K4096

2SK4096LS_12 SANYO | Alldatasheet

Document overview

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Technical content

Features

• ON-resistance R DS(on)=0.65Ω (typ.) • Input capacitance Ciss=600pF
• 10V drive Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 500 V Gate-to-Source Voltage V GSS ±30 V Drain Current (DC) IDc*1 Limited only by maximum temperature Tch=150°C 8A IDpack*2 Tc=25°C (SANYO’s ideal heat dissipation condition)*3 7.1 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 32 A Allowable Power Dissipation P D 2.0 W Tc=25°C (SANYO’s ideal heat dissipation condition)*3 33 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *4 E AS 354 mJ Avalanche Current *5 I AV 8A Note : *1 Shows chip capability *2 Package limited *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=50V , L=10mH, IAV=8A (Fig.1) *5 L≤10mH, single pulse Package Dimensions unit : mm (typ) 7528-001

91212 TKIM TC-00002810/O1007 TIIM TC-00000921/51607QB TIIM TC-00000725

General-Purpose Switching Device

Applications

http://www.sanyosemi.com/en/network/ Product & Package Information

• Package : TO-220F-3FS
• JEITA, JEDEC : SC-67
• Minimum Packing Quantity : 50 pcs./magazine Marking Electrical Connection K4096 LOT No. 1 : Gate 2 : Drain 3 : Source SANYO : TO-220F-3FS 10.16 0.8 15.8712.98 3.3 6.68 3.23 1.47 MAX 15.8 4.7 2.54 2.76 123 0.5 2.54 2.54 3.18 2SK4096LS-1E

No. A0774-2/7 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=10mA, VGS=0V 500 V Zero-Gate Voltage Drain Current I DSS V DS=400V, VGS=0V 100 μA Gate-to-Source Leakage Current I GSS VGS=±30V, VDS=0V ±100 nA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 35 V Forward Transfer Admittance | yfs | VDS=10V, ID=4A 2.2 4.5 S Static Drain-to-Source On-State Resistance RDS(on) I D=4A, VGS=10V 0.65 0.85 Ω Input Capacitance Ciss VDS=30V, f=1MHz 600 pF Output Capacitance Coss 130 pF Reverse Transfer Capacitance Crss 28 pF Turn-ON Delay Time td(on) See Fig.2 18.5 ns Rise Time tr 46 ns Turn-OFF Delay Time td(off) 75 ns Fall Time tf 33 ns Total Gate Charge Qg VDS=200V, VGS=10V, ID=8A 24 nC Gate-to-Source Charge Qgs 4.5 nC Gate-to-Drain “Miller” Charge Qgd 14 nC Diode Forward Voltage VSD IS=8A, VGS=0V 0.9 1.2 V Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit

Ordering Information

Device Package Shipping memo 2SK4096LS-1E TO-220F-3FS 50pcs./magazine Pb Free 50Ω ≥50Ω RG VDD L 10V 2SK4096LS PW=10μs D.C.≤0.5% P.G RGS=50Ω G S D ID=4A RL=50Ω VDD=200V VOUT 2SK4096LS VIN 10V VIN

No. A0774-3/7 Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Case Temperature, Tc -- °C Drain Current, ID -- A Forward Transfer Admittance, | yfs | -- S Diode Forward V oltage, VSD -- V Source Current, IS -- A Gate-to-Source V oltage, VGS -- V ID -- VDS ID -- VGS RDS(on) -- VGS RDS(on) -- Tc IS -- VSD| yfs | -- ID Drain Current, ID -- A Switching Time, SW Time -- ns SW Time -- ID Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- VDS IT12332IT12331 IT12334IT12333 --50 --25 150 0.1 23 5 7 1.0 0.01 0.1 1.0 21.0 32 3 57 10 0 25 50 75 100 125 25°C 75°C Tc= --25°C ID=4A --25°C 25°C Tc=75°C Tc= --25 25°C 75°C VDS=10V Tc=75 --25 VGS=0V 02 0 10 30 100 1000 f=1MHz 1051 5 2 0 3 0 250 0.5 1.0 3.0 1.5 2.5 2.0 0.2 0.4 2.0 1.0 1.2 1.4 1.6 1.8 0.8 0.6 642 8 10 20 12 14 16 180 Tc=25°C VGS=5V 10V 15V VDS=20V VGS =10V , I D=4A 5040 Ciss Crss Coss 0.1 1.0 223 5 7 1035 7 100 IT12330 IT12327 IT12329 IT12328 IT12332IT12331 IT12334IT12333 td(off) td(on) VDD=200V VGS=10V tf tr

No. A0774-4/7 Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W A S OVGS -- Qg PD -- Ta PD -- Tc EAS -- Ta Avalanche Energy derating factor -- % Ambient Temperature, Ta -- °C 20 40 60 80 100 120 2.5 140 160 2.0 1.5 1.0 0.5 IT12337 20 40 60 80 100 140 120 160 IT12338 02 5 2010 155 IT12335 25 50 75 100 125 150 100 120 175 IT10478 VDS=200V ID=8A IT16936 0.01 0.1 1.0 1.0 10μs100 μs 100ms 10ms 1ms DC operation 10 10023 5 7 23 5 7 7 23 5 IDc(*1)=8A IDpack(*2)=7.1A Operation in this area is limited by RDS(on). IDP=32A(PW≤10μs) Tc=25°C Single pulse *1. Shows chip capability *2. SANYO's ideal heat dissipation condition

No. A0774-5/7 Magazine Specifi cation 2SK4096LS-1E

No. A0774-6/7 Outline Drawing 2SK4096LS-1E Mass (g) Unit 1.8 * For reference mm

PS No. A0774-7/7 This catalog provides information as of September, 2012. Specifi cations and information herein are subject to change without notice. Note on usage : Since the 2SK4096LS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.