K50T60

IKW50N60T INFINEON | Alldatasheet

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Power Semiconductors 1 Rev. 2.1 Dec-04 Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

• Very low V CE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5 µs
• Designed for : - Frequency Converters - Uninterrupted Power Supply
• Trench and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low V CE(sat)
• Positive temperature coefficient in V CE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE I C VCE(sat),Tj=25°C Tj,max Marking Code Package Ordering Code IKW50N60T 600V 50A 1.5V 175°C K50T60 TO-247 Q67040S4718 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 600 V DC collector current, limited by Tjmax TC = 25°C TC = 100°C IC 801) Pulsed collector current, tp limited by Tjmax ICpuls 150 Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) - 150 Diode forward current, limited by Tjmax TC = 25°C TC = 100°C IF 100 Diode pulsed current, tp limited by Tjmax IFpuls 150 A Gate-emitter voltage VGE ±20 V Short circuit withstand time2) VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C tSC 5 µs Power dissipation TC = 25°C Ptot 333 W Operating junction temperature Tj -40...+175 Storage temperature Tstg -55...+175 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 1) Value limited by bond wire 2) Allowed number of short circuits: <1000; time between short circuits: >1s. G C E P-TO-247-3-1 (TO-220AC)

Power Semiconductors 2 Rev. 2.1 Dec-04 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case RthJC TO-247 AC 0.45 Diode thermal resistance, junction – case RthJCD TO-247 AC 0.8 Thermal resistance, junction – ambient RthJA TO-247 AC K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. Typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE =0V, IC =0.2mA 600 - - Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC =50A Tj =25 °C Tj =175 °C 1.5 1.9 Diode forward voltage VF VGE =0V, IF =50A Tj =25 °C Tj =175 °C 1.65 1.6 2.05 Gate-emitter threshold voltage VGE(th) IC =0.8mA, VCE =VGE 4.1 4.9 5.7 V Zero gate voltage collector current ICES VCE =600V , VGE =0V Tj =25 °C Tj =175 °C 1000 µA Gate-emitter leakage current IGES VCE =0V, VGE =20V - - 100 nA Transconductance gfs VCE =20V, IC =50A - 31 - S Integrated gate resistor RGint - Ω Dynamic Characteristic Input capacitance Ciss - 3140 - Output capacitance Coss - 200 - Reverse transfer capacitance Crss VCE =25V, VGE =0V, f=1MHz - 93 - pF Gate charge QGate VCC =480V, IC =50A VGE =15V - 310 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE TO-247-3-1 - 7 - nH Short circuit collector current1) IC(SC) VGE =15V, tSC ≤ 5µ s VCC = 400V, Tj ≤ 150 °C - 458.3 - A 1) Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors 3 Rev. 2.1 Dec-04 Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. Typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 26 - Rise time tr - 29 - Turn-off delay time td(off) - 299 - Fall time tf - 29 - ns Turn-on energy Eon - 1.2 - Turn-off energy Eoff - 1.4 - Total switching energy Ets Tj =25 °C, VCC =400V, IC =50A, VGE =0/15V, RG = 7 Ω , Lσ 1) =103nH, Cσ 1) =39pF Energy losses include “tail” and diode reverse recovery. - 2.6 - mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr - 143 - ns Diode reverse recovery charge Qrr - 1.8 - µC Diode peak reverse recovery current Irrm - 27.7 - A Diode peak rate of fall of reverse recovery current during tb di rr /dt Tj =25 °C, VR =400V, I F =50A, di F /dt =1280A/ µ s - 671 - A/µs Switching Characteristic, Inductive Load, at Tj=175 °C Value Parameter Symbol Conditions min. Typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 27 - Rise time tr - 33 - Turn-off delay time td(off) - 341 - Fall time tf - 55 - ns Turn-on energy Eon - 1.8 - Turn-off energy Eoff - 1.8 - Total switching energy Ets Tj =175 °C, VCC =400V, IC =50A, VGE =0/15V, RG = 7 Ω Lσ 1) =103nH, Cσ 1) =39pF Energy losses include “tail” and diode reverse recovery. - 3.6 - mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr - 205 - ns Diode reverse recovery charge Qrr - 4.3 - µC Diode peak reverse recovery current Irrm - 40.7 - A Diode peak rate of fall of reverse recovery current during tb di rr /dt Tj =175 °C VR =400V, I F =50A, di F /dt =1280A/ µ s - 449 - A/µs 1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.

10 K/W

Figure 21. IGBT transient thermal resistance Figure 22. Diode transient thermal Figure 23. Typical reverse recovery time as Figure 24. Typical reverse recovery charge

Power Semiconductors 11 Rev. 2.1 Dec-04 dimensions symbol [mm] [inch] min max min max A 4.78 5.28 0.1882 0.2079 B 2.29 2.51 0.0902 0.0988 C 1.78 2.29 0.0701 0.0902 D 1.09 1.32 0.0429 0.0520 E 1.73 2.06 0.0681 0.0811 F 2.67 3.18 0.1051 0.1252 G 0.76 max 0.0299 max H 20.80 21.16 0.8189 0.8331 K 15.65 16.15 0.6161 0.6358 L 5.21 5.72 0.2051 0.2252 M 19.81 20.68 0.7799 0.8142 N 3.560 4.930 0.1402 0.1941 ∅ P 3.61 0.1421 Q 6.12 6.22 0.2409 0.2449 TO-247AC

Power Semiconductors 12 Rev. 2.1 Dec-04 Figure A. Definition of switching times Figure B. Definition of switching losses I rrm 90% I rrm 10% I rrm di /dt F t rr I F i,v tQS QF tS tF V R di /dt rr Q= Q Q rr S F t= t trr S F + Figure C. Definition of diodes switching characteristics p(t) 12 n T( t )j n n τ TC rr r r rr Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit

Power Semiconductors 13 Rev. 2.1 Dec-04 Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2004 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.