K4100

2SK4100LS SANYO | Alldatasheet

Document overview

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Technical content

Features

• Low ON-resistance, low input capacitance, ultrahigh-speed switching.
• Adoption of high reliability HVP process.
• Attachment workability is good by Mica-less package.
• A valanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 650 V Gate-to-Source Voltage V GSS ±30 V Drain Current (DC) IDc*1 Limited only by maximum temperature 6 A IDpack*2 SANYO’s ideal heat dissipation condition 5.6 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% 24 A Allowable Power Dissipation P D 2.0 W Tc=25°C (SANYO’s ideal heat dissipation condition) 33 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *3 E AS 105 mJ Avalanche Current *4 I AV 6A *1 Shows chip capability *2 Package limited *3 VDD =99V , L=5mH, IAV =6A *4 L≤5mH, single pulse Marking : K4100 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 60607QB TI IM TC-00000729 SANYO Semiconductors DATA SHEET 2SK4100LS N-Channel Silicon MOSFET General-Purpose Switching Device

Applications

No. A0778-2/5 Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =10mA, VGS =0V 650 V Zero-Gate Voltage Drain Current I DSS VDS =520V, VGS =0V 100 µA Gate-to-Source Leakage Current I GSS VGS =±30V, VDS =0V ±100 nA Cutoff Voltage V GS (off) V DS =10V, ID =1mA 3 5 V Forward Transfer Admittance yfs VDS =10V, ID =3A 2 4 S Static Drain-to-Source On-State ResistanceR DS (on) I D =3A, VGS =10V 1.05 1.35 Ω Input Capacitance Ciss V DS =30V, f=1MHz 600 pF Output Capacitance Coss V DS =30V, f=1MHz 110 pF Reverse Transfer Capacitance Crss V DS =30V, f=1MHz 24 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 18 ns Rise Time t r See specified Test Circuit. 41 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 78 ns Fall Time t f See specified Test Circuit. 28 ns Total Gate Charge Qg V DS =200V, VGS =10V, ID =6A 23 nC Gate-to-Source Charge Qgs V DS =200V, VGS =10V, ID =6A 4.5 nC Gate-to-Drain “Miller” Charge Qgd V DS =200V, VGS =10V, ID =6A 13 nC Diode Forward Voltage V SD IS=6A, VGS =0V 0.9 1.2 V Package Dimensions unit : mm (typ) 7509-002 Switching Time Test Circuit Avalanche Resistance Test Circuit 16.014.0 3.6 3.5 7.2 16.1 0.7 2.55 2.55 2.4 1.2 0.9 0.75 0.6 1.2 4.5 2.8 123 10.0 3.2 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS) PW=10 µs D.C.≤0.5% P. G R GS =50Ω G S D ID =3A R L=66.7Ω VDD =200V VOUT 2SK4100LS VIN 10V VIN 50Ω ≥50Ω RG VDD L 10V 2SK4100LS

No. A0778-3/5 Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Drain Current, ID -- A Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Case Temperature, Tc -- °C Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Diode Forward V oltage, VSD -- V Source Current, IS -- A Gate-to-Source V oltage, VGS -- V ID -- VDS ID -- VGS R DS (on) -- VGS R DS (on) -- Tc IS -- VSDyfs -- ID Drain Current, ID -- A Switching Time, SW Time -- ns SW Time -- ID Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- VDS IT12406 IT12403 --50 --25 150 IT12408IT12407 0.1 23 5 7 1.0 0.01 0.1 1.0 21.0 32 3 57 10 02 5 5 0 7 5 100 125 25°C 75°C Tc= --25°C ID =3A --25°C 25°C Tc=75°C Tc= --25 25°C 75°C V DS =10V Tc=75 --25 V GS =0V IT12410 02 0 10 30 100 1000 f=1MHz 1051 5 2 0 3 0 250 IT12405 0.5 1.0 4.0 1.5 2.5 3.0 3.5 2.0 0.5 3.5 1.0 1.5 2.5 2.0 3.0 IT12404 6428 1 0 2012 14 16 180 V GS =5V 10V 15V V DS =20V V GS =10V , I D=3A 5040 Ciss Crss Coss 0.1 1.0 223 5 7 1035 7 100 IT12409 td(off) td(on) V DD =200V V GS =10V tf tr Tc=25°C Gate-to-Source V oltage, VGS -- V

No. A0778-4/5 Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W A S OVGS -- Qg PD -- Ta PD -- Tc EAS -- Ta A valanche Energy derating factor -- % Ambient Temperature, Ta -- °C 20 40 60 80 100 120 2.5 140 160 2.0 1.5 1.0 0.5 IT12337 25 50 75 100 125 150 100 120 175 IT10478 IT12412 0.01 0.1 1.0 0.1 1.0 10 10023 5 7 23 5 7 7 2 100035 2 35 702 5 2010 155 IT12411 20 40 60 80 100 140 120 160 IT12338 V DS =200V ID =6A 10µs100 µs 100ms 10ms 1ms DC operation IDc (*1)=6A IDpack(*2)=5.6A Operation in this area is limited by RDS (on). IDP =24A PW ≤10µs *1. Shows chip capability *2. SANYO’s ideal heat dissipation condition Tc=25°C Single pulse

No. A0778-5/5PS SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Note on usage : Since the 2SK4100LS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. This catalog provides information as of June, 2007. Specifications and information herein are subject to change without notice.