IKW40N120T2_14 INFINEON | Alldatasheet
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TrenchStop® 2nd Generation Series IFAG IPC TD VLS 1 Rev. 2.4 23.09.2014 Low Loss DuoPack : IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel Emitter Controlled Diode Best in class TO247 Short circuit withstand time – 10s Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop® 2nd generation for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior Easy paralleling capability due to positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel Emitter Controlled HEDiode Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Code Package IKW40N120T2 1200V 40A 1.75V 175C K40T1202 PG-TO-247-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current (Tj=150°C) TC = 25C TC = 110C IC 752 A Pulsed collector current, tp limited by Tjmax IC p u l s 160 Turn off safe operating area VCE 1200V, Tj 175C - 160 DC Diode forward current (Tj=150°C) TC = 25C TC = 110C IF 752 Diode pulsed current, tp limited by Tjmax IF p u l s 160 Gate-emitter voltage VGE 20 V Short circuit withstand time3) VGE = 15V, VCC 600V, Tj,start 175C tSC 10 s Power dissipation TC = 25C Pt o t 480 W Operating junction temperature Tj -40...+175 C Storage temperature Ts t g -55...+150 Soldering temperature, 1.6mm (0.063 in.) from case for 10s Wavesoldering only, temperature on leads only - 260
1 J-STD-020 and JESD-022
2 Limited by bond wire
3) Allowed number of short circuits: <1000; time between short circuits: >1s. PG-TO-247-3 G C E
TrenchStop® 2nd Generation Series IFAG IPC TD VLS 2 Rev. 2.4 23.09.2014 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case Rt h J C 0.31 K/W Diode thermal resistance, junction – case Rt h J C D 0.53 Thermal resistance, junction – ambient Rt h J A 40 Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value Unit min. typ. max. Static Characteristic Collector-emitter breakdown voltage V( B R ) C E S VGE =0V, IC =5 00µ A 1200 - - V Collector-emitter saturation voltage VC E ( s a t ) VGE = 15V, IC =40A Tj =25 C Tj =1 50 C Tj =1 75 C 1.75 2.25 2.3 2.2 Diode forward voltage VF VGE =0V, IF =40A Tj =25 C Tj =1 50 C Tj =1 75 C 1.75 1.80 1.80 2.2 Gate-emitter threshold voltage VG E ( t h ) IC =1.5mA, VCE =VGE 5.2 5.8 6.4 Zero gate voltage collector current IC E S VCE =1200V , VGE =0V Tj =25 C Tj =15 0C Tj =1 75 C 0.4 4.0 mA Gate-emitter leakage current IG E S VCE =0V, VGE =20V - - 200 nA Transconductance gfs VCE =20V, IC =40A - 21 - S
TrenchStop® 2nd Generation Series IFAG IPC TD VLS 3 Rev. 2.4 23.09.2014 Dynamic Characteristic Input capacitance Ci s s VCE =25V, VGE =0V, f=1MHz - 2360 - pF Output capacitance Co s s - 230 - Reverse transfer capacitance Cr s s - 125 - Gate charge QG a t e VCC =960V, IC =40A VGE =15V - 192 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE - 13 - nH Short circuit collector current1) IC ( S C ) VGE =15V, tSC 10 s VCC = 6 00V, Tj, s t a r t = 25 C Tj. s t a r t = 175 C 220 156 - A Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions Value Unit min. typ. max. IGBT Characteristic Turn-on delay time td ( o n ) Tj =25 C, VCC =600V, IC =40A, VGE =0/15 V, RG =1 2, 2) =80 nH, 2) =67 pF Energy losses include “tail” and diode reverse recovery. - 33 - ns Rise time tr - 28 - Turn-off delay time td ( o f f ) - 314 - Fall time tf - 94 - Turn-on energy Eon - 3.2 - mJ Turn-off energy Eo f f - 2.05 - Total switching energy Ets - 5.25 - Anti-Parallel Diode Characteristic Diode reverse recovery time trr Tj =25 C, VR =600V, IF =40A, di F /dt =95 0A/ s - 285 - ns Diode reverse recovery charge Qrr - 3.3 µC Diode peak reverse recovery current Ir r m - 23 A Diode peak rate of fall of reverse recovery current during tb di rr /dt - 350 - A/s 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 2) Leakage inductance L and Stray capacity C due to dynamic test circuit in Figure E.
TrenchStop® 2nd Generation Series IFAG IPC TD VLS 4 Rev. 2.4 23.09.2014 Switching Characteristic, Inductive Load, at Tj=175 C Parameter Symbol Conditions Value Unit min. typ. max. IGBT Characteristic Turn-on delay time td ( o n ) Tj =175 C VCC =600V, IC =40A, VGE =0/15V, RG = 1 2, 1) =180nH, 1) =67 pF Energy losses include “tail” and diode reverse recovery. - 32 - ns Rise time tr - 28 - Turn-off delay time td ( o f f ) - 405 - Fall time tf - 195 - Turn-on energy Eon - 4.5 - mJ Turn-off energy Eo f f - 3.8 - Total switching energy Ets - 8.3 - Anti-Parallel Diode Characteristic Diode reverse recovery time trr Tj =1 75 C VR =600V, IF =40A, di F /dt =95 0A/ s - 480 - ns Diode reverse recovery charge Qrr - 6.6 - µC Diode peak reverse recovery current Ir r m - 31 - A Diode peak rate of fall of reverse recovery current during tb di rr /dt - 200 A/s 1) Leakage inductance L and Stray capacity C due to dynamic test circuit in Figure E.
TrenchStop® 2nd Generation Series IFAG IPC TD VLS 13 Rev. 2.4 23.09.2014
TrenchStop® 2nd Generation Series IFAG IPC TD VLS 14 Rev. 2.4 23.09.2014 I r r m 90% I r r m 10% I r r m di /dt F t r r I F i,v tQ S Q F t S t F V R di /dt r r Q =Q Q r r S F t =t t r r S F Figure C. Definition of diodes switching characteristics p(t) 1 2 n T (t)j n n T C r r r r rr Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Figure A. Definition of switching times Figure B. Definition of switching losses
TrenchStop® 2nd Generation Series IFAG IPC TD VLS 15 Rev. 2.4 23.09.2014 Published by Infineon Technologies AG
81726 Munich, Germany
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