ ʶ ʶ ʶ Їʶ ʶ Ї ". JEDEC - JEITA - TOSHIBA 2-11G1A Unit: mm Weight: 1.9 g (typ.) (BUF %SBJO 4PVSDF

Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ±20 V, VDS = 0 V — — ±1 µA Drain cut−off current I DSS V DS = 75 V, VDS = 0 V — — 10 µA Drain−source breakdown voltage V (BR) DSS I D = 10 mA, VGS = 0 V 75 — — V V (BR) DSX I D = 10 mA, VGS = -20 V 45 — — V Gate threshold voltage V th V DS = 10 V, ID = 1 mA 2.0 — 4.0 V Drain−source ON resistance R DS (ON) V GS = 10 V, ID = 40 A — 7.5 9.0 m Ω Forward transfer admittance |Y fs| V DS = 10 V, ID = 40 A 67 135 — S Input capacitance C iss — 3600 — Reverse transfer capacitance C rss — 350 — Output capacitance C oss VDS = 10 V, VGS = 0 V, f = 1 MHz — 500 — pF Rise time t r — 16 — Turn−on time t on — 33 — Fall time t f — 13 — Switching time Turn−off time t off — 63 — ns Total gate charge (Gate−source plus gate−drain) Qg — 75 — Gate−source charge Q gs — 44 — Gate−drain (“miller”) charge Q gd VDD ≈ 60 V, VGS = 10 V, ID = 80 A — 31 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 80 A Pulse drain reverse current (Note 1) IDRP — — — 240 A Forward voltage (diode) V DSF I DR = 80 A, VGS = 0 V — — −1.5 V Reverse recovery time t rr — 45 — ns Reverse recovery charge Q rr IDR = 80 A, VGS = 0 V dIDR / dt = 100 A / µs — 72 — µC Marking Lot No. K80E08K3 Part No. (or abbreviation code) 0 V 10 V VGS VDD ∼ − 35 V ID = 40 A VOUT 4.7 Ω Duty < = 1%, tw = 10 µs 0.9 Ω Lot No. K80E08K3 Part No. (or abbreviation code) 2ʵ11G1A 2ʵ10X1A

VGS = 10 V 11 0 1000 100 100 10 1000 1000 Tc = −55°C 100 100 1 100 8 12 16 20 0.8 1.2 1.6 2.0 0.4 ID = 80 A 4 10 160 0 2 6 Tc = −55°C 100 120 23 4 5 160 VGS= 5 V 6.25 5.5 6.5 120 5.25 VGS = 5 V 5.25 5.5 5.75 100 6.5 6.25Common source Tc = 25°C Pulse Test ID – VDS ID – VDS ID – VGS VDS – VGS Common source Tc = 25°C Pulse Test |Yfs| – ID RDS (ON) – ID Drain-source voltage V DS ( V ) Drain current I D ( A ) Drain-source voltage V DS ( V ) Drain current I D ( A ) Gate-source voltage V GS ( V ) Drain current ID (A) Gate-source voltage V GS ( V ) Drain current I D (A) Drain current I D (A) Drain-source ON resistance RDS (ON) (m Ω) Drain-source voltage V DS (V) Forward transfer admittance ⎪Yfs⎪ (S) Common source Tc = 25°C Pulse Test Common source Tc = 25°C Pulse Test Common source VDS = 10 V Pulse Test Common source VDS = 10 V Pulse Test 5.75

VDD=60V VGS 0 0 0 60 120 100 20 80 40 −80 0 40 80 120 160 −40 1000 10000 1 0.1 100 10 Ciss Coss Crss 100 0 −0.3 −0.9 1000 100 VGS = 0 1 −0.6 −1.2 ID = 20 A −80 0 40 80 120 160 −40 80 A Vth − Tc RDS (ON) − Tc IDR − VDS PD − Tc Common source Tc = 25°C Pulse Test Common source VGS = 0 V f =1MHz Tc = 25°C Common source VDS = 10 V ID = 1mA Pulse Test Case temperature Tc (°C) Gate threshold voltage Vth (V) Case temperature Tc (°C) Total gate charge Q g (nC) Capacitance C (pF) Capacitance – VDS Drain-source voltage V DS (V) Drain-source ON resistance RDS (ON) (m Ω) Case temperature Tc (°C) Drain reverse current I DR (A) Drain-source voltage V DS (V) Drain power dissipation PD (W) Drain-source voltage V DS (V) Dynamic input / output characteristics Gate-source voltage V GS (V) Common source ID = 80 A Tc = 25°C Pulse Test Common source VGS = 10 V Pulse Test 100 150 250 0 80 40 200 160 200 120 40A 200 200

100 µs * 1 ms 1000 0.1 10 0.01 100 100 VDSS max 0.1 10Ж 100Ж 1m 10m 100m 1 10 0.1 Duty=0.5 0.2 0.1 0.05 0.02 0.01 0.01 EAS – Tch Channel temperature (initial) T ch ( ° C ) Avalanche energy E AS ( m J ) 0 V 15 V IAR BVDSS VDD V DS RG = 25 Ω VDD = 25 V, L = 100 µH ⎟⎟ ⋅⋅⋅= VDDBVDSS BVDSS2IL 1ΕAS Test circuit Waveform rth – tw Pulse width t w (s) Normalized transient thermal impedance rth (t)/Rth (ch-c) SINGLE PULSE ˞ Single pulse Tc=25ˆ Curves must be derated linearly with increase in temperature. ID max (pulse) * ID max (continuous) DC OPEATION Tc = 25°C SAFE OPERATING AREA Drain-source voltage V DS (V) Drain current I D (A) E 25 50 100 125 100 75 150 L = 100uH VDD = 25V IAR = 40A ̢̥̙ U ̙͈̈́̓ 120 140 175 10 µs * 200

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