2SK544 SANYO | Alldatasheet
Document overview
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Technical content
Features
- Low noise: NF=1.8dB typ (f=100MHz) + High power gain: PG=27dB typ (f=100MHz) . Small reverse transfer capacitance: Cpgg=0.035PF (Wp g= 109, f£=1MHz) Absolute Maximum Ratings at Ta=25°C unit Drain to Source Voltage Ys 20 v Gate to Source Voltage Ves +5 v Drain Current Ip 30 «=mAL Allowable Power Dissipation Pp 300 «mW Channel Temperature Teh 125 °C Storage Temperature Tstg -55 to +125 % Electrical Characteristics at Ta=25°C min typ max unit Drain to Source Voltage Vpsx Vgg=-4V; Ip= 10024 20 v Gate Cutoff Current Tgss_ Vp g®0Vs Vgg=*5V 10 nA Drain Current Ipss Vpg=10V, Vag=0V 1.2% 12* mA Gate to Source Ves(orr) Yps=10V,Ip=100#A “2.5 V Cutoff Voltage Forward Transfer Admittance lYes| Vpg* 10V, Vgg=0V, f= 1kHz 11 mS Input Capacitance Cass Vpg210V, Vgg=0V, f= 1kHz 2.4 pF Reverse Transfer Capacitance Coss 0.035 pF Power Gain PG Vpg=10V, Vgg=0V, f= 100MHz 27 dB Noise Figure NF See specified Test Cireut. 1.8 3.0 dB *: The 2SK544 4s classified by Ings as follows (unit:mA): (2D 3.0 [2.5 E 6.0 [5.0 F ie Package Dimensions 2040 (unit: mm ) r 15.0 ar Sao | os fi Leeeesete es | 42. ° ° G: Gate 04 S: Source D: Drain SANYO: SPA SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 6037TA/2075KI,TS No.1792-1/4
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° 4 8 2 cy E-) Py * % 2 4 6 8 10 Rr “ Drain’to Source Voltage, ¥jg'- V Drain to Source Voltage ,Vpg = V eects (rin fo Source Woltagerpg = Vo No.1792~2/4
0 Input Admittance yis - Vps Reverse ‘Transfer Aan} thence ts =e
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» PG,NF - Ip 3 wo Pp - Ta me] SERET TTC Jott Tt ee eet esq | t[ Pl ti dot XK] | tT | a tbe TT TTP | gt TINE kn L | & 200} cee etl TT ITT) att ALT Te Se ub | a 60 get tit Tr ity | ga PP PNT 2 z $ 120] IN fer [IT TT TTT) eg tT PIN; TT ge] tO :° sof pile TT TE? | ay tt TT AT ttt Tt Tir |) per yNn So N rr) 10 8a 0 0 i 100 ro ie Drain Current,Ip - mA . Ambient Temperature,Ta - °c _ PG, NF Test Circuit “ a Rg | = & [HP j-a) -%P | a 0 Ed f fh | VG YO Unit(Capacitance : F) L1: 1,0mmé plated wire 10mmé 6T, tap: 3T from H side L2: 1.0mmé plated wire 10mmé 7T, tap: 4T from H side IENo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power contro! systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. M@ Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. i Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. : a eeeeeeeeesSsSSsSsSsSSsSSSSSSSSmmmmmmmfsseF No. 1792—4/4