K4S640832K_07 SAMSUNG | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

A. SDRAM Component Ordering Information 16 : 16Mb, 4K/64ms 64 : 64Mb, 4K/64ms 28 : 128Mb, 4K/64ms 56 : 256Mb, 8K/64ms 51 : 512Mb, 8K/64ms 04 : x 4 06 : x 4 Stack (Flex frame) 07 : x 8 Stack (Flex frame) 08 : x 8 16 : x16 32 : x32 2 : LVTTL (3.3V, 3.3V) 2 : 2 Banks 3 : 4 Banks 3. Product 4. Density & Refresh 5. Organization 6. Bank 7. Interface ( VDD, VDDQ) M A B C D E F H 9. Package Type 8. Revision 11. Speed (Default CL= 3) 1. SAMSUNG Memory : K 2. DRAM : 4 Revision BankOrganization Density & Refresh Product DRAM SAMSUNG Memory Interface (VDD, VDDQ) Package Type Temperature & Power K 4 S X X X X X X X - X X X X 1 2 3 4 5 6 7 8 9 10 11 Speed S : SDRAM : 7.5ns, PC133 (133MHz CL=3) : 6.0ns (166MHz CL=3) : 5.0ns (200MHz CL=3) : 1st Gen. : 2nd Gen. : 3rd Gen. : 4th Gen. : 5th Gen. : 6th Gen. : 7th Gen : 9th Gen 10. Temperature & Power T N L : TSOP II : sTSOP II : TSOP II U V : TSOP II (Lead-free)*1 : sTSOP II (Lead-free)*1 J K N : 11th Gen. : 12th Gen : 14th Gen (Lead-free & Halogen-free) C L I P : Commercial Temp.( 0°C ~ 70°C) & Normal Power : Commercial Temp.( 0°C ~ 70°C) & Low Power : Industrial Temp.( -40°C ~ 85°C) & Normal Power : Industrial Temp.( -40°C ~ 85°C) & Low Power Note 1: All of Lead-free or Halogen-free product are in compliance with RoHS

B. SDRAM Component Product Guide Density Bank Part Number Package*1 & Power*2 & Speed*3 Org. Interface Refresh Power (V) Package Avail. 64Mb K-die 4Banks K4S640832K UC75 UL75 8M x 8 LVTTL 4K/64ms 3.3 ± 0.3V Lead-free 54pin TSOP(II) EOL DEC. ’08 K4S641632K UC50/C60/C75 UL50/L60/L75 4M x 16 64Mb N-die 4Banks K4S640832N LC75 LL75 8M x 8 LVTTL 4K/64ms 3.3 ± 0.3V Lead-free & Halogen- free 54pin TSOP(II) 4Q’07 CS K4S641632N LC50/C60/C75 LL50/L60/L75 4M x 16 128Mb I-die 4Banks K4S280432I UC75 UL75 32M x 4 LVTTL 4K/64ms 3.3 ± 0.3V Lead-free 54pin TSOP(II) EOL AUG. ’08K4S280832I UC75 UL75 16M x 8 K4S281632I UC60/C75 UL60/L75 8M x 16 128Mb K-die 4Banks K4S280432K U*4C75 UL75 32M x 4 LVTTL 4K/64ms 3.3 ± 0.3V Lead-free & Halogen- free 54pin TSOP(II)*4 NowK4S280832K UC75 UL75 16M x 8 K4S281632K UC60/C75 UL60/L75 8M x 16 256Mb H-die 4Banks K4S560432H UC75 UL75 64M x 4 LVTTL 8K/64ms 3.3 ± 0.3V Lead-free 54pin TSOP(II) EOL SEP . ’08K4S560832H UC75 UL75 32M x 8 K4S561632H UC60/C75 UL60/L75 16M x 16 256Mb J-die 4Banks K4S560432J U*4C75 UL75 64M x 4 LVTTL 8K/64ms 3.3 ± 0.3V Lead-free & Halogen- free 54pin TSOP(II)*4 NowK4S560832J UC75 UL75 32M x 8 K4S561632J UC60/C75 UL60/L75 16M x 16 512Mb D-die 4Banks K4S510432D UC75 UL75 128M x 4 LVTTL 8K/64ms 3.3 ± 0.3V Lead-free 54pin TSOP(II) NowK4S510832D UC75 UL75 64M x 8 K4S511632D UC75 UL75 32M x 16 Note 2 : Temperature and Power Description C Temperature, Normal Power L Temperature, Low Power Note 1 : U : TSOP(II) (Lead-free) L : TSOP(II) (Lead-free & Halogen-free) Note 3 : * All products have backward compatibility with PC100. Speed Description 75 7.5ns, PC133 (133Mhz @ CL=3) 60 6.0 ns (166Mhz @ CL=3) 50 5.0 ns (200Mhz @ CL=3) - Commercial Temp (0°C < Ta < 70°C) Note 4 : 128Mb K-die SDR and 256Mb J-die SDR DRAMs support Lead-free & Halogen-free package with Lead-free package code(-U)

C. Industrial Temperature SDRAM Component Product Guide Density Bank Part Number Package*1 & Power*2 & Speed*3 Org. Interface Refresh Power (V) Package Avail. 64Mb K-die 4Banks KS641632K UI60/I75 UP60/P75 4M x 16 LVTTL 4K/64ms 3.3 ± 0.3V Lead-free 54pin TSOP(II) EOL DEC.’08 64Mb N-die 4Banks KS641632N LI60/I75 LP60/P75 4M x 16 LVTTL 4K/64ms 3.3 ± 0.3V Lead-free & Halogen-free 54pin TSOP(II) 1Q’08 128Mb I-die 4Banks K4S281632I UI60/I75 UP60/P75 8M x 16 LVTTL 4K/64ms 3.3 ± 0.3V Lead-free 54pin TSOP(II) EOL AUG.’08 128Mb K-die 4Banks K4S281632K U*4I60/I75 UP60/P75 8M x 16 LVTTL 4K/64ms 3.3 ± 0.3V Lead-free & Halogen-free 54pin TSOP(II)*4 Now 256Mb H-die 4Banks K4S561632H UI60/I75 UP60/P75 16M x 16 LVTTL 8K/64ms 3.3 ± 0.3V Lead-free 54pin TSOP(II) EOL SEP.’08 256Mb J-die 4Banks K4S561632J U*4I60/I75 UP60/P75 16M x 16 LVTTL 8K/64ms 3.3 ± 0.3V Lead-free & Halogen-free 54pin TSOP(II)*4 Now Note 2 : - Industrial Temp (-40°C < Ta < 85°C) Temperature and Power Description I Industrial Temperature, Normal Power P Industrial Temperature, Low Power Note 1 : U : TSOP(II) (Lead-free) L : TSOP(II) (Lead-free & Halogen-free) Note 3 : Speed Description 75 7.5ns, PC133 (133Mhz @ CL=3) 60 6.0 ns (166Mhz @ CL=3) 50 5.0 ns (200Mhz @ CL=3) Note 4 : 128Mb K-die SDR and 256Mb J-die SDR DRAMs support Lead-free & Halogen-free package with Lead-free package code(-U)

3 : DIMM 4 : SODIMM 63 : x63 PC100 / PC133 µSODIMM with SPD for 144pin 64 : x64 PC100 / PC133 SODIMM with SPD for 144pin (Intel/JEDEC) 66 : x64 Unbuffered DIMM with SPD for 144pin/168pin (Intel/JEDEC) 74 : x72 /ECC Unbuffered DIMM with SPD for 168pin (Intel/JEDEC) 77 : x72 /ECC PLL + Register DIMM with SPD for 168pin (Intel PC100) 90 : x72 /ECC PLL + Register DIMM with SPD for 168pin (JEDEC PC133) Commercial Normal Commercial Low T TSOP(II) (400mil) N sTSOP(II) (400mil) U TSOP(II) Lead-free (400mil) V sTSOP(II) Lead-free (400mil) 16 : 16M 32 : 32M 64 : 64M 28 : 128M 56 : 256M M 1st Gen. A 2nd Gen. B 3rd Gen. C 4th Gen. D 5th Gen. E 6th Gen. F 7th Gen. H 9h Gen. J 11h Gen.

0 Mother PCB

Rev. U Low Profile DIMM S : SDRAM 1. Memory Module : M 2. DIMM Configuration 3. Data Bits 4. Feature 5. Depth 12. Speed (Default CL= 3 ) 11. Power 10. PCB Revision & Type 9. Package 8. Component Revision Composition Component PCB revision & Type Component Revision Refresh, # of Banks in Comp. & Interface Depth Feature Data bits DIMM Configuration Memory Module Package Power Speed 0 : x 4 3 : x 8 4 : x16 8 : x 4 Stack (Flexframe) 9 : x 8 Stack (Flexframe) M X X X S X X X X X X X - X X X 7. Composition Component 1 2 3 4 5 6 7 8 9 10 11 12 2 : 4K/ 64ms Ref., 4Banks & LVTTL 5 : 8K/ 64ms Ref., 4Banks & LVTTL 6. Refresh, # of Banks in comp. & Interface D. SDRAM Module Ordering Information C L 1 : 1st Rev. 3 : 3rd Rev. S : 4Layer PCB. ( 0°C ~ 70°C) ( 0°C ~ 70°C) 7A : PC133 (133MHz CL=3/PC100 CL2) 09 : 8M (for 128Mb/512Mb) 17 : 16M (for 128Mb/512Mb) 33 : 32M (for 128Mb/512Mb) 65 : 64M (for 128Mb/512Mb) 29 : 128M (for 128Mb/512Mb) 59 : 256M (for 128Mb/512Mb)

E. SDRAM Module Product Guide Org. Density Part No. Speed Composition Comp. Version Power (V) Internal Banks External Banks Feature Avail. 168pin PC133 Registered DIMM 32Mx72 256MB M390S3253HU1 C7A 32M x 8 * 9 pcs 256Mb H-die

3.3 V 4

1 DS, 1500mil

JUN.’0864Mx72 512MB M390S6450HU1 C7A 64M x 4 * 18 pcs 256Mb H-die 1 DS, 1700mil M390S6450HUU C7A 64M x 4 * 18 pcs 256Mb H-die 1 DS, 1200mil 168pin PC133 Unbuffered DIMM 8Mx64 64MB M366S0924IUS C7A 8M x 16 * 4 pcs 128Mb I-die 3.3V 4

1 SS, 1000mil EOL

JUN.’08 16Mx64 128MB M366S1723IUS C7A 16M x 8 * 8 pcs 128Mb I-die 1 SS, 1375mil M366S1654HUS C7A 16M x 16 * 4 pcs 256Mb H-die 1 SS, 1000mil EOL JUN.’08 M366S1654JUS C7A 16M x 16 * 4 pcs 256Mb J-die 1 SS, 1000mil Now 16Mx72 M374S1723IUS C7A 16M x 8 * 9 pcs 128Mb I-die 1 SS, 1375mil EOL JUN.’0832Mx64 256MB M366S3323IUS C7A 16M x 8 * 16 pcs 128Mb I-die 2 DS, 1375mil 32Mx72 M374S3323IUS C7A 16M x 8 * 18 pcs 128Mb I-die 2 DS, 1375mil 32Mx64 M366S3253JUS C7A 32M x 8 * 8 pcs 256Mb J-die 1 SS, 1375mil Now 64Mx64 512MB M366S6453HUS C7A 32M x 8 * 16 pcs 256Mb H-die 2 DS, 1375mil EOL JUN.’08 M366S6453JUS C7A 32M x 8 * 16 pcs 256Mb J-die 2 DS, 1375mil Now 144pin PC133 SODIMM 16Mx64 128MB M464S1724IUS L7A 8M x 16 * 8 pcs 128Mb I-die 3.3V 4

1 DS, 1250mil EOL

JUN.’08 M464S1724KUS L7A 8M x 16 * 8 pcs 128Mb K-die 1 DS, 1250mil Now 32Mx64 256MB M464S3254HUS L7A 16M x 16 * 8 pcs 256Mb H-die 1 DS, 1250mil EOL JUN.’08 M464S3254JUS L7A 16M x 16 * 8 pcs 256Mb J-die 1 DS, 1250mil Now 64Mx64 512MB M464S6453HV0 L7A 32M x 8 * 16 pcs 256Mb H-die 2 DS, 1250mil EOL JUN.’08 M464S6453JV0 L7A 32M x 8 * 16 pcs 256Mb J-die 2 DS, 1250mil Now

F. Package Dimension 54Pin TSOP(II) Package Dimension (1.50) (1.50) #54 #28 #27 10.16 ± 0.10 (R 0.15) 22.22 ± 0.10 0.210 ± 0.05 0.665 ± 0.05 (R 0.15) 0.80TYP 0.35 +0.10 - 0.05 (10°) 1.00 ± 0.10

0.05 MIN

(10°)

1.20 MAX

0.10 MAX

0.075 MAX[ [

(10.76) 0.125 +0.075 - 0.035 (10°) (10°) 11.76 ± 0.20 (0.80)(0.80) (0.50) (4°) 0.45 ~ 0.75 (0° ∼ 8°) 0.25TYP(R 0.25) (R 0.25) (0.50) Unit : mm NOTE 1. ( ) IS REFERENCE 2. [ ] IS ASS’Y OUT QUALITY

For further information, semiconductor@samsung.com