K4N51163QG SAMSUNG | Alldatasheet

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  • 1 - Apr. 2010 SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference pur poses only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein re main the sole and exclusive property of Samsung Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property right is granted by one party to the other party under this document, by implication, estoppel or other- wise. Samsung products are not intended for use in life sup port, critical care, medical, safety equipment, or similar applications where product failure could result in loss of li fe or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. For updates or additional information about Samsung products, contact your nearest Samsung office. All brand names, trademarks and registered trademarks belong to their respective owners. ⓒ 2010 Samsung Electronics Co., Ltd. All rights reserved. Product Guide Graphic Memory
  • 2 - Product Guide Graphic Memory Apr. 2010 1. GRAPHIC MEMORY ORDERING INFORMATION 3. Product 4~5. Density & Refresh 6~7. Organization 8. Bank 9. Interface ( VDD, VDDQ) 11. Package Type 10. Revision 12. Temperature & Power(VDD) 1. SAMSUNG Memory 2. DRAM Revision Bank Organization Density & Refresh Product DRAM SAMSUNG Memory Interface (VDD, VDDQ) Package Type Temperature & Power K 4 X X X X X X X X - X X X X 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Speed Q : SSTL_2 (1.8V, 1.8V) 5 : SSTL_2 (1.8V,1.8V,LP) 6 : SSTL_15 (1.5V,1.5V) F : POD_15 (1.5V,1.5V) K : POD_18 (1.8V,1.8V) N : gDDR2 SDRAM W : gDDR3 SDRAM J : GDDR3 SGRAM G : GDDR5 SGRAM 51 : 512M, 8K/64ms 52 : 512M, 8K/32ms 10 : 1G, 8K/32ms 1G : 1G, 8K/64ms 2G : 2G, 8K/64ms 4G : 4G, 8K/64ms 16 : x16 32 : x32 3 : 4Banks 4 : 8Banks M : 1st Gen. B : 3rd Gen. D : 5th Gen. F : 7th Gen. H : 9th Gen. Q : 17th Gen. gDDR2 H : 84FBGA(Halogen Free & Lead Free) B : 84FBGA(Halogen Free & Lead Free & Flip Chip) gDDR3 E : 100FBGA(Halogen Free & Lead Free) H : 96FBGA(Halogen Free & Lead Free) GDDR3 B : 136FBGA(Lead Free) H : 136FBGA(Halogen Free & Lead Free) GDDR5 H : 170FBGA(Halogen Free & Lead Free) A : 2nd Gen. C : 4th Gen. E : 6th Gen. G : 8th Gen. I : 10th Gen. Z : 26th Gen. C : Commercial Normal J : Commercial High L : Commercial Low 13~14. Speed NOTE : 1)Graphic high speed binning was unified to EDP binning(2000Mbps→2133Mbps) 2)Graphic high speed binning was unified to EDP binning(1800Mbps→1866Mbps) 1A1) : 0.935ns (2.1Gbps) 28 : 0.28ns (7.0Gbps) 112) : 1.07ns (1.8Gbps) 03 : 0.33ns (6.0Gbps) 12 : 1.25ns (1.6Gbps) 04 : 0.40ns (5.0Gbps) 14 : 1.4ns (1.4Gbps) 05 : 0.50ns (4.0Gbps) 15 : 1.5ns (1.3Gbps) 5C : 0.56ns (3.6Gbps) 16 : 1.6ns (1.2Gbps) 06 : 0.62ns (3.2Gbps) 18 : 1.8ns (1.1Gbps) 6A : 0.66ns (3.0Gbps) 19 : 1.875ns (1.06Gbps) 07 : 0.71ns (2.8Gbps) 20 : 2.0ns (1.0Gbps) 7A : 0.77ns (2.6Gbps) 22 : 2.2ns (0.9Gbps) 08 : 0.8ns (2.4Gbps) 25 : 2.5ns (0.8Gbps) 09 : 0.9ns (2.2Gbps)
  • 3 - Product Guide Graphic Memory Apr. 2010 2. GRAPHIC MEMORY COMPONENT PRODUCT GUIDES gDDR2 SDRAM 512Mb G-die 4Banks K4N51163QG HC20/25 32Mx16 SSTL_18 8K/64ms 1.8V ± 0.1V 84ball FBGA Halogen-Free & Lead-Free Mass Production512Mb Z-die K4N51163QZ HC20/25 1Gb E-die 8Banks K4N1G164QE HC20/25 64Mx16 1Gb F-die K4N1G164QF BC20/25 Halogen-Free, Lead-Free & Flip-Chip CS May. ’10 gDDR3 SDRAM 1Gb E-die 8Banks K4W1G1646E HC1A/11 12/15 64Mx16 SSTL_15 8K/64ms 1.5V ± 0.075V 96ball FBGA Halogen-Free & Lead-Free Mass Production 2Gb B-die K4W2G1646B HC12/15 128Mx16 2Gb C-die K4W2G1646C HC1A/11 12/15 128Mx16 CS May. ’10 GDDR3 SGRAM 512Mb I-die 8Banks K4J52324KI HC7A/08 1A/12/14 16Mx32 Pseudo Open_ Drain 8K/32ms 1.8V ± 0.1V 136ball FBGA Halogen-Free & Lead-Free Mass Production 1Gb E-die K4J10324KE HC7A/08 1A/12/14 32Mx32 1.8V ± 0.1V Mass Production GDDR5 SGRAM 1Gb E-die 8Banks K4G10325FE HC04/05 5C 32Mx32 POD_15 8K/32ms 1.5V ± 0.045V 170ball FBGA Halogen-Free & Lead-Free Mass Production 2Gb C-die 16Banks K4G20325FC TBD 64Mx32 POD_15 16K/32ms 1.5V ± 0.045V 170ball FBGA Halogen-Free & Lead-Free CS May. ’10