K4A8G165WB-BCRC

K4A8G165WB SAMSUNG | Alldatasheet

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• 1 - K4A8G165WB Rev. 1.6, Jun. 2016 SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property of Samsung Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property right is granted by one party to the other party under this document, by implication, estoppel or other- wise. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. For updates or additional information about Samsung products, contact your nearest Samsung office. All brand names, trademarks and registered trademarks belong to their respective owners. (C) 2016 Samsung Electronics Co., Ltd.GG All rights reserved. 8Gb B-die DDR4 SDRAM x16 96FBGA with Lead-Free & Halogen-Free (RoHS compliant) datasheet 1.2V

• 2 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB

Revision History

Revision No. History Draft Date Remark Editor 1.0 - First SPEC Release Mar. 2015 - J.Y.Lee 1.01 - Correction of typo Apr. 2015 - J.Y.Lee 1.02 - IDD current table Typo 11th Aug. 2015 - J.Y.Lee 1.1 - Addition of values on page 10 [Table 5] 27th Oct. 2015 - J.Y.Lee 1.2 - Addition of information about I-temp 3th Dec. 2015 - J.Y.Lee 1.3 - Change of pinout typo 16th Dec. 2015 - J.Y.Lee 1.4 - Addition of DDR4-2666 23th Mar. 2016 - J.Y.Lee 1.5 - Correction of typo 27th May. 2016 - J.Y.Lee 1.6 - Addition of DDR4-2666 (K4A8G165WB-BITD) 28th Jun. 2016 - J.Y.Lee

• 3 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB Table Of Contents 8Gb B-die DDR4 SDRAM x16

• 4 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB

• 4 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB 1. Ordering Information [ Table 1 ] Samsung 8Gb DDR4 B-die ordering information table NOTE : 1. Speed bin is in order of CL-tRCD-tRP. 2. Backward compatible to lower frequency 3. 13th digit stands for below. "C" : Commercial temp/Normal power "I" : Industrial temp/Normal power 2. Key Features [ Table 2 ] 8Gb DDR4 B-die Speed bins Organization DDR4-2133 (15-15-15) DDR4-2400 (17-17-17)2 DDR4-2666 (19-19-19)2 Package 512Mx16 K4A8G165WB-BCPB K4A8G165WB-BCRC K4A8G165WB-BCTD 96FBGA 512Mx16 K4A8G165WB-BIPB K4A8G165WB-BIRC K4A8G165WB-BITD 96FBGA Speed DDR4-1600 DDR4-1866 DDR4-2133 DDR4-2400 DDR4-2666 Unit 11-11-11 13-13-13 15-15-15 17-17-17 19-19-19 CAS Latency 11 13 15 17 19 nCK tRAS(min) 35 34 33 32 32 ns
• JEDEC standard 1.2V (1.14V~1.26V)
• V DDQ = 1.2V (1.14V~1.26V)
• 800 MHz f CK for 1600Mb/sec/pin, 933 MHz fCK for 1866Mb/sec/pin, 1067MHz fCK for 2133Mb/sec/pin, 1200MHz fCK for 2400Mb/sec/pin, 1333MHz fCK for 2666Mb/sec/pin
• 8 Banks (2 Bank Groups)
• Programmable CAS Latency(posted CAS):
• Programmable CAS Write Latency (CWL) = 9,11 (DDR4-1600) , 10,12 (DDR4-1866) ,11,14 (DDR4-2133) ,12,16 (DDR4-2400) and 14,18 (DDR4- 2666)
• 8-bit pre-fetch
• Burst Length: 8, 4 with tCCD = 4 which does not allow seamless read or write [either On the fly using A12 or MRS]
• Bi-directional Differential Data-Strobe
• Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than T CASE 85C, 3.9us at 85C < TCASE < 95 C
• Support Industrial Temp ( -40 95C ) - tREFI 7.8us at -40 °C ≤ TCASE ≤ 85°C - tREFI 3.9us at 85 °C < TCASE ≤ 95°C
• Asynchronous Reset
• Package : 96 balls FBGA - x16
• All of Lead-Free products are compliant for RoHS
• All of products are Halogen-free
• CRC(Cyclic Redundancy Check) for Read/Write data security
• Command address parity check
• DBI(Data Bus Inversion)
• Gear down mode
• POD (Pseudo Open Drain) interface for data input/output
• Internal VREF for data inputs
• External VPP for DRAM Activating Power
• PPR and sPPR is supported The 8Gb DDR4 SDRAM B-die is organized as a 64Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2666Mb/sec/pin (DDR4-2666) for general applica- tions. The chip is designed to comply with the following key DDR4 SDRAM fea- tures such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset . All of the control and address inputs are synchronized with a pair of exter- nally supplied differential clocks. Inputs are latched at the crosspoint of dif- ferential clocks (CK rising and CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fash- ion. The address bus is used to convey row, column, and bank address information in a RAS/CAS multiplexing style. The DDR4 device operates and 2.5V (2.375V~2.75V) VPP. The 8Gb DDR4 B-die device is available in 96ball FBGAs(x16). NOTE : 1. This data sheet is an abstract of full DDR4 specification and does not cover the common features which are described in “DDR4 SDRAM Device Operation & Timing Diagram”. 2. The functionality described and the timing specifications included in this data sheet are for the DLL Enabled mode of operation.

• 5 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB 3. Package pinout/Mechanical Dimension & Addressing 3.1 x16 Package Pinout (Top view) : 96ball FBGA Package 1 2 3 4 5 6 7 8 9 A VDDQ VSSQ DQU0 DQSU_c VSSQ VDDQ A B VPP VSS VDD DQSU_t DQU1 VDD B C VDDQ DQU4 DQU2 DQU3 DQU5 VSSQ C D VDD VSSQ DQU6 DQU7 VSSQ VDDQ D E VSS DMU_n/ DBIU_n VSSQ DML_n DBIL_n VSSQ VSS E F VSSQ VDDQ DQSL_c DQL1 VDDQ ZQ F G VDDQ DQL0 DQSL_t VDD VSS VDDQ G H VSSQ DQL4 DQL2 DQL3 DQL5 VSSQ H J VDD VDDQ DQL6 DQL7 VDDQ VDD J K VSS CKE ODT CK_t CK_c VSS K L VDD WE_n/ A14 ACT_n CS_n RAS_n VDD L M VREFCA BG0 A10/AP A12/BC_n CAS_n/ A15 VSS M N VSS BA0 A4 A3 BA1 TEN N P RESET_n A6 A0 A1 A5 ALERT_n P R VDD A8 A2 A9 A7 VPP R T VSS A11 PAR NC A13 VDD T Populated ball Ball not populated Ball Locations (x16) Top view (See the balls through the package) 1234 89 567 A B C D E F G H J K L N M P R T

• 6 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB

3.2 FBGA Package Dimension (x16)

A B C D E F G H M N 0.80 x15 = 12.00 3.200.80 (Datum B) (Datum A) 0.10MAX 1.10 0.10 #A1 1.60 7.50 0.10 13.30 0.10 MOLDING AREA 0.37 0.05 #A1 INDEX MARK B BOTTOM VIEW TOP VIEW 13.30 0.10 J K L 0.80 0.40 (Post reflow 0.50 ± 0.05) (0.30) (0.60) Units : Millimeters 876543219 x 8 = 6.40 A 0.80 7.50  0.10 R T P

0.2 ABM

96 - 0.48 Solder ball

• 7 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB 4. Input/Output Functional Description [ Table 3 ] Input/Output function description Symbol Type Function CK_t, CK_c Input Clock: CK_t and CK_c are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK_t and negative edge of CK_c. CKE, (CKE1) Input Clock Enable: CKE HIGH activates, and CKE Low deactivates, internal clock signals and device input buffers and output drivers. Taking CKE Low provides Precharge Power-Down and Self-Refresh operation (all banks idle), or Active Power-Down (row Active in any bank). CKE is synchronous for Self-Refresh exit. After VREFCA and Internal DQ Vref have become stable during the power on and initialization sequence, they must be maintained during all operations (including Self-Refresh). CKE must be maintained high throughout read and write accesses. Input buffers, excluding CK_t,CK_cSGODT and CKE are disabled during power-down. Input buffers, excluding CKE, are disabled during Self-Refresh. CS_n, (CS1_n) Input Chip Select: All commands are masked when CS_n is registered HIGH. CS_n provides for external Rank selection on systems with multiple Ranks. CS_n is considered part of the command code. C0,C1,C2 Input Chip ID : Chip ID is only used for 3DS for 2,4,8high stack via TSV to select each slice of stacked component. Chip ID is considered part of the command code ODT, (ODT1) Input On Die Termination: ODT (registered HIGH) enables RTT_NOM termination resistance internal to the DDR4 SDRAM. When enabled, ODT is only applied to each DQ, DQS_t, DQS_c and DM_n/DBI_n/ TDQS_t, NU/TDQS_c (When TDQS is enabled via Mode Register A11=1 in MR1) signal for x8 conurations. For x16 conuration ODT is applied to each DQ, DQSU_t, DQSU_c, DQSL_t, DQSL_c, DMU_n, and DML_n signal. The ODT pin will be ignored if MR1 is programmed to disable RTT_NOM. ACT_n Input Activation Command Input : ACT_n defines the Activation command being entered along with CS_n. The input into RAS_n/A16, CAS_n/A15 and WE_n/A14 will be considered as Row Address A16, A15 and A14 RAS_n/A16. CAS_n/ A15. WE_n/A14 Input Command Inputs: RAS_n/A16, CAS_n/A15 and WE_n/A14 (along with CS_n) define the command being entered. Those pins have multi function. ForG example, for activation with ACT_n Low, those are Addressing like A16,A15 and A14 but for non-activation command with ACT_n High, those are Command pins for Read, Write and other command defined in command truth table DM_n/DBI_n/TDQS_t, (DMU_n/DBIU_n), (DML_n/DBIL_n) Input/Output Input Data Mask and Data Bus Inversion: DM_n is an input mask signal for write data. Input data is masked when DM_n is sampled LOW coincident with that input data during a Write access. DM_n is sampled on both edges of DQS. DM is muxed with DBI function by Mode Register A10,A11,A12 setting in MR5. For x8 device, the function of DM or TDQS is enabled by Mode Register A11 setting in MR1. DBI_n is an input/output identifing whether to store/output the true or inverted data. If DBI_n is LOW, the data will be stored/output after inversion inside the DDR4 SDRAM and not inverted if DBI_n is HIGH. TDQS is only supported in X8 BG0 - BG1 Input Bank Group Inputs : BG0 - BG1 define to which bank group an Active, Read, Write or Precharge command is being applied. BG0 also determines which mode register is to be accessed during a MRS cycle. X4/8 have BG0 and BG1 but X16 has only BG0 BA0 - BA1 Input Bank Address Inputs: BA0 - BA1 define to which bank an Active, Read, Write or Precharge command is being applied. Bank address also determines which mode register is to be accessed during a MRS cycle. A0 - A17 Input Address Inputs: Provide the row address for ACTIVATE Commands and the column address for Read/ Write commands to select one location out of the memory array in the respective bank. (A10/AP, A12/ BC_n, RAS_n/A16, CAS_n/A15 and WE_n/A14 have additional functions, see other rows.The address inputs also provide the op-code during Mode Register Set commands.A17 is only defined for the x4 conuration. A10 / AP Input Auto-precharge: A10 is sampled during Read/Write commands to determine whether Autoprecharge should be performed to the accessed bank after the Read/Write operation. (HIGH: Autoprecharge; LOW: no Autoprecharge).A10 is sampled during a Precharge command to determine whether the Precharge applies to one bank (A10 LOW) or all banks (A10 HIGH). If only one bank is to be precharged, the bank is selected by bank addresses. A12 / BC_n Input Burst Chop: A12 / BC_n is sampled during Read and Write commands to determine if burst chop (on-the- fly) will be performed. (HIGH, no burst chop; LOW: burst chopped). See command truth table for details. RESET_n Input Active Low Asynchronous Reset: Reset is active when RESET_n is LOW, and inactive when RESET_n is HIGH. RESET_n must be HIGH during normal operation. RESET_n is a CMOS rail to rail signal with DC high and low at 80% and 20% of V DD, DQ Input / Output Data Input/ Output: Bi-directional data bus. If CRC is enabled via Mode register then CRC code is added at the end of Data Burst. Any DQ from DQ0~DQ3 may indicate the internal Vref level during test via Mode Register Setting MR4 A4=High. During this mode, RTT value should be set to Hi-Z. Refer to vendor specific datasheets to determine which DQ is used. DQS_t, DQS_c, DQSU_t, DQSU_c, DQSL_t, DQSL_c Input / Output Data Strobe: output with read data, input with write data. Edge-aligned with read data, centered in write data. For the x16, DQSL corresponds to the data on DQL0-DQL7; DQSU corresponds to the data on DQU0-DQU7. The data strobe DQS_t, DQSL_t and DQSU_t are paired with differential signals DQS_c, DQSL_c, and DQSU_c, respectively, to provide differential pair signaling to the system during reads and writes. DDR4 SDRAM supports differential data strobe only and does not support single-ended.

• 8 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB TDQS_t, TDQS_c Output Termination Data Strobe: TDQS_t/TDQS_c is applicable for x8 DRAMs only. When enabled via Mode Register A11 = 1 in MR1, the DRAM will enable the same termination resistance function on TDQS_t/ TDQS_c that is applied to DQS_t/DQS_c. When disabled via mode register A11 = 0 in MR1, DM/DBI/ TDQS will provide the data mask function or Data Bus Inversion depending on MR5; A11,12,10and TDQS_c is not used. x4/x16 DRAMs must disable the TDQS function via mode register A11 = 0 in MR1. PAR Input Command and Address Parity Input : DDR4 Supports Even Parity check in DRAM with MR setting. Once it’s enabled via Register in MR5, then DRAM calculates Parity with ACT_n,RAS_n/A16,CAS_n/A15,WE_n/ A14,BG0-BG1,BA0-BA1,A17-A0, and C0-C2 (3DS devices). Input parity should maintain at the rising edge of the clock and at the same time with command & address with CS_n LOW ALERT_n Input/Output Alert : It has multi functions such as CRC error flag , Command and Address Parity error flag as Output signal. If there is error in CRC, then Alert_n goes LOW for the period time interval and goes back HIGH. If there is error in Command Address Parity Check, then Alert_n goes LOW for relatively long period until on going DRAM internal recovery transaction to complete. During Connectivity Test mode, this pin works as input. Using this signal or not is dependent on system. In case of not connected as Signal, ALERT_n Pin must be bounded to VDD on board. TEN Input Connectivity Test Mode Enable : Required on X16 devices and optional input on x4/x8 with densities equal to or greater than 8Gb.HIGH in this pin will enable Connectivity Test Mode operation along with other pins. It is a CMOS rail to rail signal with AC high and low at 80% and 20% of VDD. Using this signal or not is dependent on System. This pin may be DRAM internally pulled low through a weak pull-down resistor to VSS. NC No Connect: No internal electrical connection is present. VDDQ Supply DQ Power Supply: 1.2 V +/- 0.06 V VSSQ Supply DQ Ground VDD Supply Power Supply: 1.2 V +/- 0.06 V VSS Supply Ground VPP Supply DRAM Activating Power Supply: 2.5V ( 2.375V min , 2.75V max) VREFCA Supply Reference voltage for CA ZQ Supply Reference Pin for ZQ calibration NOTE Input only pins (BG0-BG1,BA0-BA1, A0-A17, ACT_n, RAS_n/A16, CAS_n/A15, WE_n/A14, CS_n, CKE, ODT, and RESET_n) do not supply termination. Symbol Type Function

• 9 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB 5. DDR4 SDRAM Addressing

2 Gb Addressing Table

4 Gb Addressing Table

8 Gb Addressing Table

16 Gb Addressing Table

NOTE 1 : Page size is the number of bytes of data delivered from the array to the internal sense amplifiers when an ACTIVE command is registered. Page size is per bank, calculated as follows: page size = 2 COLBITS * ORG8 where, COLBITS = the number of column address bits, ORG = the number of I/O (DQ) bits Configuration 512 Mb x4 256 Mb x8 128 Mb x16 Bank Address # of Bank Groups 4 4 2 BG Address BG0~BG1 BG0~BG1 BG0 Bank Address in a BG BA0~BA1 BA0~BA1 BA0~BA1 Row Address A0~A14 A0~A13 A0~A13 Column Address A0~A9 A0~A9 A0~A9 Page size 512B 1KB 2KB Configuration 1 Gb x4 512 Mb x8 256 Mb x16 Bank Address # of Bank Groups 4 4 2 BG Address BG0~BG1 BG0~BG1 BG0 Bank Address in a BG BA0~BA1 BA0~BA1 BA0~BA1 Row Address A0~A15 A0~A14 A0~A14 Column Address A0~A9 A0~A9 A0~A9 Page size 512B 1KB 2KB Configuration 2 Gb x4 1 Gb x8 512 Mb x16 Bank Address # of Bank Groups 4 4 2 BG Address BG0~BG1 BG0~BG1 BG0 Bank Address in a BG BA0~BA1 BA0~BA1 BA0~BA1 Row Address A0~A16 A0~A15 A0~A15 Column Address A0~A9 A0~A9 A0~A9 Page size 512B 1KB 2KB Configuration 4 Gb x4 2 Gb x8 1 Gb x16 Bank Address # of Bank Groups 4 4 2 BG Address BG0~BG1 BG0~BG1 BG0 Bank Address in a BG BA0~BA1 BA0~BA1 BA0~BA1 Row Address A0~A17 A0~A16 A0~A16 Column Address A0~A9 A0~A9 A0~A9 Page size 512B 1KB 2KB

• 10 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB 6. Absolute Maximum Ratings

6.1 Absolute Maximum DC Ratings

[ Table 4 ] Absolute Maximum DC Ratings NOTE : 1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability 2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2 standard. 3. VDD and VDDQ must be within 300 mV of each other at all times;and VREFCA must be not greater than 0.6 x VDDQ, When VDD and VDDQ are less than 500 mV; VREFCA may be equal to or less than 300 mV 4. VPP must be equal or greater than VDD/VDDQ at all times.

6.2 DRAM Component Operating Temperature Range

[ Table 5 ] Temperature Range NOTE : 1. Operating Temperature TOPER is the case surface temperature on the center/top side of the DRAM. 2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. During operation, the DRAM case temperature must be main- tained between 0-85C under all operating conditions 3. The Industrial Temperature Range specifies the temperatures where all DRAM specifications will be supported. During operation, the DRAM case temperature must be main- tained between -40-95C under all operating conditions 4. Some applications require operation of the Extended Temperature Range between 85C and 95C case temperature. Full specifications are guaranteed in this range, but the following additional conditions apply: a) Refresh commands must be doubled in frequency, therefore reducing the refresh interval tREFI to 3.9us. b) If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to use the Manual Self-Refresh mode with Extended Temperature Range capability (MR2 A6 = 0b and MR2 A7 = 1b). 7. AC & DC Operating Conditions [ Table 6 ] Recommended DC Operating Conditions NOTE : 1. Under all conditions VDDQ must be less than or equal to VDD. 2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together. 3. DC bandwidth is limited to 20MHz. Symbol Parameter Rating Units NOTE VDD Voltage on VDD pin relative to Vss -0.3 ~ 1.5 V 1,3 VDDQ Voltage on VDDQ pin relative to Vss -0.3 ~ 1.5 V 1,3 VPP Voltage on VPP pin relative to Vss -0.3 ~ 3.0 V 4 VIN, VOUT Voltage on any pin except VREFCA relative to Vss -0.3 ~ 1.5 V 1,3,5 TSTG Storage Temperature -55 to +100 °C 1,2 Symbol Parameter rating Unit NOTE TOPER Operating Temperature Range Normal 0 to 95 C 1, 2, 4 Industrial -40 to 95 C 1, 3, 4 Symbol Parameter Rating Unit NOTE Min. Typ. Max. VDD Supply Voltage 1.14 1.2 1.26 V 1,2,3 VDDQ Supply Voltage for Output 1.14 1.2 1.26 V 1,2,3 VPP Peak-to-Peak Voltage 2.375 2.5 2.75 V 3

1. AC & DC Input Measurement Levels

8.1 AC & DC Logic input levels for single-ended signals

1. See “Overshoot and Undershoot Specifications” .
2. For reference : approx. VDD/2 ± 12mV

8.2 VREF Tolerances

tion of time. (VREF stands for VREFCA and VREFDQ likewise). page 11. Furthermore V REF(t) may temporarily deviate from VREF(DC) by no more than ± 1% VDD. Figure 1. Illustration of VREF(DC) tolerance and VREF ac-noise limits The voltage levels for setup and hold time measurements VIH(AC), VIH(DC), VIL(AC) and VIL(DC) are dependent on VREF. "VREF" shall be understood as VREF(DC), as defined in Figure 1 . data-eye of the input signals. and voltage effects due to ac-noise on VREF up to the specified limit (+/-1% of VDD) are included in DRAM timings and their associated deratings.

8.3 AC & DC Logic Input Levels for Differential Signals

8.3.1 Differential signals definition

Figure 2. Definition of differential ac-swing and "time above ac level" tDVAC

8.3.2 Differential swing requirement for clock (CK_t - CK_c)

1. Used to define a differential signal slew-rate.
2. These values are not defined; however, the differential signals CK_t - CK_c, need to be within the respective limits (VIHCA(DC) max, VILCA(DC)min) for single-ended signals

as well as the limitations for overshoot and undershoot.

8.3.3 Single-ended requirements for differential signals

Each individual component of a differential signal (CK_t, CK_c) has also to comply with certain requirements for single-ended signals. ADD/CMD signals, then these ac-levels apply also for the single-ended signals CK_t and CK _c . Figure 3. Single-ended requirement for differential signals characteristics of these signals.

1. For CK_t - CK_c use VIH.CA/VIL.CA(AC) of ADD/CMD;
2. VIH(AC)/VIL(AC) for ADD/CMD is based on VREFCA;
3. These values are not defined, however the single-ended signals CK_t - CK_c need to be within the respective limits (VIH.CA(DC) max, VIL.CA(DC)min) for single-ended sig-

nals as well as the limitations for overshoot and undershoot.

8.3.4 Address, Command and Control Overshoot and Undershoot specifications

Figure 4. Address, Command and Control Overshoot and Undershoot Definition

8.3.5 Clock Overshoot and Undershoot Specifications

Figure 5. Clock Overshoot and Undershoot Definition

8.3.6 Data, Strobe and Mask Overshoot and Undershoot Specifications

Figure 6. Data, Strobe and Mask Overshoot and Undershoot Definition

• 17 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB

8.4 Slew Rate Definitions

8.4.1 Slew Rate Definitions for Differential Input Signals (CK)

Input slew rate for differential signals (CK_t, CK_c) are defined and measured as shown in Table 14 and Figure 7. [ Table 14 ] Differential input slew rate definition NOTE : The differential signal (i.e. CK - CK and DQS - DQS) must be linear between these thresholds. Figure 7. Differential Input Slew Rate definition for CK, CK

Description

Differential input slew rate for rising edge(CK_t - CK_c) V ILdiffmax V IHdiffmin V IHdiffmin - V ILdiffmax DeltaTRdiff Differential input slew rate for falling edge(CK_t - CK_c) V IHdiffmin V ILdiffmax V IHdiffmin - V ILdiffmax DeltaTFdiff Delta TRdiff Delta TFdiff V IHdiffmin V ILdiffmax Differential Input Voltage(i,e, CK_t - CK_c)

8.4.2 Slew Rate Definition for Single-ended Input Signals ( CMD/ ADD )

1. Single-ended input slew rate for rising edge = { VIHCA(AC)Min - VILCA(DC)Max } / Delta TR single
2. Single-ended input slew rate for falling edge = { VIHCA(DC)Min - VILCA(AC)Max } / Delta TF single
3. Single-ended signal rising edge from VILCA(DC)Max to VIHCA(DC)Min must be monotonic slope.
4. Single-ended signal falling edge from VIHCA(DC)Min to VILCA(DC)Max must be monotonic slope.

Figure 8. Single-ended Input Slew Rate definition for CMD and ADD

8.5 Differential Input Cross Point Voltage

complement signals to the midlevel between of VDD and VSS. Figure 9. Vix Definition (CK)

8.6 CMOS rail to rail Input Levels

8.6.1 CMOS rail to rail Input Levels for RESET_n

1.After RESET_n is registered LOW, RESET_n level shall be maintained below VIL(DC)_RESET during tPW_RESET, otherwise, SDRAM may not be reset.

1. Once RESET_n is registered HIGH, RESET_n level must be maintained above VIH(DC)_RESET, otherwise, SDRAM operation will not b e guaranteed until it is reset

asserting RESET_n signal LOW.

1. RESET is destructive to data contents.
2. No slope reversal(ringback) requirement during its level transition from Low to High.
3. This definition is applied only “Reset Procedure at Power Stable”.
4. Overshoot might occur. It should be limited by the Absolute Maximum DC Ratings.
5. Undershoot might occur. It should be limited by Absolute Maximum DC Ratings

Figure 10. RESET_n Input Slew Rate Definition

8.7 AC and DC Logic Input Levels for DQS Signals

8.7.1 Differential signal definition

Figure 11. Definition of differential DQS Signal AC-swing Level

8.7.2 Differential swing requirements for DQS (DQS_t - DQS_c)

1.Used to define a differential signal slew-rate.

8.7.3 Peak voltage calculation method

The peak voltage of Differential DQS signals are calculated in a following equation.

Figure 12. Definition of differential DQS Peak Voltage

8.7.4 Differential Input Cross Point Voltage

Figure 13. Vix Definition (DQS)

1. The base level of Vix_DQS_FR/RF is VrefDQ that is DDR4 SDRAM internal setting value by Vref Training.
2. Vix_DQS_FR is defined by this equation : Vix_DQS_FR = |Min(f(t)) x Vix_DQS_Ratio|
3. Vix_DQS_RF is defined by this equation : Vix_DQS_RF = Max(f(t)) x Vix_DQS_Ratio

8.7.5 Differential Input Slew Rate Definition

Input slew rate for differential signals (DQS_t, DQS_c) are defined and measured as shown in are Figure 11 and Figure 12.

1. Differential signal rising edge from VILDiff_DQS to VIHDiff_DQS must be monotonic slope.
2. Differential signal falling edge from VIHDiff_DQS to VILDiff_DQS must be monotonic slope.

Figure 14. Differential Input Slew Rate Definition for DQS_t, DQS_c

1. AC and DC output Measurement levels

9.1 Output Driver DC Electrical Characteristics

Figure 15. Output driver

• 25 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB [ Table 22 ] Output Driver DC Electrical Characteristics, assuming RZQ=240ohm; entire operating temperature range; after proper ZQ calibration RONNOM Resistor Vout Min Nom Max Unit NOTE 34 RON34Pd VOLdc= 0.5*VDDQ 0.8 1 1.1 RZQ/7 1,2 VOMdc= 0.8* VDDQ 0.9 1 1.1 RZQ/7 1,2 VOHdc= 1.1* VDDQ 0.9 1 1.25 RZQ/7 1,2 RON34Pu VOLdc= 0.5* VDDQ 0.9 1 1.25 RZQ/7 1,2 VOMdc= 0.8* VDDQ 0.9 1 1.1 RZQ/7 1,2 VOHdc= 1.1* VDDQ 0.8 1 1.1 RZQ/7 1,2 48 RON48Pd VOLdc= 0.5*VDDQ 0.8 1 1.1 RZQ/5 1,2 VOMdc= 0.8* VDDQ 0.9 1 1.1 RZQ/5 1,2 VOHdc= 1.1* VDDQ 0.9 1 1.25 RZQ/5 1,2 RON48Pu VOLdc= 0.5* VDDQ 0.9 1 1.25 RZQ/5 1,2 VOMdc= 0.8* VDDQ 0.9 1 1.1 RZQ/5 1,2 VOHdc= 1.1* VDDQ 0.8 1 1.1 RZQ/5 1,2 Mismatch between pull-up and pull-down, MMPuPd VOMdc= 0.8* VDDQ -10 - 10 % 1,2,3,4 Mismatch DQ-DQ within byte vari- ation pull-up, MMPudd VOMdc= 0.8* VDDQ - - 10 % 1,2,4 Mismatch DQ-DQ within byte vari- ation pull-dn, MMPddd VOMdc= 0.8* VDDQ - - 10 % 1,2,4 NOTE : 1. The tolerance limits are specified after calibration with stable voltage and temperature. For the behavior of the tolerance limits if temperature or voltage changes after cal- ibration, see following section on voltage and temperature sensitivity(TBD). 2. Pull-up and pull-dn output driver impedances are recommended to be calibrated at 0.8 * VDDQ. Other calibration schemes may be used to achieve the linearity spec 3. Measurement definition for mismatch between pull-up and pull-down, MMPuPd : Measure RONPu and RONPD both at 0.8*VDD separately; Ronnom is the nominal Ron value 4. RON variance range ratio to RON Nominal value in a given component, including DQS_t and DQS_c. 5. This parameter of x16 device is specified for Uper byte and Lower byte. MMPuPd = RONPu -RONPd RONNOM *100 MMPudd = RONPuMax -RONPuMin RONNOM *100 MMPddd = RONPdMax -RONPdMin RONNOM *100

9.1.1 Alert_n output Drive Characteristic

1. VDDQ voltage is at VDDQ DC. VDDQ DC definition is TBD.

9.1.2 Output Driver Characteristic of Connectivity Test ( CT ) Mode

Following Output driver impedance RON will be applied Test Output Pin during Connectivity Test ( CT ) Mode. Figure 16. Output Driver

• 27 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB NOTE : 1. Connectivity test mode uses un-calibrated drivers, showing the full range over PVT. No mismatch between pull up and pull down is defined.

9.2 Single-ended AC & DC Output Levels

[ Table 23 ] Single-ended AC & DC output levels NOTE : 1. The swing of ± 0.15 × V DDQ is based on approximately 50% of the static single-ended output peak-to-peak swing with a driver impedance of RZQ/7 Ω and an effective test load of 50Ω to VTT = VDDQ.

9.3 Differential AC & DC Output Levels

[ Table 24 ] Differential AC & DC output levels NOTE : 1. The swing of ± 0.3 × VDDQ is based on approximately 50% of the static differential output peak-to-peak swing with a driver impedance of RZQ/7 Ω and an effective test load of 50Ω to VTT = VDDQ at each of the differential outputs. RONNOM_CT Resistor Vout Max Units NOTE 34 RONPd_CT VOBdc = 0.2 x VDDQ 1.9 34  1 VOLdc = 0.5 x VDDQ 2.0 34  1 VOMdc = 0.8 x VDDQ 2.2 34  1 VOHdc = 1.1 x VDDQ 2.5 34  1 RONPu_CT VOBdc = 0.2 x VDDQ 2.5 34  1 VOLdc = 0.5 x VDDQ 2.2 34  1 VOMdc = 0.8 x VDDQ 2.0 34  1 VOHdc = 1.1 x VDDQ 1.9 34  1 Symbol Parameter DDR4-1600/1866/2133/2400/2666 Units NOTE VOH(DC) DC output high measurement level (for IV curve linearity) 1.1 x V DDQ V VOM(DC) DC output mid measurement level (for IV curve linearity) 0.8 x V DDQ V VOL(DC) DC output low measurement level (for IV curve linearity) 0.5 x V DDQ V VOH(AC) AC output high measurement level (for output SR) (0.7 + 0.15) x V DDQ V1 VOL(AC) AC output low measurement level (for output SR) (0.7 - 0.15) x V DDQ V1 Symbol Parameter DDR4-1600/1866/2133/2400/2666 Units NOTE VOHdiff(AC) AC differential output high measurement level (for output SR) +0.3 x V DDQ V1 VOLdiff(AC) AC differential output low measurement level (for output SR) -0.3 x V DDQ V1

• 28 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB

9.4 Single-ended Output Slew Rate

With the reference load for timing measurements, output slew rate for falling and rising edges is defined and measured between VOL(AC) and VOH(AC) for single ended signals as shown in Table 25 and Figure 17. [ Table 25 ] Single-ended output slew rate definition NOTE : 1. Output slew rate is verified by design and characterization, and may not be subject to production test. Figure 17. Single-ended Output Slew Rate Definition

1. In two cases, a maximum slew rate of 12 V/ns applies for a single DQ signal within a byte lane.

same byte lane are static (i.e. they stay at either high or low). Single ended output slew rate for rising edge VOL(AC) V OH(AC) [V OH(AC)-VOL(AC)] / Delta TRse Single ended output slew rate for falling edge VOH(AC) V OL(AC) [V OH(AC)-VOL(AC)] / Delta TFse Parameter Symbol DDR4-1600 DDR4-1866 DDR4-2133 DDR4-2400 DDR4-2666 Units Min Max Min Max Min Max Min Max Min Max Single ended output slew rate SRQse 49494949 T B D T B D V/ns VOH(AC) VOL(AC) delta TRsedelta TFse VTT

• 29 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB

9.5 Differential Output Slew Rate

With the reference load for timing measurements, output slew rate for falling and rising edges is defined and measured between VOLdiff(AC) and VOHdiff(AC) for differential signals as shown in Table 27 and Figure 18. [ Table 27 ] Differential output slew rate definition NOTE : 1. Output slew rate is verified by design and characterization, and may not be subject to production test. Figure 18. Differential Output Slew Rate Definition Differential output slew rate for rising edge VOLdiff(AC) V OHdiff(AC) [V OHdiff(AC)-VOLdiff(AC)] / Delta TRdiff Differential output slew rate for falling edge VOHdiff(AC) V OLdiff(AC) [V OHdiff(AC)-VOLdiff(AC)] /Delta TFdiff Parameter Symbol DDR4-1600 DDR4-1866 DDR4-2133 DDR4-2400 DDR4-2666 Units Min Max Min Max Min Max Min Max Min Max Differential output slew rate SRQdiff 8 18 8 18 8 18 8 18 TBD TBD V/ns VOHdiff(AC) VOLdiff(AC) delta TRdiffdelta TFdiff VTT

9.6 Single-ended AC & DC Output Levels of Connectivity Test Mode

Following output parameters will be applied for DDR4 SDRAM Output Signal during Connectivity Test Mode.

1. The effective test load is 50Ω terminated by VTT = 0.5 * VDDQ.

Figure 19. Output Slew Rate Definition of Connectivity Test Mode

9.7 Test Load for Connectivity Test Mode Timing

The reference load for ODT timings is defined in Figure 18 . Figure 20. Connectivity Test Mode Timing Reference Load

• 31 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB 10. Speed Bin [ Table 31 ] DDR4-1600 Speed Bins and Operations Speed Bin DDR4-1600 Unit NOTECL-nRCD-nRP 11-11-11 Parameter Symbol min max Internal read command to first data tAA 13.7512 (13.50)5,10 18.00 ns 11 Internal read command to first data with read DBI enabled tAA_DBI tAA(min) + 2nCK tAA(max) +2nCK ns 11 ACT to internal read or write delay time tRCD 13.7512 PRE command period tRP 13.7512 ACT to PRE command period tRAS 35 9 x tREFI ns 11 ACT to ACT or REF command period tRC 48.75 Normal Read DBI CWL = 9 CL = 9 CL = 11 tCK(AVG) 1.5 (Optional)5,10 CL = 10 CL = 12 tCK(AVG) Reserved ns 1,2,3,4,10 CWL = 9,11 CL = 10 CL = 12 tCK(AVG) Reserved ns 1,2,3,4 CL = 11 CL = 13 tCK(AVG) 1.25 <1.5 ns 1,2,3,4 CL = 12 CL = 14 tCK(AVG) 1.25 <1.5 ns 1,2,3 Supported CL Settings 9,11,12 nCK 12,13 Supported CL Settings with read DBI 11,13,14 nCK 13 Supported CWL Settings 9,11 nCK

• 32 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB [ Table 32 ] DDR4-1866 Speed Bins and Operations Speed Bin DDR4-1866 Unit NOTECL-nRCD-nRP 13-13-13 Parameter Symbol min max Internal read command to first data tAA 13.9212 (13.50)5,10 18.00 ns 11 Internal read command to first data with read DBI enabled tAA_DBI tAA(min) + 2nCK tAA(max) +2nCK ns 11 ACT to internal read or write delay time tRCD 13.9212 PRE command period tRP 13.9212 ACT to PRE command period tRAS 34 9 x tREFI ns 11 ACT to ACT or REF command period tRC 47.92 Normal Read DBI CWL = 9 CL = 9 CL = 11 tCK(AVG) 1.5 (Optional)5,10 CL = 10 CL = 12 tCK(AVG) Reserved ns 1,2,3,4,10 CWL = 9,11 CL = 10 CL = 12 tCK(AVG) Reserved ns 4 CL = 11 CL = 13 tCK(AVG) 1.25 <1.5 ns 1,2,3,4,6 (Optional)5,10 CL = 12 CL = 14 tCK(AVG) 1.25 <1.5 ns 1,2,3,6 CWL = 10,12 CL = 12 CL = 14 tCK(AVG) Reserved ns 1,2,3,4 CL = 13 CL = 15 tCK(AVG) 1.071 <1.25 ns 1,2,3,4 CL = 14 CL = 16 tCK(AVG) 1.071 <1.25 ns 1,2,3 Supported CL Settings 9,11,12,13,14 nCK 12,13 Supported CL Settings with read DBI 11,13,14,15,16 nCK 13 Supported CWL Settings 9,10,11,12 nCK

• 33 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB [ Table 33 ] DDR4-2133 Speed Bins and Operations Speed Bin DDR4-2133 Unit NOTECL-nRCD-nRP 15-15-15 Parameter Symbol min max Internal read command to first data tAA 14.0612 (13.75)5,10 18.00 ns 11 Internal read command to first data with read DBI enabled tAA_DBI tAA(min) + 3nCK tAA(max) + 3nCK ns 11 ACT to internal read or write delay time tRCD 14.06 PRE command period tRP 14.06 ACT to PRE command period tRAS 33 9 x tREFI ns 11 ACT to ACT or REF command period tRC 47.06 Normal Read DBI CWL = 9 CL = 9 CL = 11 tCK(AVG) 1.5 2(Optional)5,10 CL = 10 CL = 12 tCK(AVG) Reserved ns 1,2,3,10 CWL = 9,11 CL = 11 CL = 13 tCK(AVG) 1.25 <1.5 ns 1,2,3,4,7 (Optional)5,10 CL = 12 CL = 14 tCK(AVG) 1.25 <1.5 ns 1,2,3,7 CWL = 10,12 CL = 13 CL = 15 tCK(AVG) 1.071 <1.25 ns 1,2,3,4,7 (Optional)5,10 CL = 14 CL = 16 tCK(AVG) 1.071 <1.25 ns 1,2,3,7 CWL = 11,14 CL = 14 CL = 17 tCK(AVG) Reserved ns 1,2,3,4 CL = 15 CL = 18 tCK(AVG) 0.937 <1.071 ns 1,2,3,4 CL = 16 CL = 19 tCK(AVG) 0.937 <1.071 ns 1,2,3 Supported CL Settings 9,11.12,13,14,15,16 nCK 12,13 Supported CL Settings with read DBI 11,13,14,15,16,18,19 nCK Supported CWL Settings 9,10,11,12,14 nCK

• 34 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB [ Table 34 ] DDR4-2400 Speed Bins and Operations Speed Bin DDR4-2400 Unit NOTECL-nRCD-nRP 17-17-17 Parameter Symbol min max Internal read command to first data tAA 14.16 (13.75)5,10 18.00 ns 11 Internal read command to first data with read DBI enabled tAA_DBI tAA(min) + 3nCK tAA(max) + 3nCK ns 11 ACT to internal read or write delay time tRCD 14.16 PRE command period tRP 14.16 ACT to PRE command period tRAS 32 9 x tREFI ns 11 ACT to ACT or REF command period tRC 46.16 Normal Read DBI CWL = 9 CL = 9 CL = 11 tCK(AVG) Reserved ns 1,2,3,4,10 CL = 10 CL = 12 tCK(AVG) 1.5 1.6 ns 1,2,3,4,10 CWL = 9,11 CL = 10 CL = 12 tCK(AVG) Reserved ns 4 CL = 11 CL = 13 tCK(AVG) 1.25 <1.5 ns 1,2,3,4,8 (Optional)5,10 CL = 12 CL = 14 tCK(AVG) 1.25 <1.5 ns 1,2,3,8 CWL = 10,12 CL = 12 CL = 14 tCK(AVG) Reserved ns 4 CL = 13 CL = 15 tCK(AVG) (Optional)5,10 CL = 14 CL = 16 tCK(AVG) 1.071 <1.25 ns 1,2,3,8 CWL = 11,14 CL = 14 CL = 17 tCK(AVG) Reserved ns 4 CL = 15 CL = 18 tCK(AVG) (Optional)5,10 CL = 16 CL = 19 tCK(AVG) 0.938 <1.071 ns 1,2,3,8 CWL = 12,16 CL = 15 CL = 18 tCK(AVG) Reserved ns 1,2,3,4 CL = 16 CL = 19 tCK(AVG) Reserved ns 1,2,3,4 CL = 17 CL = 20 tCK(AVG) 0.833 <0.937 CL = 18 CL = 21 tCK(AVG) 0.833 <0.937 ns 1,2,3 Supported CL Settings 10,11,12,13,14,15,16,17,18 nCK 12 Supported CL Settings with read DBI 12,13,14,15,16,18,19,20,21 nCK Supported CWL Settings 9,10,11,12,14,16 nCK

• 35 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB [ Table 35 ] DDR4-2666 Speed Bins and Operations Speed Bin DDR4-2666 Unit NOTECL-nRCD-nRP 19-19-19 Parameter Symbol min max Internal read command to first data tAA 14.2513 (13.75)5,11 18.00 ns 11 Internal read command to first data with read DBI enabled tAA_DBI tAA(min) + 3nCK tAA(max) + 3nCK ns 11 ACT to internal read or write delay time tRCD 14.25 PRE command period tRP 14.2513 ACT to PRE command period tRAS 32 9 x tREFI ns 11 ACT to ACT or REF command period tRC 46.25 Normal Read DBI CWL = 9 CL = 9 CL = 11 tCK(AVG) Reserved ns 1,2,3,4,11 CL = 10 CL = 12 tCK(AVG) 1.5 1.6 ns 1,2,3,11 CWL = 9,11 CL = 10 CL = 12 tCK(AVG) Reserved ns 4 CL = 11 CL = 13 tCK(AVG) 1.25 <1.5 ns 1,2,3,4,9 (Optional)5,11 CL = 12 CL = 14 tCK(AVG) 1.25 <1.5 ns 1,2,3,9 CWL = 10,12 CL = 12 CL = 14 tCK(AVG) Reserved ns 4 CL = 13 CL = 15 tCK(AVG) 1.071 <1.25 ns 1,2,3,4,9 (Optional)5,11 CL = 14 CL = 16 tCK(AVG) 1.071 <1.25 ns 1,2,3,9 CWL = 11,14 CL = 14 CL = 17 tCK(AVG) Reserved ns 4 CL = 15 CL = 18 tCK(AVG) 0.937 <1.071 ns 1,2,3,4,9 (Optional)5,11 CL = 16 CL = 19 tCK(AVG) 0.937 <1.071 ns 1,2,3,9 CWL = 12,16 CL = 15 CL = 18 tCK(AVG) Reserved ns 4 CL = 16 CL = 19 tCK(AVG) Reserved ns 1,2,3,4S9 CL = 17 CL = 20 tCK(AVG) 0.833 <0.937 ns 1,2,3,4S9 (Optional)5,11 1,2,3,4S9 CL = 18 CL = 21 tCK(AVG) 0.833 <0.937 ns 1,2,3 CWL = 14.18 CL = 17 CL = 20 tCK(AVG) Reserved ns 1,2,3S4 CL = 18 CL = 21 tCK(AVG) Reserved ns 1,2,3S4 CL = 19 CL = 22 tCK(AVG) 0.75 <0.833 ns 1,2,3S4 CL = 20 CL = 23 tCK(AVG) 0.75 <0.833 ns 1,2,3 Supported CL Settings 10,11,12,13,14,15,16,17,18,19,20 nCK 12 Supported CL Settings with read DBI 12,13,14,15,17,18,19,20,21,22,23 nCK Supported CWL Settings 9,10,11,12,14,16,18 nCK

• 36 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB

10.1 Speed Bin Table Note

• VDDQ = VDD = 1.20V +/- 0.06 V - The values defined with above-mentioned table are DLL ON case. - DDR4-1600, 1866, 2133S2400Gand 2666 Speed Bin Tables are valid only when Geardown Mode is disabled. 1. The CL setting and CWL setting result in tCK(avg).MIN and tCK(avg).MAX requirements. When making a selection of tCK(avg), both need to be fulfilled: Requirements from CL setting as well as requirements from CWL setting. 2. tCK(avg).MIN limits: Since CAS Latency is not purely analog - data and strobe output are synchronized by the DLL - all possible intermediate frequencies may not be tCK(avg) [ns], rounding up to the next ‘Supported CL’, where tAA = 12.5ns and tCK(avg) = 1.3 ns should only be used for CL = 10 calculation. 4. ‘Reserved’ settings are not allowed. User must program a different value. 5. 'Optional' settings allow certain devices in the industry to support this setting, however, it is not a mandatory feature. Refer to supplier's data sheet and/or the DIMM SPD information if and how this setting is supported. 6. Any DDR4-1866 speed bin also supports functional operation at lower frequencies as shown in the table which are not subject to Production Tests but verified by Design/ Characterization. 7. Any DDR4-2133 speed bin also supports functional operation at lower frequencies as shown in the table which are not subject to Production Tests but verified by Design/ Characterization. 8. Any DDR4-2400 speed bin also supports functional operation at lower frequencies as shown in the table which are not subject to Production Tests but verified by Design/ Characterization. 9. Any DDR4-2666 speed bin also supports functional operation at lower frequencies as shown in the table which are not subject to Production Tests but verified by Design/ Characterization. 10 DDR4-1600 AC timing apply if DRAM operates at lower than 1600 MT/s data rate. 11. Parameters apply from tCK(avg)min to tCK(avg)max at all standard JEDEC clock period values as stated in the Speed Bin Tables. 12. CL number in parentheses, it means that these numbers are optional. 13. DDR4 SDRAM supports CL=9 as long as a system meets tAA(min). 14. Each speed bin lists the timing requirements that need to be supported in order for a given DRAM to be JEDEC compliant. JEDEC compliance does not require support for all speed bins within a given speed. JEDEC compliance requires meeting the parameters for a least one of the listed speed bins.

• 37 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB 11. IDD and IDDQ Specification Parameters and Test condi - tions

11.1 IDD, IPP and IDDQ Measurement Conditions

In this chapter, IDD, IPP and IDDQ measurement conditions such as test load and patterns are defined. Figure 21 shows the setup and test load for IDD, IPP and IDDQ measurements. l IDD currents (such as IDD0, IDD0A, IDD1, IDD1A, IDD2N, IDD2NA, IDD2NL, IDD2NT, IDD2P, IDD2Q, IDD3N, IDD3NA, IDD3P, IDD4R, IDD4 RA, IDD4W, IDD4WA, IDD5B, IDD5F2, IDD5F4, IDD6N, IDD6E, IDD6R, IDD6A, IDD7 and IDD8) are measured as time-averaged currents with all VDD balls of the DDR4 SDRAM under test tied together. Any IPP or IDDQ current is not included in IDD currents. l IPP currents have the same definition as IDD except that the current on the VPP supply is measured. l IDDQ currents (such as IDDQ2NT and IDDQ4R) are measured as time-averaged currents with all VDDQ balls of the DDR4 SDRAM under test tied together. Any IDD current is not included in IDDQ currents. Attention: IDDQ values cannot be directly used to calculate IO power of the DDR4 SDRAM. They can be used to support correlation of simulated IO power to actual IO power as outlined in Figure 22. In DRAM module application, IDDQ cannot be measured separately since VDD and VDDQ are using one merged-power layer in Module PCB. For IDD, IPP and IDDQ measurements, the following definitions apply: l “0” and “LOW” is defined as VIN <= V ILAC(max). l “1” and “HIGH” is defined as VIN >= V IHAC(min). l “MID-LEVEL” is defined as inputs are VREF = VDD / 2. l Timings used for IDD, IPP and IDDQ Measurement-Loop Patterns are provided in Table 36. l Basic IDD, IPP and IDDQ Measurement Conditions are described in Table 37. l Detailed IDD, IPP and IDDQ Measurement-Loop Patterns are described in Table 38 through Table 46. l IDD Measurements are done after properly initializing the DDR4 SDRAM. This includes but is not limited to setting RON = RZQ/7 (34 Ohm in MR1); RTT_NOM = RZQ/6 (40 Ohm in MR1); RTT_WR = RZQ/2 (120 Ohm in MR2); RTT_PARK = Disable; Qoff = 0B (Output Buffer enabled) in MR1; TDQS_t disabled in MR1; CRC disabled in MR2; CA parity feature disabled in MR5; Gear down mode disabled in MR3 Read/Write DBI disabled in MR5; DM disabled in MR5 l Attention: The IDD, IPP and IDDQ Measurement-Loop Patterns need to be executed at least one time before actual IDD or IDDQ mea surement is started. l Define D = {CS_n, ACT_n, RAS_n, CAS_n, WE_n } := {HIGH, LOW, LOW, LOW, LOW} ; apply BG/BA changes when directed. l Define D# = {CS_n, ACT_n, RAS_n, CAS_n, WE_n } := {HIGH, HIGH, HIGH, HIGH, HIGH} apply invert of BG/BA changes when directed a bove.

• 39 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB [ Table 36 ] Timings used for IDD, IPP and IDDQ Measurement-Loop Patterns Symbol DDR4-1600 DDR4-1866 DDR4-2133 DDR4-2400 DDR4-2666 Unit 11-11-11 13-13-13 15-15-15 17-17-17 19-19-19 tCK 1.25 1.071 0.938 0.833 TBD ns CL 11 13 15 17 TBD nCK CWL 11 12 14 16 TBD nCK nRCD 11 13 15 17 TBD nCK nRC 39 45 51 56 TBD nCK nRAS 28 32 36 39 TBD nCK nRP 11 13 15 17 TBD nCK nFAW x4 16 16 16 16 TBD nCK x8 20 22 23 26 TBD nCK x16 28 28 32 36 TBD nCK nRRDS x4 4 4 4 4 TBD nCK x8 4 4 4 4 TBD nCK x16 5 5 6 7 TBD nCK nRRDL x4 5 5 6 6 TBD nCK x8 5 5 6 6 TBD nCK x16 6 6 7 8 TBD nCK tCCD_S 4 4 4 4 TBD nCK tCCD_L 5 5 6 6 TBD nCK tWTR_S 2 3 3 3 TBD nCK tWTR_L 6 7 8 9 TBD nCK nRFC 2Gb 128 150 171 193 TBD nCK nRFC 4Gb 208 243 278 313 TBD nCK nRFC 8Gb 280 327 374 421 TBD nCK TBD nCK

• 40 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB [ Table 37 ] Basic IDD, IPP and IDDQ Measurement Conditions Symbol Description IDD0 Operating One Bank Active-Precharge Current (AL=0) CKE: High; External clock: On; tCK, nRC, nRAS, CL: see Table 36 on page 39; BL: 81; AL: 0; CS_n: High between ACT and PRE; Command, Address, Bank Group Address, Bank Address Inputs: partially toggling according to Table 38 on page 43; Data IO: VDDQ; DM_n: stable at 1; Bank Activity: Cycling with one bank active at a time: 0,0,1,1,2,2,... (see Table 38 on page 43); Output Buffer and RTT: Enabled in Mode Registers2; ODT Signal: stable at 0; Pattern Details: see Table 38 on page 43 IDD0A Operating One Bank Active-Precharge Current (AL=CL-1) AL = CL-1, Other conditions: see IDD0 IPP0 Operating One Bank Active-Precharge IPP Current Same condition with IDD0 IDD1 Operating One Bank Active-Read-Precharge Current (AL=0) CKE: High; External clock: On; tCK, nRC, nRAS, nRCD, CL: see Table 36 on page 39; BL: 81; AL: 0; CS_n: High between ACT, RD and PRE; Command, Address, Bank Group Address, Bank Address Inputs, Data IO: partially toggling according to Table 39 on page 44; DM_n: stable at 1; Bank Activity: Cycling with one bank active at a time: 0,0,1,1,2,2,... (see Table 39 on page 44); Output Buf- fer and RTT: Enabled in Mode Registers2; ODT Signal: stable at 0; Pattern Details: see Table 39 on page 44 IDD1A Operating One Bank Active-Read-Precharge Current (AL=CL-1) AL = CL-1, Other conditions: see IDD1 IPP1 Operating One Bank Active-Read-Precharge IPP Current Same condition with IDD1 IDD2N Precharge Standby Current (AL=0) CKE: High; External clock: On; tCK, CL: see Table 36 on page 39; BL: 81; AL: 0; CS_n: stable at 1; Command, Address, Bank Group Address, Bank Address Inputs: partially toggling according to Table 40 on page 45; Data IO: VDDQ; DM_n: stable at 1; Bank Activity: all banks closed; Output Buffer and RTT: Enabled in Mode Registers2; ODT Signal: stable at 0; Pattern Details: see Table 40 on page 45 IDD2NA Precharge Standby Current (AL=CL-1) AL = CL-1, Other conditions: see IDD2N IPP2N Precharge Standby IPP Current Same condition with IDD2N IDD2NT Precharge Standby ODT Current CKE: High; External clock: On; tCK, CL: see Table 36 on page 39; BL: 81; AL: 0; CS_n: stable at 1; Command, Address, Bank Group Address, Bank Address Inputs: partially toggling according to Table 41 on page 46; Data IO: VSSQ; DM_n: stable at 1; Bank Activity: all banks closed; Output Buffer and RTT: Enabled in Mode Registers2; ODT Signal: toggling according to Table 41 on page 46; Pattern Details: see Table 41 on page 46 IDDQ2NT (Optional) Precharge Standby ODT IDDQ Current Same definition like for IDD2NT, however measuring IDDQ current instead of IDD current IDD2NL Precharge Standby Current with CAL enabled Same definition like for IDD2N, CAL enabled3,5 IDD2NG Precharge Standby Current with Gear Down mode enabled Same definition like for IDD2N, Gear Down mode enabled3,5 IDD2ND Precharge Standby Current with DLL disabled Same definition like for IDD2N, DLL disabled3 IDD2N_par Precharge Standby Current with CA parity enabled Same definition like for IDD2N, CA parity enabled3 IDD2P Precharge Power-Down Current CKE: Low; External clock: On; tCK, CL: see Table 36 on page 39; BL: 81; AL: 0; CS_n: stable at 1; Command, Address, Bank Group Address, Bank Address Inputs: stable at 0; Data IO: VDDQ; DM_n: stable at 1; Bank Activity: all banks closed; Output Buffer and RTT: Enabled in Mode Registers2; ODT Signal: stable at 0 IPP2P Precharge Power-Down IPP Current Same condition with IDD2P IDD2Q Precharge Quiet Standby Current CKE: High; External clock: On; tCK, CL: see Table 36 on page 39; BL: 81; AL: 0; CS_n: stable at 1; Command, Address, Bank Group Address, Bank Address Inputs: stable at 0; Data IO: VDDQ; DM_n: stable at 1;Bank Activity: all banks closed; Output Buffer and RTT: Enabled in Mode Registers2; ODT Signal: stable at 0 IDD3N Active Standby Current CKE: High; External clock: On; tCK, CL: see Table 36 on page 39; BL: 81; AL: 0; CS_n: stable at 1; Command, Address, Bank Group Address, Bank Address Inputs: partially toggling according to Table 40 on page 45; Data IO: VDDQ; DM_n: stable at 1;Bank Activity: all banks open; Output Buffer and RTT: Enabled in Mode Registers2; ODT Signal: stable at 0; Pattern Details: see Table 40 on page 45

• 41 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB Symbol Description IDD3NA Active Standby Current (AL=CL-1) AL = CL-1, Other conditions: see IDD3N IPP3N Active Standby IPP Current Same condition with IDD3N IDD3P Active Power-Down Current CKE: Low; External clock: On; tCK, CL: see Table 36 on page 39; BL: 81; AL: 0; CS_n: stable at 1; Command, Address, Bank Group Address, Bank Address Inputs: stable at 0; Data IO: VDDQ; DM_n: stable at 1; Bank Activity: all banks open; Output Buffer and RTT: Enabled in Mode Registers2; ODT Signal: stable at 0 IPP3P Active Power-Down IPP Current Same condition with IDD3P IDD4R Operating Burst Read Current CKE: High; External clock: On; tCK, CL: see Table 36 on page 39; BL: 82; AL: 0; CS_n: High between RD; Command, Address, Bank Group Address, Bank Address Inputs: partially toggling according to Table 42 on page 47; Data IO: seamless read data burst with different data between one burst and the next one according to Table 42 on page 47; DM_n: stable at 1; Bank Activity: all banks open, RD commands cycling through banks: 0,0,1,1,2,2,... (see Table 42 on page 47); Output Buffer and RTT: Enabled in Mode Registers2; ODT Signal: stable at 0; Pattern Details: see Table 42 on page 47 IDD4RA Operating Burst Read Current (AL=CL-1) AL = CL-1, Other conditions: see IDD4R IDD4RB Operating Burst Read Current with Read DBI Read DBI enabled3, Other conditions: see IDD4R IPP4R Operating Burst Read IPP Current Same condition with IDD4R IDDQ4R (Optional) Operating Burst Read IDDQ Current Same definition like for IDD4R, however measuring IDDQ current instead of IDD current IDDQ4RB (Optional) Operating Burst Read IDDQ Current with Read DBI Same definition like for IDD4RB, however measuring IDDQ current instead of IDD current IDD4W Operating Burst Write Current CKE: High; External clock: On; tCK, CL: see Table 36 on page 39; BL: 81; AL: 0; CS_n: High between WR; Command, Address, Bank Group Address, Bank Address Inputs: partially toggling according to Table 43 on page 48; Data IO: seamless write data burst with different data between one burst and the next one according to Table 43 on page 48; DM_n: stable at 1; Bank Activity: all banks open, WR commands cycling through banks: 0,0,1,1,2,2,... (see Table 43 on page 48); Output Buffer and RTT: Enabled in Mode Registers2; ODT Signal: stable at HIGH; Pattern Details: see Table 43 on page 48 IDD4WA Operating Burst Write Current (AL=CL-1) AL = CL-1, Other conditions: see IDD4W IDD4WB Operating Burst Write Current with Write DBI Write DBI enabled3, Other conditions: see IDD4W IDD4WC Operating Burst Write Current with Write CRC Write CRC enabled3, Other conditions: see IDD4W IDD4W_par Operating Burst Write Current with CA Parity CA Parity enabled3, Other conditions: see IDD4W IPP4W Operating Burst Write IPP Current Same condition with IDD4W IDD5B Burst Refresh Current (1X REF) CKE: High; External clock: On; tCK, CL, nRFC: see Table 36 on page 39; BL: 81; AL: 0; CS_n: High between REF; Command, Address, Bank Group Address, Bank Address Inputs: partially toggling according to Table 45 on page 50; Data IO: VDDQ; DM_n: stable at 1; Bank Activity: REF command every nRFC (see Table 45 on page 50); Output Buffer and RTT: Enabled in Mode Registers2; ODT Signal: stable at 0; Pattern Details: see Table 45 on page 50 IPP5B Burst Refresh Write IPP Current (1X REF) Same condition with IDD5B IDD5F2 Burst Refresh Current (2X REF) tRFC=tRFC_x2, Other conditions: see IDD5B IPP5F2 Burst Refresh Write IPP Current (2X REF) Same condition with IDD5F2 IDD5F4 Burst Refresh Current (4X REF) tRFC=tRFC_x4, Other conditions: see IDD5B IPP5F4 Burst Refresh Write IPP Current (4X REF) Same condition with IDD5F4

• 42 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB NOTE : 1. Burst Length: BL8 fixed by MRS: set MR0 [A1:0=00]. 2. Output Buffer Enable - set MR1 [A12 = 0] : Qoff = Output buffer enabled - set MR1 [A2:1 = 00] : Output Driver Impedance Control = RZQ/7 RTT_Nom enable - set MR1 [A10:8 = 011] : RTT_NOM = RZQ/6 RTT_WR enable - set MR2 [A10:9 = 01] : RTT_WR = RZQ/2 RTT_PARK disable - set MR5 [A8:6 = 000] 3. CAL enabled : set MR4 [A8:6 = 001] : 1600MT/s 010] : 1866MT/s, 2133MT/s 011] : 2400MT/s Gear Down mode enabled :set MR3 [A3 = 1] : 1/4 Rate DLL disabled : set MR1 [A0 = 0] CA parity enabled :set MR5 [A2:0 = 001] : 1600MT/s,1866MT/s, 2133MT/s 010] : 2400MT/s Read DBI enabled : set MR5 [A12 = 1] Write DBI enabled : set :MR5 [A11 = 1] 4. Low Power Array Self Refresh (LP ASR) : set MR2 [A7:6 = 00] : Normal 01] : Reduced Temperature range 10] : Extended Temperature range 11] : Auto Self Refresh 5. IDD2NG should be measured after sync pulse(NOP) input. Symbol Description IDD6N Self Refresh Current: Normal Temperature Range TCASE: 0 - 85°C; Low Power Array Self Refresh (LP ASR) : Normal4; CKE: Low; External clock: Off; CK_t and CK_c#: LOW; CL: see Table 36 on page 39; BL: 81; AL: 0; CS_n#, Command, Address, Bank Group Address, Bank Address, Data IO: High; DM_n: stable at 1; Bank Activity: Self-Refresh operation; Output Buffer and RTT: Enabled in Mode Registers2; ODT Signal: MID-LEVEL IPP6N Self Refresh IPP Current: Normal Temperature Range Same condition with IDD6N IDD6E Self-Refresh Current: Extended Temperature Range) TCASE: 0 - 95°C; Low Power Array Self Refresh (LP ASR) : Extended4; CKE: Low; External clock: Off; CK_t and CK_c: LOW; CL: see Table 36 on page 39; BL: 81; AL: 0; CS_n, Command, Address, Bank Group Address, Bank Address, Data IO: High; DM_n:stable at 1; Bank Activity: Extended Temperature Self-Refresh operation; Output Buffer and RTT: Enabled in Mode Registers2; ODT Signal: MID- LEVEL IPP6E Self Refresh IPP Current: Extended Temperature Range Same condition with IDD6E IDD6R Self-Refresh Current: Reduced Temperature Range TCASE: 0 - 45°C; Low Power Array Self Refresh (LP ASR) : Reduced4; CKE: Low; External clock: Off; CK_t and CK_c#: LOW; CL: see Table 36 on page 39; BL: 81; AL: 0; CS_n#, Command, Address, Bank Group Address, Bank Address, Data IO: High; DM_n:stable at 1; Bank Activity: Extended Temperature Self-Refresh operation; Output Buffer and RTT: Enabled in Mode Registers2; ODT Signal: MID- LEVEL IPP6R Self Refresh IPP Current: Reduced Temperature Range Same condition with IDD6R IDD6A Auto Self-Refresh Current TCASE: 0 - 95°C; Low Power Array Self Refresh (LP ASR) : Auto4;CKE: Low; External clock: Off; CK_t and CK_c#: LOW; CL: see Table 36 on page 39; BL: 81; AL: 0; CS_n#, Command, Address, Bank Group Address, Bank Address, Data IO: High; DM_n:stable at 1; Bank Activity: Auto Self-Refresh operation; Output Buffer and RTT: Enabled in Mode Registers2; ODT Signal: MID-LEVEL IPP6A Auto Self-Refresh IPP Current Same condition with IDD6A IDD7 Operating Bank Interleave Read Current CKE: High; External clock: On; tCK, nRC, nRAS, nRCD, nRRD, nFAW, CL: see Table 36 on page 39; BL: 81; AL: CL-1; CS_n: High between ACT and RDA; Command, Address, Bank Group Address, Bank Address Inputs: partially toggling according to Table 46 on page 51; Data IO: read data bursts with different data between one burst and the next one according to Table 46 on page 51; DM_n: stable at 1; Bank Activity: two times interleaved cycling through banks (0, 1, ...7) with different addressing, see Table 46 on page 51; Output Buffer and RTT: Enabled in Mode Registers2; ODT Signal: stable at 0; Pattern Details: see Table 46 on page 51 IPP7 Operating Bank Interleave Read IPP Current Same condition with IDD7 IDD8 Maximum Power Down Current TBD IPP8 Maximum Power Down IPP Current Same condition with IDD8

• 43 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB [ Table 38 ] IDD0, IDD0A and IPP0 Measurement-Loop Pattern1 NOTE : 1. DQS_t, DQS_c are VDDQ. 2. BG1 is don’t care for x16 device 3. C[2:0] are used only for 3DS device 4. DQ signals are VDDQ. CK_t /CK_c CKE Sub-Loop Cycle Number Command CS_n ACT_n RAS_n CAS_n/ A15 WE_n/ A14 ODT C[2:0]3 BG[1:0]2 BA[1:0] A12/BC_n A[13,11] A[10]/AP A[9:7] A[6:3] A[2:0] Data4 toggling Static High

0 ACT 000000000000000 -

1 , 2 D , D 100000000000000 - 3,4 D_#, D_# 1 1 1 1 1 0 0 32 30007F0 - nRAS PRE 0 1 0 1 0 0 000000000 - 1 1*nRC repeat Sub-Loop 0, use BG[1:0]2 = 1, BA[1:0] = 1 instead 2 2*nRC repeat Sub-Loop 0, use BG[1:0]2 = 0, BA[1:0] = 2 instead 3 3*nRC repeat Sub-Loop 0, use BG[1:0]2 = 1, BA[1:0] = 3 instead 4 4*nRC repeat Sub-Loop 0, use BG[1:0]2 = 0, BA[1:0] = 1 instead 5 5*nRC repeat Sub-Loop 0, use BG[1:0]2 = 1, BA[1:0] = 2 instead 6 6*nRC repeat Sub-Loop 0, use BG[1:0]2 = 0, BA[1:0] = 3 instead 7 7*nRC repeat Sub-Loop 0, use BG[1:0]2 = 1, BA[1:0] = 0 instead 8 8*nRC repeat Sub-Loop 0, use BG[1:0]2 = 2, BA[1:0] = 0 instead For x4 and x8 only 9 9*nRC repeat Sub-Loop 0, use BG[1:0]2 = 3, BA[1:0] = 1 instead 10 10*nRC repeat Sub-Loop 0, use BG[1:0]2 = 2, BA[1:0] = 2 instead 11 11*nRC repeat Sub-Loop 0, use BG[1:0]2 = 3, BA[1:0] = 3 instead 12 12*nRC repeat Sub-Loop 0, use BG[1:0]2 = 2, BA[1:0] = 1 instead 13 13*nRC repeat Sub-Loop 0, use BG[1:0]2 = 3, BA[1:0] = 2 instead 14 14*nRC repeat Sub-Loop 0, use BG[1:0]2 = 2, BA[1:0] = 3 instead 15 15*nRC repeat Sub-Loop 0, use BG[1:0]2 = 3, BA[1:0] = 0 instead

• 44 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB [ Table 39 ] IDD1, IDD1A and IPP1 Measurement-Loop Pattern1 NOTE : 1. DQS_t, DQS_c are used according to RD Commands, otherwise VDDQ 2. BG1 is don’t care for x16 device 3. C[2:0] are used only for 3DS device 4. Burst Sequence driven on each DQ signal by Read Command. Outside burst operation, DQ signals are VDDQ. CK_t, CK_c CKE Sub-Loop Cycle Number Command CS_n ACT_n RAS_n CAS_n/A15 WE_n/A14 ODT C[2:0]3 BG[1:0]2 BA[1:0] A12/BC_n A[13,11] A[10]/AP A[9:7] A[6:3] A[2:0] Data4 toggling Static High

0 ACT 00000000 00 00000 -

1 , 2 D , D 10000000 00 00000 - 3, 4 D#, D# 1111100 3b 30 007F0 - nRCD -AL RD 011010000000000 D0=00, D1=FF D2=FF, D3=00 D4=FF, D5=00 D6=00, D7=FF nRAS PRE 01010000 00 00000 - 1*nRC + 0 ACT 00011001 10 00000 - 1*nRC + 1, 2 D, D 100000 00 00000 00 - 1*nRC + 3, 4 D#, D# 111110 0 3b 30 007F0 - 1*nRC + nRCD - AL RD 011010 01 10000 00 D0=FF, D1=00 D2=00, D3=FF D4=00, D5=FF D6=FF, D7=00 1*nRC + nRAS PRE 01010000 00 00000 - 2 2*nRC repeat Sub-Loop 0, use BG[1:0] 2 = 0, BA[1:0] = 2 instead 3 3*nRC repeat Sub-Loop 1, use BG[1:0]2 = 1, BA[1:0] = 3 instead 4 4*nRC repeat Sub-Loop 0, use BG[1:0]2 = 0, BA[1:0] = 1 instead 5 5*nRC repeat Sub-Loop 1, use BG[1:0]2 = 1, BA[1:0] = 2 instead 6 6*nRC repeat Sub-Loop 0, use BG[1:0]2 = 0, BA[1:0] = 3 instead 8 7*nRC repeat Sub-Loop 1, use BG[1:0]2 = 1, BA[1:0] = 0 instead 9 9*nRC repeat Sub-Loop 1, use BG[1:0]2 = 2, BA[1:0] = 0 instead For x4 and x8 only 10 10*nRC repeat Sub-Loop 0, use BG[1:0]2 = 3, BA[1:0] = 1 instead 11 11*nRC repeat Sub-Loop 1, use BG[1:0]2 = 2, BA[1:0] = 2 instead 12 12*nRC repeat Sub-Loop 0, use BG[1:0]2 = 3, BA[1:0] = 3 instead 13 13*nRC repeat Sub-Loop 1, use BG[1:0]2 = 2, BA[1:0] = 1 instead 14 14*nRC repeat Sub-Loop 0, use BG[1:0]2 = 3, BA[1:0] = 2 instead 15 15*nRC repeat Sub-Loop 1, use BG[1:0]2 = 2, BA[1:0] = 3 instead 16 16*nRC repeat Sub-Loop 0, use BG[1:0]2 = 3, BA[1:0] = 0 instead

• 45 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB [ Table 40 ] IDD2N, IDD2NA, IDD2NL, IDD2NG, IDD2ND, IDD2N_par, IPP2,IDD3N, IDD3NA and IDD3P Measurement-Loop Pattern1 NOTE : 1. DQS_t, DQS_c are VDDQ. 2. BG1 is don’t care for x16 device 3. C[2:0] are used only for 3DS device 4. DQ signals are VDDQ. CK_t, CK_c CKE Sub-Loop Cycle Number Command CS_n ACT_n RAS_n CAS_n/A15 WE_n/A14 ODT C[2:0]3 BG[1:0]2 BA[1:0] A12/BC_n A[13,11] A[10]/AP A[9:7] A[6:3] A[2:0] Data4 toggling Static High

0 D , D 1000000 00 000 00 00

1 D , D 1000000 00 000 00 00

2 D#, D# 1111100 32 3 000 7F 00

3 D#, D# 1111100 32 3 000 7F 00

1 4-7 repeat Sub-Loop 0, use BG[1:0]2 = 1, BA[1:0] = 1 instead 2 8-11 repeat Sub-Loop 0, use BG[1:0]2 = 0, BA[1:0] = 2 instead 3 12-15 repeat Sub-Loop 0, use BG[1:0]2 = 1, BA[1:0] = 3 instead 4 16-19 repeat Sub-Loop 0, use BG[1:0]2 = 0, BA[1:0] = 1 instead 5 20-23 repeat Sub-Loop 0, use BG[1:0]2 = 1, BA[1:0] = 2 instead 6 24-27 repeat Sub-Loop 0, use BG[1:0]2 = 0, BA[1:0] = 3 instead 7 28-31 repeat Sub-Loop 0, use BG[1:0]2 = 1, BA[1:0] = 0 instead 8 32-35 repeat Sub-Loop 0, use BG[1:0]2 = 2, BA[1:0] = 0 instead 9 36-39 repeat Sub-Loop 0, use BG[1:0]2 = 3, BA[1:0] = 1 instead 10 40-43 repeat Sub-Loop 0, use BG[1:0]2 = 2, BA[1:0] = 2 instead 11 44-47 repeat Sub-Loop 0, use BG[1:0]2 = 3, BA[1:0] = 3 instead 12 48-51 repeat Sub-Loop 0, use BG[1:0]2 = 2, BA[1:0] = 1 instead 13 52-55 repeat Sub-Loop 0, use BG[1:0]2 = 3, BA[1:0] = 2 instead 14 56-59 repeat Sub-Loop 0, use BG[1:0]2 = 2, BA[1:0] = 3 instead 15 60-63 repeat Sub-Loop 0, use BG[1:0]2 = 3, BA[1:0] = 0 instead

• 46 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB [ Table 41 ] IDD2NT and IDDQ2NT Measurement-Loop Pattern1 NOTE : 1. DQS_t, DQS_c are VDDQ. 2. BG1 is don’t care for x16 device 3. C[2:0] are used only for 3DS device 4. DQ signals are VDDQ. CK_t, CK_c CKE Sub-Loop Cycle Number Command CS_n ACT_n RAS_n CAS_n/A15 WE_n/A14 ODT C[2:0]3 BG[1:0]2 BA[1:0] A12/BC_n A[13,11] A[10]/AP A[9:7] A[6:3] A[2:0] Data4 toggling Static High

0 D , D 1000000 00 000 00 0-

1 D , D 1000000 00 000 00 0-

2 D#, D# 1111100 32 3 000 7F 0-

3 D#, D# 1111100 32 3 000 7F 0-

1 4-7 repeat Sub-Loop 0, but ODT = 1 and BG[1:0]2 = 1, BA[1:0] = 1 instead 2 8-11 repeat Sub-Loop 0, but ODT = 0 and BG[1:0]2 = 0, BA[1:0] = 2 instead 3 12-15 repeat Sub-Loop 0, but ODT = 1 and BG[1:0]2 = 1, BA[1:0] = 3 instead 4 16-19 repeat Sub-Loop 0, but ODT = 0 and BG[1:0]2 = 0, BA[1:0] = 1 instead 5 20-23 repeat Sub-Loop 0, but ODT = 1 and BG[1:0]2 = 1, BA[1:0] = 2 instead 6 24-27 repeat Sub-Loop 0, but ODT = 0 and BG[1:0]2 = 0, BA[1:0] = 3 instead 7 28-31 repeat Sub-Loop 0, but ODT = 1 and BG[1:0]2 = 1, BA[1:0] = 0 instead 8 32-35 repeat Sub-Loop 0, but ODT = 0 and BG[1:0]2 = 2, BA[1:0] = 0 instead For x4 and x8 only 9 36-39 repeat Sub-Loop 0, but ODT = 1 and BG[1:0]2 = 3, BA[1:0] = 1 instead 10 40-43 repeat Sub-Loop 0, but ODT = 0 and BG[1:0]2 = 2, BA[1:0] = 2 instead 11 44-47 repeat Sub-Loop 0, but ODT = 1 and BG[1:0]2 = 3, BA[1:0] = 3 instead 12 48-51 repeat Sub-Loop 0, but ODT = 0 and BG[1:0]2 = 2, BA[1:0] = 1 instead 13 52-55 repeat Sub-Loop 0, but ODT = 1 and BG[1:0]2 = 3, BA[1:0] = 2 instead 14 56-59 repeat Sub-Loop 0, but ODT = 0 and BG[1:0]2 = 2, BA[1:0] = 3 instead 15 60-63 repeat Sub-Loop 0, but ODT = 1 and BG[1:0]2 = 3, BA[1:0] = 0 instead

• 47 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB [ Table 42 ] IDD4R, IDDR4RA, IDD4RB and IDDQ4R Measurement-Loop Pattern1 NOTE : 1. DQS_t, DQS_c are used according to RD Commands, otherwise VDDQ. 2. BG1 is don’t care for x16 device 3. C[2:0] are used only for 3DS device 4. Burst Sequence driven on each DQ signal by Read Command. CK_t, CK_c CKE Sub-Loop Cycle Number Command CS_n ACT_n RAS_n CAS_n/A15 WE_n/A14 ODT C[2:0]3 BG[1:0]2 BA[1:0] A12/BC_n A[13,11] A[10]/AP A[9:7] A[6:3] A[2:0] Data4 toggling Static High

0 RD 0110100 00 000 00 0

D0=00, D1=FF D2=FF, D3=00 D4=FF, D5=00 D6=00, D7=FF

1 D 1000000 00 000 00 0-

2,3 D#, D# 1 1 1 1 1 0 0 3 2 3 000 7F 0-

4 RD 0110100 11 000 7F 0

D0=FF, D1=00 D2=00, D3=FF D4=00, D5=FF D6=FF, D7=00

5 D 1000000 00 000 00 0-

6,7 D#, D# 1 1 1 1 1 0 0 3 2 3 000 7F 0- 2 8-11 repeat Sub-Loop 0, use BG[1:0]2 = 0, BA[1:0] = 2 instead 3 12-15 repeat Sub-Loop 1, use BG[1:0]2 = 1, BA[1:0] = 3 instead 4 16-19 repeat Sub-Loop 0, use BG[1:0]2 = 0, BA[1:0] = 1 instead 5 20-23 repeat Sub-Loop 1, use BG[1:0]2 = 1, BA[1:0] = 2 instead 6 24-27 repeat Sub-Loop 0, use BG[1:0]2 = 0, BA[1:0] = 3 instead 7 28-31 repeat Sub-Loop 1, use BG[1:0]2 = 1, BA[1:0] = 0 instead 8 32-35 repeat Sub-Loop 0, use BG[1:0]2 = 2, BA[1:0] = 0 instead For x4 and x8 only 9 36-39 repeat Sub-Loop 1, use BG[1:0]2 = 3, BA[1:0] = 1 instead 10 40-43 repeat Sub-Loop 0, use BG[1:0]2 = 2, BA[1:0] = 2 instead 11 44-47 repeat Sub-Loop 1, use BG[1:0]2 = 3, BA[1:0] = 3 instead 12 48-51 repeat Sub-Loop 0, use BG[1:0]2 = 2, BA[1:0] = 1 instead 13 52-55 repeat Sub-Loop 1, use BG[1:0]2 = 3, BA[1:0] = 2 instead 14 56-59 repeat Sub-Loop 0, use BG[1:0]2 = 2, BA[1:0] = 3 instead 15 60-63 repeat Sub-Loop 1, use BG[1:0]2 = 3, BA[1:0] = 0 instead

• 48 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB [ Table 43 ] IDD4W, IDD4WA, IDD4WB and IDD4W_par Measurement-Loop Pattern1 NOTE : 1. DQS_t, DQS_c are used according to WR Commands, otherwise VDDQ. 2. BG1 is don’t care for x16 device 3. C[2:0] are used only for 3DS device 4. Burst Sequence driven on each DQ signal by Write Command. CK_t, CK_c CKE Sub-Loop Cycle Number Command CS_n ACT_n RAS_n CAS_n/A15 WE_n/A14 ODT C[2:0]3 BG[1:0]2 BA[1:0] A12/BC_n A[13,11] A[10]/AP A[9:7] A[6:3] A[2:0] Data4 toggling Static High

0 WR 01101 10 00 000 00 0

D0=00, D1=FF D2=FF, D3=00 D4=FF, D5=00 D6=00, D7=FF

1 D 10000 10 00 000 00 0-

2,3 D#, D# 11111 10 3 2 3 000 7F 0-

4 WR 01101 10 11 000 7F 0

D0=FF, D1=00 D2=00, D3=FF D4=00, D5=FF D6=FF, D7=00

5 D 10000 10 00 000 00 0-

6,7 D#, D# 11111 10 3 2 3 000 7F 0- 2 8-11 repeat Sub-Loop 0, use BG[1:0]2 = 0, BA[1:0] = 2 instead 3 12-15 repeat Sub-Loop 1, use BG[1:0]2 = 1, BA[1:0] = 3 instead 4 16-19 repeat Sub-Loop 0, use BG[1:0]2 = 0, BA[1:0] = 1 instead 5 20-23 repeat Sub-Loop 1, use BG[1:0]2 = 1, BA[1:0] = 2 instead 6 24-27 repeat Sub-Loop 0, use BG[1:0]2 = 0, BA[1:0] = 3 instead 7 28-31 repeat Sub-Loop 1, use BG[1:0]2 = 1, BA[1:0] = 0 instead 8 32-35 repeat Sub-Loop 0, use BG[1:0]2 = 2, BA[1:0] = 0 instead For x4 and x8 only 9 36-39 repeat Sub-Loop 1, use BG[1:0]2 = 3, BA[1:0] = 1 instead 10 40-43 repeat Sub-Loop 0, use BG[1:0]2 = 2, BA[1:0] = 2 instead 11 44-47 repeat Sub-Loop 1, use BG[1:0]2 = 3, BA[1:0] = 3 instead 12 48-51 repeat Sub-Loop 0, use BG[1:0]2 = 2, BA[1:0] = 1 instead 13 52-55 repeat Sub-Loop 1, use BG[1:0]2 = 3, BA[1:0] = 2 instead 14 56-59 repeat Sub-Loop 0, use BG[1:0]2 = 2, BA[1:0] = 3 instead 15 60-63 repeat Sub-Loop 1, use BG[1:0]2 = 3, BA[1:0] = 0 instead

• 49 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB [ Table 44 ] IDD4WC Measurement-Loop Pattern1 NOTE : 1. DQS_t, DQS_c are VDDQ. 2. BG1 is don’t care for x16 device. 3. C[2:0] are used only for 3DS device. 4. Burst Sequence driven on each DQ signal by Write Command. CK_t, CK_c CKE Sub-Loop Cycle Number Command CS_n ACT_n RAS_n CAS_n/A15 WE_n/A14 ODT C[2:0]3 BG[1:0]2 BA[1:0] A12/BC_n A[13,11] A[10]/AP A[9:7] A[6:3] A[2:0] Data4 toggling Static High

0 WR 0110110 00 000 00 0

D0=00, D1=FF D2=FF, D3=00 D4=FF, D5=00 D6=00, D7=FF D8=CRC 1 , 2 D , D 1000010 00 000 00 0- 3,4 D#, D# 1111110 3 2 3 000 7F 0-

5 WR 0110110 11 000 7F 0

D0=FF, D1=00 D2=00, D3=FF D4=00, D5=FF D6=FF, D7=00 D8=CRC 6 , 7 D , D 1000010 00 000 00 0- 8,9 D#, D# 1111110 3 2 3 000 7F 0- 2 10-14 repeat Sub-Loop 0, use BG[1:0]2 = 0, BA[1:0] = 2 instead 3 15-19 repeat Sub-Loop 1, use BG[1:0]2 = 1, BA[1:0] = 3 instead 4 20-24 repeat Sub-Loop 0, use BG[1:0]2 = 0, BA[1:0] = 1 instead 5 25-29 repeat Sub-Loop 1, use BG[1:0]2 = 1, BA[1:0] = 2 instead 6 30-34 repeat Sub-Loop 0, use BG[1:0]2 = 0, BA[1:0] = 3 instead 7 35-39 repeat Sub-Loop 1, use BG[1:0]2 = 1, BA[1:0] = 0 instead 8 40-44 repeat Sub-Loop 0, use BG[1:0]2 = 2, BA[1:0] = 0 instead For x4 and x8 only 9 45-49 repeat Sub-Loop 1, use BG[1:0]2 = 3, BA[1:0] = 1 instead 10 50-54 repeat Sub-Loop 0, use BG[1:0]2 = 2, BA[1:0] = 2 instead 11 55-59 repeat Sub-Loop 1, use BG[1:0]2 = 3, BA[1:0] = 3 instead 12 60-64 repeat Sub-Loop 0, use BG[1:0]2 = 2, BA[1:0] = 1 instead 13 65-69 repeat Sub-Loop 1, use BG[1:0]2 = 3, BA[1:0] = 2 instead 14 70-74 repeat Sub-Loop 0, use BG[1:0]2 = 2, BA[1:0] = 3 instead 15 75-79 repeat Sub-Loop 1, use BG[1:0]2 = 3, BA[1:0] = 0 instead

• 50 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB [ Table 45 ] IDD5B Measurement-Loop Pattern1 NOTE : 1. DQS_t, DQS_c are VDDQ. 2. BG1 is don’t care for x16 device. 3. C[2:0] are used only for 3DS device. 4. DQ signals are VDDQ. CK_t, CK_c CKE Sub-Loop Cycle Number Command CS_n ACT_n RAS_n CAS_n/A15 WE_n/A14 ODT C[2:0]3 BG[1:0]2 BA[1:0] A12/BC_n A[13,11] A[10]/AP A[9:7] A[6:3] A[2:0] Data4 toggling Static High

00 REF 1000000 00 000 00 0-

2 D 1000000 00 000 00 0-

4 D#, D# 1111100 32 3 000 7F 0-

4-7 repeat pattern 1...4, use BG[1:0]2 = 1, BA[1:0] = 1 instead 8-11 repeat pattern 1...4, use BG[1:0]2 = 0, BA[1:0] = 2 instead 12-15 repeat pattern 1...4, use BG[1:0]2 = 1, BA[1:0] = 3 instead 16-19 repeat pattern 1...4, use BG[1:0]2 = 0, BA[1:0] = 1 instead 20-23 repeat pattern 1...4, use BG[1:0]2 = 1, BA[1:0] = 2 instead 24-27 repeat pattern 1...4, use BG[1:0]2 = 0, BA[1:0] = 3 instead 28-31 repeat pattern 1...4, use BG[1:0]2 = 1, BA[1:0] = 0 instead 32-35 repeat pattern 1...4, use BG[1:0]2 = 2, BA[1:0] = 0 instead For x4 and x8 only 36-39 repeat pattern 1...4, use BG[1:0]2 = 3, BA[1:0] = 1 instead 40-43 repeat pattern 1...4, use BG[1:0]2 = 2, BA[1:0] = 2 instead 44-47 repeat pattern 1...4, use BG[1:0]2 = 3, BA[1:0] = 3 instead 48-51 repeat pattern 1...4, use BG[1:0]2 = 2, BA[1:0] = 1 instead 52-55 repeat pattern 1...4, use BG[1:0]2 = 3, BA[1:0] = 2 instead 56-59 repeat pattern 1...4, use BG[1:0]2 = 2, BA[1:0] = 3 instead 60-63 repeat pattern 1...4, use BG[1:0]2 = 3, BA[1:0] = 0 instead 2 64 ... nRFC - 1 repeat Sub-Loop 1, Truncate, if necessary

• 51 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB [ Table 46 ] IDD7 Measurement-Loop Pattern1 NOTE : 1. DQS_t, DQS_c are VDDQ. 2. BG1 is don’t care for x16 device. 3. C[2:0] are used only for 3DS device. 4. Burst Sequence driven on each DQ signal by Read Command. Outside burst operation, DQ signals are VDDQ. CK_t, CK_c CKE Sub-Loop Cycle Number Command CS_n ACT_n RAS_n CAS_n/A15 WE_n/A14 ODT C[2:0]3 BG[1:0]2 BA[1:0] A12/BC_n A[13,11] A[10]/AP A[9:7] A[6:3] A[2:0] Data4 toggling Static High

0 ACT 0000000 00 000 00 0 -

1 RDA 011010 00 001 00 0

D0=00, D1=FF D2=FF, D3=00 D4=FF, D5=00 D6=00, D7=FF

3 D # 1111100 3

nRRD ACT 0000000 11 000 00 0 - nRRD + 1 RDA 011010 11 001 00 0 D0=FF, D1=00 D2=00, D3=FF D4=00, D5=FF D6=FF, D7=00 2 2*nRRD repeat Sub-Loop 0, use BG[1:0] 2 = 0, BA[1:0] = 2 instead 3 3*nRRD repeat Sub-Loop 1, use BG[1:0]2 = 1, BA[1:0] = 3 instead 4 4*nRRD repeat pattern 2 ... 3 until nFAW - 1, if nFAW > 4*nRRD. Truncate if necessary 5n F A W repeat Sub-Loop 0, use BG[1:0]2 = 0, BA[1:0] = 1 instead 6 nFAW + nRRD repeat Sub-Loop 1, use BG[1:0]2 = 1, BA[1:0] = 2 instead 7 nFAW + 2*nRRD repeat Sub-Loop 0, use BG[1:0]2 = 0, BA[1:0] = 3 instead 8 nFAW + 3*nRRD repeat Sub-Loop 1, use BG[1:0]2 = 1, BA[1:0] = 0 instead 9 nFAW + 4*nRRD repeat Sub-Loop 4 10 2*nFAW repeat Sub-Loop 0, use BG[1:0]2 = 2, BA[1:0] = 0 instead For x4 and x8 only 11 2*nFAW + nRRD repeat Sub-Loop 1, use BG[1:0]2 = 3, BA[1:0] = 1 instead 12 2*nFAW + 2*nRRD repeat Sub-Loop 0, use BG[1:0]2 = 2, BA[1:0] = 2 instead 13 2*nFAW + 3*nRRD repeat Sub-Loop 1, use BG[1:0]2 = 3, BA[1:0] = 3 instead 14 2*nFAW + 4*nRRD repeat Sub-Loop 4 15 3*nFAW repeat Sub-Loop 0, use BG[1:0]2 = 2, BA[1:0] = 1 instead 16 3*nFAW + nRRD repeat Sub-Loop 1, use BG[1:0]2 = 3, BA[1:0] = 2 instead 17 3*nFAW + 2*nRRD repeat Sub-Loop 0, use BG[1:0]2 = 2, BA[1:0] = 3 instead 18 3*nFAW + 3*nRRD repeat Sub-Loop 1, use BG[1:0]2 = 3, BA[1:0] = 0 instead 19 3*nFAW + 4*nRRD repeat Sub-Loop 4 20 4*nFAW repeat pattern 2 ... 3 until nRC - 1, if nRC > 4*nFAW. Truncate if necessary

• 52 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB 12.8Gb DDR4 SDRAM B-die IDD Specification Table IDD and IPP values are for typical operating range of voltage and temperature unless otherwise noted. [ Table 47 ] IDD and IDDQ Specification Symbol 512Mx16 (K4A8G165WB) Unit NOTE DDR4-2133 DDR4-2400 DDR4-2666 15-15-15 17-17-17 19-19-19 VDD 1.2V IDD Max. IDD Max. IDD Max. IDD0 41.9 42.6 TBD mA IDD0A 43.6 45.5 TBD mA IDD1 67 71.2 TBD mA IDD1A 69.4 74 TBD mA IDD2N 22 23 TBD mA IDD2NA 25 26 TBD mA IDD2NT 25 26 TBD mA IDD2NL 16 17 TBD mA IDD2NG 22 20.3 TBD mA IDD2ND 20 18 TBD mA IDD2N_par 23 24 TBD mA IDD2P 16 16 TBD mA IDD2Q 20 21 TBD mA IDD3N 36 36 TBD mA IDD3NA 38 38 TBD mA IDD3P 21 22 TBD mA IDD4R 162.7 190.4 TBD mA IDD4RA 166.2 177.4 TBD mA IDD4RB 161 173 TBD mA IDD4W 120.6 131.7 TBD mA IDD4WA 124.6 135.7 TBD mA IDD4WB 120.9 132.1 TBD mA IDD4WC 110.3 120.5 TBD mA IDD4W_par 128.1 144.9 TBD mA IDD5B 219.5 216.4 TBD mA IDD5F2 154.7 151.7 TBD mA IDD5F4 128.5 128.4 TBD mA IDD6N 23 23 TBD mA IDD6E 34 34 TBD mA IDD6R 16 16 TBD mA IDD6A 22 22 TBD mA IDD7 212.2 224 TBD mA IDD8 11 11 TBD mA

• 53 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB [ Table 48 ] IPP Specification [ Table 49 ] IDD6 Specification NOTE : 1. Some IDD currents are higher for x16 organization due to larger page-size architecture. 2. Max. values for IDD currents considering worst case conditions of process, temperature and voltage. 3. Applicable for MR2 settings A6=0 and A7=0. 4. Supplier data sheets include a max value for IDD6. 5. Applicable for MR2 settings A6=0 and A7=1. IDD6ET is only specified for devices which support the Extended Temperature Range feature. Symbol 512Mx16 (K4A8G165WB) Unit NOTE DDR4-2133 DDR4-2400 DDR4-2666 15-15-15 17-17-17 19-19-19 VPP 2.5V IPP Max. IPP Max. IPP Max. IPP0 4 4 TBD mA IPP1 4 4 TBD mA IPP2N 3 3 TBD mA IPP2P 3 3 TBD mA IPP3N 3 3 TBD mA IPP3P 3 3 TBD mA IPP4R 3 3 TBD mA IPP4W 3 3 TBD mA IPP5B 18 18 TBD mA IPP5F2 15 15 TBD mA IPP5F4 14 14 TBD mA IPP6N 4 4 TBD mA IPP6E 5 5 TBD mA IPP6R 3.5 3.5 TBD mA IPP6A 4 4 TBD mA IPP7 8 8.5 TBD mA IPP8 3 3 TBD mA Symbol Temperature Range Value Unit NOTE 512Mx16 (K4A8G165WB) DDR4-2133 DDR4-2400 DDR4-2666 15-15-15 17-17-17 19-19-19 VDD 1.2V IDD6N 0 - 85 oC 23 23 TBD mA 3,4 IDD6E 0 - 95 oC 34 34 TBD mA 4,5

• 54 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB 13. Input/Output Capacitance [ Table 50 ] Silicon pad I/O Capacitance NOTE: 1. This parameter is not subject to production test. It is verified by design and characterization. The silicon only capacitance is validated by de-embedding the package L & C parasitic. The capacitance is measured with VDD, VDDQ, VSS, VSSQ applied with all other signal pins floating. Measurement procedure tbd. 2. DQ, DM_n, DQS_T, DQS_C, TDQS_T, TDQS_C. Although the DM, TDQS_T and TDQS_C pins have different functions, the loading matches DQ and DQS 3. This parameter applies to monolithic devices only; stacked/dual-die devices are not covered here 4. Absolute value CK_T-CK_C 5. Absolute value of CIO(DQS_T)-CIO(DQS_C) 6. CI applies to ODT, CS_n, CKE, A0-A15, BA0-BA1, BG0-BG1, RAS_n, CAS_n/A15, WE_n/A14, ACT_n and PAR. 7. CDI CTRL applies to ODT, CS_n and CKE 8. CDI_CTRL = CI(CTRL)-0.5*(CI(CLK_T)+CI(CLK_C)) 9. CDI_ADD_ CMD applies to, A0-A15, BA0-BA1, BG0-BG1,RAS_n, CAS_n/A15, WE_n/A14, ACT_n and PAR. 10. CDI_ADD_CMD = CI(ADD_CMD)-0.5*(CI(CLK_T)+CI(CLK_C)) 11. CDIO = CIO(DQ,DM)-0.5*(CIO(DQS_T)+CIO(DQS_C)) 12. Maximum external load capacitance on ZQ pin: tbd pF. 13.TEN pin may be DRAM internally pulled low through a weak pull-down resistor to VSS. In this case C TEN might not be valid and system shall verify TEN signal with Vendor specific information. Symbol Parameter DDR4-1600/1866/2133 DDR4-2400/2666 Unit NOTE min max min max CIO Input/output capacitance 0.55 1.4 0.55 1.15 pF 1,2,3 CDIO Input/output capacitance delta -0.1 0.1 -0.1 0.1 pF 1,2,3,11 CDDQS Input/output capacitance delta DQS_t and CCK Input capacitance, CK_t and CK_c 0.2 0.8 0.2 0.7 pF 1,3 CDCK Input capacitance delta CK_t and CK_c - 0.05 - 0.05 pF 1,3,4 CI Input capacitance(CTRL, ADD, CMD pins only) 0.2 0.8 0.2 0.7 pF 1,3,6 CDI_ CTRL Input capacitance delta(All CTRL pins only) -0.1 0.1 -0.1 0.1 pF 1,3,7,8 CDI_ ADD_CMD Input capacitance delta(All ADD/CMD pins CALERT Input/output capacitance of ALERT 0.5 1.5 0.5 1.5 pF 1,3 CZQ Input/output capacitance of ZQ 0.5 2.3 0.5 2.3 pF 1,3,12 CTEN Input capacitance of TEN 0.2 2.3 0.2 2.3 pF 1,3,13

• 55 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB [ Table 51 ] DRAM package electrical specifications(X16) NOTE : 1. Package implementations shall meet spec if the Zpkg and Pkg Delay fall within the ranges shown, and the maximum Lpkg and Cpkg do not exceed the maximum value shown 2. It is assumed that Lpkg can be approximated as Lpkg = Zo*Td 3. It is assumed that Cpkg can be approximated as Cpkg = Td/Zo Symbol Parameter DDR4-1600/1866/2133/2400/2666 Unit NOTE min max ZIO Input/output Zpkg 45 85  1 TdIO Input/output Pkg Delay 14 45 ps 1 Lio Input/Output Lpkg - 3.4 nH 1, 2 Cio Input/Output Cpkg - 0.82 pF 1, 3 ZIO DQS DQS_t, DQS_c Zpkg 45 85  1 TdIO DQS DQS_t, DQS_c Pkg Delay 14 45 ps 1 Lio DQS DQS Lpkg - 3.4 nH 1, 2 Cio DQS DQS Cpkg - 0.82 pF 1, 3 DZDIO DQS Delta Zpkg DQSU_t, DQSU_c - 10  - Delta Zpkg DQSL_t, DQSL_c - 10  - DTdDIO DQS Delta Delay DQSU_t, DQSU_c - 5 ps - Delta Delay DQSL_t, DQSL_c - 5 ps - ZI CTRL Input CTRL pins Zpkg 50 90  1 TdI_ CTRL Input CTRL pins Pkg Delay 14 42 ps 1 Li CTRL Input CTRL Lpkg - 3.4 nH 1, 2 Ci CTRL Input CTRL Cpkg - 0.7 pF 1, 3 ZIADD CMD Input- CMD ADD pins Zpkg 50 90  1 TdIADD_ CMD Input- CMD ADD pins Pkg Delay 14 52 ps 1 Li ADD CMD Input CMD ADD Lpkg - 3.9 nH 1, 2 Ci ADD CMD Input CMD ADD Cpkg - 0.86 pF 1, 3 ZCK CLK_c Zpkg 50 90  1 TdCK CLK_c Pkg Delay 14 42 ps 1 Li CLK Input CLK Lpkg - 3.4 nH 1, 2 Ci CLK Input CLK Cpkg - 0.7 pF 1, 3 DZDCK Delta Zpkg CLK_c - 10  - DTdCK Delta Delay CLK_c - 5 ps - ZOZQ ZQ Zpkg 36 100  - TdO ZQ ZQ Delay 20 90 ps - ZO ALERT ALERT Zpkg 40 100  - TdO ALERT ALERT Delay 20 55 ps -

1. Electrical Characteristics & AC Timing

14.1 Reference Load for AC Timing and Output Slew Rate

It is not intended as a precise representation of any particular system environment or a depiction of the actual load presented by a production tester. their production test conditions, generally one or more coaxial transmission lines terminated at the tester electronics. Figure 23. Reference Load for AC Timing and Output Slew Rate Average periodic Refresh interval (tREFI) of DDR4 SDRAM is defined as shown in the table.

1. Users should refer to the DRAM supplier data sheet and/or the DIMM SPD to determine if DDR4 SDRAM devices support the following options or requirements referred to in
2. Supported only for Industrial Temperature

50 Ohm

• 57 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB

14.3 Timing Parameters by Speed Grade

[ Table 53 ] Timing Parameters by Speed Bin for DDR4-1600 to DDR4-2666 Speed DDR4-1600 DDR4-1866 DDR4-2133 DDR4-2400 DDR4-2666 Units NOTE Parameter Symbol MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX Clock Timing Minimum Clock Cycle Time (DLL off mode) tCK (DLL_OFF) 8 20 8 20 8 20 8 20 8 20 ns - Absolute Clock Period tCK(abs) tCK(avg)min + tJIT(per)min_tot tCK(avg)m ax + tJIT(per)max_tot tCK(avg) Clock Period Jitter- total JIT(per)_tot -63 63 -54 54 -47 47 -42 42 -38 38 ps 23 Clock Period Jitter- deterministic JIT(per)_dj -31 31 -27 27 -23 23 -21 21 -19 19 ps 26 Clock Period Jitter during DLL locking peri- od tJIT(per, lck) -50 50 -43 43 -38 38 -33 33 -30 30 ps Cycle to Cycle Period Jitter tJIT(cc)_total - 125 - 107 - 94 - 83 - 75 ps 25 Cycle to Cycle Period Jitter deterministic tJIT(cc)_dj - 63 - 54 - 47 - 42 - 38 ps 26 Cycle to Cycle Period Jitter during DLL locking period tJIT(cc, lck) - 100 - 86 - 75 - 67 - 60 ps Duty Cycle Jitter tJIT(duty) TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD ps Cumulative error across 2 cycles tERR(2per) -92 92 -79 79 -69 69 -61 61 -55 55 ps Cumulative error across 3 cycles tERR(3per) -109 109 -94 94 -82 82 -73 73 -66 66 ps Cumulative error across 4 cycles tERR(4per) -121 121 -104 104 -91 91 -81 81 -73 73 ps Cumulative error across 5 cycles tERR(5per) -131 131 -112 112 -98 98 -87 87 -78 78 ps Cumulative error across 6 cycles tERR(6per) -139 139 -119 119 -104 104 -92 92 -83 83 ps Cumulative error across 7 cycles tERR(7per) -145 145 -124 124 -109 109 -97 97 -87 87 ps Cumulative error across 8 cycles tERR(8per) -151 151 -129 129 -113 113 -101 101 -91 91 ps Cumulative error across 9 cycles tERR(9per) -156 156 -134 134 -117 117 -104 104 -94 94 ps Cumulative error across 10 cycles tERR(10per) -160 160 -137 137 -120 120 -107 107 -96 96 ps Cumulative error across 11 cycles tERR(11per) -164 164 -141 141 -123 123 -110 110 -99 99 ps Cumulative error across 12 cycles tERR(12per) -168 168 -144 144 -126 126 -112 112 -101 101 ps Cumulative error across 13 cycles tERR(13per) -172 172 -147 147 -129 129 -114 114 -103 103 ps Cumulative error across 14 cycles tERR(14per) -175 175 -150 150 -131 131 -116 116 -104 104 ps Cumulative error across 15 cycles tERR(15per) -178 178 -152 152 -133 133 -118 118 -106 106 ps Cumulative error across 16 cycles tERR(16per) -180 189 -155 155 -135 135 -120 120 -108 108 ps Cumulative error across 17 cycles tERR(17per) -183 183 -157 157 -137 137 -122 122 -110 110 ps Cumulative error across 18 cycles tERR(18per) -185 185 -159 159 -139 139 -124 124 -112 112 ps Cumulative error across n = 13, 14 . . . 49, 50 cycles tERR(nper) tERR(nper)min = ((1 + 0.68ln(n)) * tJIT(per)_total min) tERR(nper)max = ((1 + 0.68ln(n)) * tJIT(per)_total max) ps Command and Address setup time to CK_t, CK_c referenced to Vih(ac) / Vil(ac) levels tIS(base) 115 - 100 - 80 - 62 - TBD - ps Command and Address setup time to CK_t, CK_c referenced to Vref levels tIS(Vref) 215 - 200 - 180 - 162 - TBD - ps Command and Address hold time to CK_t, CK_c referenced to Vih(dc) / Vil(dc) levels tIH(base) 140 - 125 - 105 - 87 - TBD - ps Command and Address hold time to CK_t, CK_c referenced to Vref levels tIH(Vref) 215 - 200 - 180 - 162 - TBD - ps Control and Address Input pulse width for each input tIPW 600 - 525 - 460 - 410 - 385 - ps Command and Address Timing CAS_n to CAS_n command delay for same bank group tCCD_L max(5 nCK, 6.250 ns) max(5 nCK, 5.355 ns) max(5 nCK, 5.625 ns) max(5 nCK, 5 ns) max(5 nCK, 5 ns) - nCK 34 CAS_n to CAS_n command delay for differ- ent bank group tCCD_S 4 - 4 - 4 - 4 - 4 - nCK 34 ACTIVATE to ACTIVATE Command delay to different bank group for 2KB page size tRRD_S(2K) Max(4nC K,6ns) - Max(4nC K,5.3ns) - Max(4nC K,5.3ns) - Max(4nC K,5.3ns) - Max(4nC K,5.3ns) - nCK 34 ACTIVATE to ACTIVATE Command delay to different bank group for 2KB page size tRRD_S(1K) Max(4nC K,5ns) Max(4nC K,4.2ns) Max(4nC K,3.7ns) Max(4nC K,3.3ns) - Max(4nC K,3ns) - nCK 34

• 58 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB ACTIVATE to ACTIVATE Command delay to different bank group for 1/2KB page size tRRD_S(1/2K) Max(4nC K,5ns) Max(4nC K,4.2ns) Max(4nC K,3.7ns) Max(4nC K,3.3ns) - Max(4nC K,3ns) - nCK 34 ACTIVATE to ACTIVATE Command delay to same bank group for 2KB page size tRRD_L(2K) Max(4nC K,7.5ns) Max(4nC K,6.4ns) Max(4nC K,6.4ns) Max(4nC K,6.4ns) - Max(4nC K,6.4ns) - nCK 34 ACTIVATE to ACTIVATE Command delay to same bank group for 1KB page size tRRD_L(1K) Max(4nC K,6ns) Max(4nC K,5.3ns) Max(4nC K,5.3ns) Max(4nC K,4.9ns) - Max(4nC K,4.9ns) - nCK 34 ACTIVATE to ACTIVATE Command delay to same bank group for 1/2KB page size tRRD_L(1/2K) Max(4nC K,6ns) Max(4nC K,5.3ns) Max(4nC K,5.3ns) Max(4nC K,4.9ns) - Max(4nC K,4.9ns) - nCK 34 Four activate window for 2KB page size tFAW_2K Max(28n CK,35ns) Max(28n CK,30ns) Max(28n CK,30ns) Max(28n CK,30ns) - Max(28n CK,30ns) -n s 3 4 Four activate window for 1KB page size tFAW_1K Max(20n CK,25ns) Max(20n CK,23ns) Max(20n CK,21ns) Max(20n CK,21ns) - Max(20n CK,21ns) -n s 3 4 Four activate window for 1/2KB page size tFAW_1/2K Max(16n CK,20ns) Max(16n CK,17ns) Max(16n CK,15ns) Max(16n CK,13ns) - Max(16n CK,12ns) -n s 3 4 Delay from start of internal write transaction to internal read command for different bank group tWTR_S max(2nC K,2.5ns) - max(2nC K,2.5ns) - max(2nC K,2.5ns) - max (2nCK, 2.5ns) max (2nCK, 2.5ns) -n s 1,2,e,3 Delay from start of internal write transaction to internal read command for same bank group tWTR_L max(4nC K,7.5ns) - max(4nC K,7.5ns) - max(4nC K,7.5ns) - max (4nCK,7. 5ns) max (4nCK,7. 5ns) - ns 1,34 Internal READ Command to PRECHARGE Command delay tRTP max(4nC K,7.5ns) - max(4nC K,7.5ns) - max(4nC K,7.5ns) - max (4nCK,7. 5ns) max (4nCK,7. 5ns) -n s 3 4 WRITE recovery time tWR 15 - 15 - 15 - 15 - 15 - ns 1 Write recovery time when CRC and DM are enabled tWR_CRC _DM tWR+max (4nCK,3.7 5ns) tWR+max (5nCK,3. 75ns) tWR+max (5nCK,3. 75ns) tWR+max (5nCK,3. 75ns) tWR+max (5nCK,3. 75ns) - ns 1, 28 delay from start of internal write transaction to internal read command for different bank group with both CRC and DM enabled tWTR_S_C RC_DM tWTR_S+ max (4nCK,3.7 5ns) tWTR_S+ max (5nCK,3. 75ns) tWTR_S+ max (5nCK,3. 75ns) tWTR_S+ max (5nCK,3. 75ns) tWTR_S+ max (5nCK,3. 75ns) -n s 2, 29, delay from start of internal write transaction to internal read command for same bank group with both CRC and DM enabled tWTR_L_C RC_DM tWTR_L+ max (4nCK,3.7 5ns) tWTR_L+ max (5nCK,3. 75ns) tWTR_L+ max (5nCK,3. 75ns) tWTR_L+ max (5nCK,3. 75ns) tWTR_L+ max (5nCK,3. 75ns) -n s 3,30, DLL locking time tDLLK 597 - 597 - 768 - 768 - 854 - nCK Mode Register Set command cycle time tMRD 8 - 8 - 8 - 8 - 8 - nCK Mode Register Set command update delay tMOD max(24n CK,15ns) - max(24n CK,15ns) - max(24n CK,15ns) - max(24n CK,15ns) - max(24n CK,15ns) - nCK Multi-Purpose Register Recovery Time tMPRR 1 - 1 - 1 - 1 - 1 - nCK 33 Multi Purpose Register Write Recovery Time tWR_MPR tMOD (min) + AL + PL tMOD (min) + AL + PL tMOD (min) + AL + PL tMOD (min) + AL + PL tMOD (min) + AL + PL - nCK Auto precharge write recovery + precharge time tDAL(min) Programmed WR + roundup ( tRP / tCK(avg)) nCK DQ0 or DQL0 driven to 0 set-up time to first DQ0 or DQL0 driven to 0 hold time from last CS_n to Command Address Latency CS_n to Command Address Latency tCAL 3 - 4 - 4 - max(3 nCK, 3.748 ns) max(3 nCK, 3.748 ns) - nCK Mode Register Set cyce time in CAL mode tMRD_tCAL tMOD+ tCAL - tMOD+ tCAL - nCK Mode Register Set update delay in CAL mode tMOD_tCAL tMOD+ tCAL - tMOD+ tCAL - nCK DRAM Data Timing DQS_t,DQS_c to DQ skew, per group, per 13,18,3 9,49 DQ output hold per group, per access from 13,17,1 8,39,49 Data Valid Window per device: (tQH - tD- QSQ) of each UI on a given DRAM tDVWd 0.63 - 0.63 - 0.64 - 0.64 - TBD - UI 17,18,3 9,49 Data Valid Window , per pin per UI : (tQH - tDQSQ) each UI on a pin of a given DRAM 9,49 DQ low impedance time from CK_t, CK_c tLZ(DQ) -450 225 -390 195 -390 180 -330 175 -310 170 ps 39 DQ high impedance time from CK_t, CK_c tHZ(DQ) - 225 - 195 - 180 - 175 - 170 ps 39 Data Strobe Timing Speed DDR4-1600 DDR4-1866 DDR4-2133 DDR4-2400 DDR4-2666 Units NOTE Parameter Symbol MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX

• 59 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB DQS_t, DQS_c differential READ Preamble tRPRE 0.9 NOTE44 0.9 NOTE44 0.9 NOTE4 4 0.9 NOTE 44 0.9 NOTE 44 tCK 39,40 NA NA NA NA NA NA 1.8 NOTE 44 1.8 NOTE 44 tCK 39,41 DQS_t, DQS_c differential READ Postam- ble tRPST 0.33 NOTE 45 0.33 NOTE 45 0.33 NOTE 45 0.33 NOTE 45 0.33 NOTE 45 tCK 39 DQS_t, DQS_c differential WRITE Pream- ble tWPRE NA NA NA 1.8 - 1.8 - tCK 43 DQS_t, DQS_c differential WRITE Postam- DQS_t and DQS_c low-impedance time (Referenced from RL-1) tLZ(DQS) -450 225 -390 195 -360 180 -330 175 -310 170 ps 39 DQS_t and DQS_c high-impedance time (Referenced from RL+BL/2) tHZ(DQS) - 225 - 195 - 180 - 175 - 170 ps 39 DQS_t, DQS_c differential input low pulse DQS_t, DQS_c differential input high pulse DQS_t, DQS_c rising edge to CK_t, CK_c DQS_t, DQS_c falling edge setup time to DQS_t, DQS_c falling edge hold time from DQS_t, DQS_c rising edge output timing lo- catino from rising CK_t, CK_c with DLL On mode tDQSCK (DLL On) -225 225 -195 195 -180 180 -175 175 -170 170 ps 37,38,3 DQS_t, DQS_c rising edge output variance window per DRAM tDQSCKI (DLL On) - 370 - 330 - 310 - 290 - 270 ps 37,38,3 MPSM Timing Command path disable delay upon MPSM entry tMPED tMOD(mi n) + tCP- DED(min) tMOD(mi n) + tCP- DED(min) tMOD(mi n) + tCP- DED(min) tMOD(mi n) + tCP- DED(min) - TBD - Valid clock requirement after MPSM entry tCKMPE tMOD(mi n) + tCP- DED(min) tMOD(mi n) + tCP- DED(min) tMOD(mi n) + tCP- DED(min) tMOD(mi n) + tCP- DED(min) - TBD - Valid clock requirement before MPSM exit tCKMPX tCKSRX( min) - tCKSRX( min) - tCKSRX( min) - tCKSRX( min) - TBD - Exit MPSM to commands not requiring a locked DLL tXMP tXS(min) - tXS(min) - tXS(min) - tXS(min) - TBD - Exit MPSM to commands requiring a locked DLL tXMPDLL tXMP(min ) + tXS- DLL(min) tXMP(min ) + tXS- DLL(min) tXMP(min ) + tXS- DLL(min) tXMP(min ) + tXS- DLL(min) - TBD - CS setup time to CKE tMPX_S tIS(min) + tIHL(min) - tIS(min) + tIHL(min) - tIS(min) + tIHL(min) - tIS(min) + tIHL(min) - TBD - Calibration Timing Power-up and RESET calibration time tZQinit 1024 - 1024 - 1024 - 1024 - 1024 - nCK Normal operation Full calibration time tZQoper 512 - 512 - 512 - 512 - 512 - nCK Normal operation Short calibration time tZQCS 128 - 128 - 128 - 128 - 128 - nCK Reset/Self Refresh Timing Exit Reset from CKE HIGH to a valid com- mand tXPR max (5nCK,tR FC(min)+ 10ns) max (5nCK,tR FC(min)+ 10ns) max (5nCK,tR FC(min)+ 10ns) max (5nCK,tR FC(min)+ 10ns) max (5nCK,tR FC(min)+ 10ns) - nCK Exit Self Refresh to commands not requir- ing a locked DLL tXS tRFC(min )+10ns - tRFC(min )+10ns - tRFC(min )+10ns - tRFC(min )+10ns - tRFC(min )+10ns - nCK SRX to commands not requiring a locked DLL in Self Refresh ABORT tX- S_ABORT(min tRFC4(mi n)+10ns - tRFC4(mi n)+10ns - tRFC4(mi n)+10ns - tRFC4(mi n)+10ns - tRFC4(mi n)+10ns - nCK Exit Self Refresh to ZQCL,ZQCS and MRS (CL,CWL,WR,RTP and Gear Down) tXS_FAST (min) tRFC4(mi n)+10ns - tRFC4(mi n)+10ns - tRFC4(mi n)+10ns - tRFC4(mi n)+10ns - tRFC4(mi n)+10ns - nCK Exit Self Refresh to commands requiring a locked DLL tXSDLL tDLLK(mi n) - tDLLK(mi n) - tDLLK(mi n) - tDLLK(mi n) - tDLLK(mi n) - nCK Minimum CKE low width for Self refresh en- try to exit timing tCKESR tCKE(min )+1nCK - tCKE(min )+1nCK - tCKE(min )+1nCK - tCKE(min )+1nCK - tCKE(min )+1nCK - nCK Speed DDR4-1600 DDR4-1866 DDR4-2133 DDR4-2400 DDR4-2666 Units NOTE Parameter Symbol MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX

• 60 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB Minimum CKE low width for Self refresh en- try to exit timing with CA Parity enabled tCKESR_ PAR tCKE(min 1nCK+PL tCKE(min 1nCK+PL tCKE(min 1nCK+PL tCKE(min 1nCK+PL tCKE(min 1nCK+PL - nCK Valid Clock Requirement after Self Refresh Entry (SRE) or Power-Down Entry (PDE) tCKSRE max(5nC K,10ns) - max(5nC K,10ns) - max(5nC K,10ns) - max (5nCK,10 ns) max (5nCK,10 ns) - nCK Valid Clock Requirement after Self Refresh Entry (SRE) or Power-Down when CA Par- ity is enabled tCKSRE_PAR max (5nCK,10 ns)+PL max (5nCK,10 ns)+PL max (5nCK,10 ns)+PL max (5nCK,10 ns)+PL max (5nCK,10 ns)+PL - nCK Valid Clock Requirement before Self Re- fresh Exit (SRX) or Power-Down Exit (PDX) or Reset Exit tCKSRX max(5nC K,10ns) - max(5nC K,10ns) - max(5nC K,10ns) - max (5nCK,10 ns) max (5nCK,10 ns) - nCK Power Down Timing Exit Power Down with DLL on to any valid command;Exit Precharge Power Down with DLL frozen to commands not requiring a locked DLL tXP max (4nCK,6n max (4nCK,6n max (4nCK,6n max (4nCK,6n max (4nCK,6n - nCK CKE minimum pulse width tCKE max (3nCK, 5ns) max (3nCK, 5ns) max (3nCK, 5ns) max (3nCK, 5ns) max (3nCK, 5ns) - nCK 31,32 Command pass disable delay tCPDED 4 - 4 - 4 - 4 - 4 - nCK Power Down Entry to Exit Timing tPD tCKE(min ) 9*tREFI tCKE(min ) 9*tREFI tCKE(min ) 9*tREFI tCKE(min ) 9*tREFI tCKE(min ) 9*tREFI nCK 6 Timing of ACT command to Power Down entry tACTPDEN 1 - 1 - 2 - 2 - 2 - nCK 7 Timing of PRE or PREA command to Power Down entry tPRPDEN 1 - 1 - 2 - 2 - 2 - nCK 7 Timing of RD/RDA command to Power Down entry tRDPDEN RL+4+1 - RL+4+1 - RL+4+1 - RL+4+1 - RL+4+1 - nCK Timing of WR command to Power Down entry (BL8OTF, BL8MRS, BC4OTF) tWRPDEN WL+4+(t WR/ tCK(avg)) WL+4+(t WR/ tCK(avg)) WL+4+(t WR/ tCK(avg)) WL+4+(t WR/ tCK(avg)) WL+4+(t WR/ tCK(avg)) - nCK 4 Timing of WRA command to Power Down entry (BL8OTF, BL8MRS, BC4OTF) tWRAPDEN WL+4+W R+1 - WL+4+W R+1 - WL+4+W R+1 - WL+4+W R+1 - WL+4+W R+1 - nCK 5 Timing of WR command to Power Down entry (BC4MRS) tWRP- BC4DEN WL+2+(t WR/ tCK(avg)) WL+2+(t WR/ tCK(avg)) WL+2+(t WR/ tCK(avg)) WL+2+(t WR/ tCK(avg)) WL+2+(t WR/ tCK(avg)) - nCK 4 Timing of WRA command to Power Down entry (BC4MRS) tWRAP- BC4DEN WL+2+W R+1 - WL+2+W R+1 - WL+2+W R+1 - WL+2+W R+1 - WL+2+W R+1 - nCK 5 Timing of REF command to Power Down entry tREFPDEN 1 - 1 - 2 - 2 - 2 - nCK 7 Timing of MRS command to Power Down entry tMRSPDEN tMOD(mi n) - tMOD(mi n) - tMOD(mi n) - tMOD(mi n) - tMOD(mi n) - nCK PDA Timing Mode Register Set command cycle time in PDA mode tMRD_PDA max(16n CK,10ns) - max(16n CK,10ns) - max(16n CK,10ns) - max(16n CK,10ns) - max(16n CK,10ns) - nCK Mode Register Set command update delay in PDA mode tMOD_PDA tMOD tMOD tMOD tMOD tMOD nCK ODT Timing Asynchronous RTT turn-on delay (Power- Asynchronous RTT turn-off delay (Power- Write Leveling Timing First DQS_t/DQS_n rising edge after write leveling mode is programmed tWLMRD 40 - 40 - 40 - 40 - 40 - nCK 12 DQS_t/DQS_n delay after write leveling mode is programmed tWLDQSEN 25 - 25 - 25 - 25 - 25 - nCK 12 Write leveling setup time from rising CK_t, CK_c crossing to rising DQS_t/DQS_n crossing Write leveling hold time from rising DQS_t/ DQS_n crossing to rising CK_t, CK_ cross- ing Write leveling output error tWLOE 0 2 0 2 0 20202 n s CA Parity Timing Commands not guaranteed to be executed during this time tPAR_UN- KNOWN - PL - PL - PL - PL - PL nCK Speed DDR4-1600 DDR4-1866 DDR4-2133 DDR4-2400 DDR4-2666 Units NOTE Parameter Symbol MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX

• 61 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB Delay from errant command to ALERT_n assertion tPAR_ALERT_ ON - PL+6ns - PL+6ns - PL+6ns - PL+6ns - PL+6ns nCK Pulse width of ALERT_n signal when as- serted tPAR_ALERT_ PW 48 96 56 112 64 128 72 144 80 160 nCK Time from when Alert is asserted till control- ler must start providing DES commands in Persistent CA parity mode tPAR_ALERT _RSP - 43 - 50 - 57 - 64 - 71 nCK Parity Latency PL 4 4 4 5 5 nCK CRC Error Reporting CRC error to ALERT_n latency tCRC_ALERT 3 13 3 13 3 13 3 13 3 13 ns CRC ALERT_n pulse width CRC_ALERT_ PW 6 10 6 10 6 10 6 10 6 10 nCK Geardown timing Exit RESET from CKE HIGH to a valid MRS geardown (T2/Reset) tXPR_GEAR - - - - - - - - TBD CKE High Assert to Gear Down Enable time(T2/CKE) tXS_GEAR - - - - - - - - TBD MRS command to Sync pulse time(T3) tSYNC_GEA Sync pulse to First valid command(T4) tCMD_GEAR - - - - - - - - TBD 27 Geardown setup time tGEAR_setup - - - - - - - - 2 - nCK Geardown hold time tGEAR_hold - - - - - - - - 2 - nCK tREFI tRFC1 (min) 2Gb 160 - 160 - 160 - 160 - 160 -n s 3 4 4Gb 260 - 260 - 260 - 260 - 260 -n s 3 4 8Gb 350 - 350 - 350 - 350 - 350 -n s 3 4 16Gb TBD - TBD - TBD - 550 - 550 -n s 3 4 tRFC2 (min) 2Gb 110 - 110 - 110 - 110 - 110 -n s 3 4 4Gb 160 - 160 - 160 - 160 - 160 -n s 3 4 8Gb 260 - 260 - 260 - 260 - 260 -n s 3 4 16Gb TBD - TBD - TBD - 350 - 350 -n s 3 4 tRFC4 (min) 2Gb 90 - 90 - 90 - 90 - 90 -n s 3 4 4Gb 110 - 110 - 110 - 110 - 110 -n s 3 4 8Gb 160 - 160 - 160 - 160 - 160 -n s 3 4 16Gb TBD - TBD - TBD - 260 - 260 - ns 34 Speed DDR4-1600 DDR4-1866 DDR4-2133 DDR4-2400 DDR4-2666 Units NOTE Parameter Symbol MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX

• 62 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB NOTE : 1. Start of internal write transaction is defined as follows : For BL8 (Fixed by MRS and on-the-fly) : Rising clock edge 4 clock cycles after WL. For BC4 (on-the-fly) : Rising clock edge 4 clock cycles after WL. For BC4 (fixed by MRS) : Rising clock edge 2 clock cycles after WL. 2. A separate timing parameter will cover the delay from write to read when CRC and DM are simultaneously enabled 3. Commands requiring a locked DLL are: READ (and RAP) and synchronous ODT commands. 4. tWR is defined in ns, for calculation of tWRPDEN it is necessary to round up tWR/tCK to the next integer. 5. WR in clock cycles as programmed in MR0. 6. tREFI depends on TOPER. 7. CKE is allowed to be registered low while operations such as row activation, precharge, autoprecharge or refresh are in progress, but power-down IDD spec will not be applied until finishing those operations. 8. For these parameters, the DDR4 SDRAM device supports tnPARAM[nCK]=RU{tPARAM[ns]/tCK(avg)[ns]}, which is in clock cycles assuming all input clock jitter specifications are satisfied 9. When CRC and DM are both enabled, tWR_CRC_DM is used in place of tWR. 10. When CRC and DM are both enabled tWTR_S_CRC_DM is used in place of tWTR_S. 11. When CRC and DM are both enabled tWTR_L_CRC_DM is used in place of tWTR_L. 12. The max values are system dependent. 13. DQ to DQS total timing per group where the total includes the sum of deterministic and random timing terms for a specified BER. BER spec and measurement method are tbd. 14. The deterministic component of the total timing. Measurement method tbd. 15. DQ to DQ static offset relative to strobe per group. Measurement method tbd. 16. This parameter will be characterized and guaranteed by design. 17U When the device is operated with the input clock jitter, this parameter needs to be derated by the actual tjit(per)_total of the input clock. (output deratings are relative to the SDRAM input clock). Example tbd. 18. DRAM DBI mode is off. 19. DRAM DBI mode is enabled. Applicable to x8 and x16 DRAM only. 20. tQSL describes the instantaneous differential output low pulse width on DQS_t - DQS_c, as measured from on falling edge to the next consecutive rising edge 21. tQSH describes the instantaneous differential output high pulse width on DQS_t - DQS_c, as measured from on falling edge to the next consecutive rising edge 22. There is no maximum cycle time limit besides the need to satisfy the refresh interval tREFI 23. tCH(abs) is the absolute instantaneous clock high pulse width, as measured from one rising edge to the following falling edge 24. tCL(abs) is the absolute instantaneous clock low pulse width, as measured from one falling edge to the following rising edge 25. Total jitter includes the sum of deterministic and random jitter terms for a specified BER. BER target and measurement method are tbd. 26. The deterministic jitter component out of the total jitter. This parameter is characterized and gauranteed by design. 27. This parameter has to be even number of clocks 28. When CRC and DM are both enabled, tWR_CRC_DM is used in place of tWR. 29. When CRC and DM are both enabled tWTR_S_CRC_DM is used in place of tWTR_S. 30. When CRC and DM are both enabled tWTR_L_CRC_DM is used in place of tWTR_L. 31. After CKE is registered LOW, CKE signal level shall be maintained below VILDC for tCKE specification ( Low pulse width ). 32. After CKE is registered HIGH, CKE signal level shall be maintained above VIHDC for tCKE specification ( HIGH pulse width ). 33. Defined between end of MPR read burst and MRS which reloads MPR or disables MPR function. 34. Parameters apply from tCK(avg)min to tCK(avg)max at all standard JEDEC clock period values as stated in the Speed Bin Tables. 35. This parameter must keep consistency with Speed-Bin Tables . 36. DDR4-1600 AC timing apply if DRAM operates at lower than 1600 MT/s data rate. UI=tCK(avg).min/2 37. applied when DRAM is in DLL ON mode. 38. Assume no jitter on input clock signals to the DRAM 39. Value is only valid for RZQ/7 RONNOM = 34 ohms 40. 1tCK toggle mode with setting MR4:A11 to 0 41. 2tCK toggle mode with setting MR4:A11 to 1, which is valid for DDR4-2400/2666/3200 speed grade. 42. 1tCK mode with setting MR4:A12 to 0 43. 2tCK mode with setting MR4:A12 to 1, which is valid for DDR4-2400/2666/3200 speed grade. 44. The maximum read preamble is bounded by tLZ(DQS)min on the left side and tDQSCK(max) on the right side. 45. DQ falling signal middle-point of transferring from High to Low to first rising edge of DQS diff-signal cross-point 46. last falling edge of DQS diff-signal cross-point to DQ rising signal middle-point of transferring from Low to High 47. VrefDQ value must be set to either its midpoint or Vcent_DQ(midpoint) in order to capture DQ0 or DQL0 low level for entering PDA mode. 48. The maximum read postamble is bound by tDQSCK(min) plus tQSH(min) on the left side and tHZ(DQS)max on the right side. 49. Reference level of DQ output signal is specified with a midpoint as a widest part of Output signal eye which should be approximately 0.7 * VDDQ as a center level of the static single-ended output peak-to-peak swing with a driver impedance of 34 ohms and an effective test load of 50 ohms to VTT = VDDQ .

14.4 The DQ input receiver compliance mask for voltage and timing

must not encroach in order for the DRAM input receiver to be expected to be able to successfully capture a valid input signal; it is not the valid data-eye. Figure 24. DQ Receiver(Rx) compliance mask Figure 25. Across pin Vref DQ voltage variation to have valid Rx Mask values. Vref will be set by the system to account for Ron and ODT settings.

Figure 26. DQS to DQ and DQ to DQ Timings at DRAM Balls DQS_t/DQS_c center aligned to the DQ per pin. NOTE : DQx represents an optimally centered mask. NOTE : DRAMa represents a DRAM without any DQS/DQ skews. DQy represents earliest valid mask. DRAMb represents a DRAM with early skews (negative tDQS2DQ). DQz represents latest valid mask. NOTE : Figures show skew allowed between DRAM to DRAM and DQ to DQ for a DRAM. Signals assume data centered aligned at DRAM Latch. TdiPW is not shown; composite data-eyes shown would violate TdiPW. VCENT DQ(midpoint) is not shown but is assummed to be midpoint of VdiVW..

• 66 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB [ Table 54 ] DRAM DQs In Receive Mode; * UI=tck(avg)min/2 NOTE : 1. Data Rx mask voltage and timing total input valid window where VdIVW is centered around Vcent_DQ( midpoint) after VrefDQ training is completed. The data Rx mask is applied per bit and should include voltage and temperature drift terms. The input buffer design specification is to achieve at least a BER = e-16 when the RxMask is not violated. The BER will be characterized and extrapolated if necessary using a dual dirac method from a higher BER(tbd). 2. Defined over the DQ internal Vref range 1. 3. See Overshoot and Undershoot Specifications. 4. DQ input pulse signal swing into the receiver must meet or exceed VIHL AC(min). . VIHL_AC(min) is to be achieved on an UI basis when a rising and falling edge occur in the same UI, i.e. a valid TdiPW. 5. DQ minimum input pulse width defined at the Vcent_DQ( midpoint). 6. DQS to DQ offset is skew between DQS and DQs within a nibble (x4) or word (x8, x16) at the DDR4 SDRAM balls over process, voltage, and temperature. 7. DQ to DQ offset is skew between DQs within a nibble (x4) or word (x8, x16) at the DDR4 SDRAM balls for a given component over process, voltage, and temperature. 8. Input slew rate over VdIVW Mask centered at Vcent_DQ( midpoint). Slowest DQ slew rate to fastest DQ slew rate per transition edge must be within 1.7 V/ns of each other. 9. Input slew rate between VdIVW Mask edge and VIHL_AC(min) points. 10. All Rx Mask specifications must be satisfied for each UI. For example, if the minimum input pulse width is violated when satisfying TdiVW(min), VdiVW(max), and minimum slew rate limits, then either TdiVW(min) or minimum slew rates would have to be increased to the point where the minimum input pulse width would no longer be violated. Symbol Parameter 1600/1866/2133 2400 2666 Unit NOTE min max min max min max VdIVW Rx Mask voltage - pk-pk - 136 - 130 - 120 mV 1,2,10 TdIVW Rx timing window - 0.2 - 0.2 - 0.22 UI* 1,2,10 VIHL_AC DQ AC input swing pk-pk 186 - 160 - 150 - mV 3,4,10 TdIPW DQ input pulse width 0.58 0.58 0.58 - UI* 5,10 tDQ2DQ Rx Mask DQ to DQ offset - tbd - tbd - 0.105 UI* 7 srr1, srf1 Input Slew Rate over VdIVW if tCK >= 0.935ns 1.0 9 1.0 9 1.0 tbd V/ns 8,10 Input Slew Rate over VdIVW if 0.935ns > tCK >= 0.625ns - - 1.25 9 1.25 tbd V/ns 8,10 srr2 Rising Input Slew Rate over 1/2 VIHL_AC 0.2*srr1 9 0.2*srr1 9 0.2*srr1 tbd V/ns 9,10 srf2 Falling Input Slew Rate over 1/2 VIHL_AC 0.2*srf1 9 0.2*srf1 9 0.2*srr1 tbd V/ns 9,10

• 67 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB

14.5 DDR4 Function Matrix

DDR4 SDRAM has several features supported by ORG and also by Speed. The following Table is the summary of the features. [ Table 55 ] Function Matrix (By ORG. V:Supported, Blank:Not supported) Functions x4 x8 x16 NOTE Write Leveling VVV Temperature controlled Refresh VVV Low Power Auto Self Refresh VVV Fine Granularity Refresh VVV Multi Purpose Register VVV Data Mask VV Data Bus Inversion VV TDQS V ZQ calibration VVV DQ Vref Training VVV Per DRAM Addressability VVV Mode Register Readout VVV CAL VVV WRITE CRC VVV CA Parity VVV Control Gear Down Mode VVV Programmable Preamble VVV Maximum Power Down Mode VV Boundary Scan Mode V Additive Latency VV 3DS VV

• 68 - datasheet DDR4 SDRAM Rev. 1.6 K4A8G165WB [ Table 56 ] Function Matrix (By Speed. V:Supported, Blank:Not supported) Functions DLL Off mode DLL On mode NOTEequal or slower than 250Mbps 1600/1866/2133 Mbps 2400Mbps 2666Mbps Write Leveling VV V V Temperature controlled Refresh VV V V Low Power Auto Self Refresh VV V V Fine Granularity Refresh VV V V Multi Purpose Register VV V V Data Mask VV V V Data Bus Inversion VV V V TDQS VV V ZQ calibration VV V V DQ Vref Training VV V V Per DRAM Addressability VV V Mode Register Readout VV V V CAL VV V WRITE CRC VV V CA Parity VV V Control Gear Down Mode V Programmable Preamble ( = 2tCK) VV Maximum Power Down Mode VV V Boundary Scan Mode VV V V 3DS VV V V