K4013

2SK4013 TOSHIBA | Alldatasheet

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ) 2SK4013 Switching Regulator Applications

• Low drain-source ON resistance: R DS (ON) = 1.35 Ω (typ.)
• High forward transfer admittance: |Yfs| = 5.0 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 640 V)
• Enhancement-model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 800 V Drain-gate voltage (RGS = 20 kΩ) V DGR 800 V Gate-source voltage VGSS ±30 V DC (Note 1) I D 6 Drain current Pulse (Note 1) I DP 18 A Drain power dissipation (Tc = 25°C) P D 45 W Single pulse avalanche energy (Note 2) EAR 317 mJ Avalanche current IAR 6 A Repetitive avalanche energy (Note 3) E AR 4.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R th (ch-c) 2.78 °C/W Thermal resistance, channel to ambient R th (ch-a) 62.5 °C/W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: V DD = 90 V, Tch = 25°C (initial), L = 14.5 mH, RG = 25 Ω, IAR = 6 A Note 3: Repetitive rating; pulse width li mited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution. Unit: mm JEDEC ⎯ JEITA SC-67 TOSHIBA 2-10U1B Weight: 1.7 g (typ.) 1: Gate 2: Drain 3: Source

Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS V GS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain-source breakdown voltage V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V Drain cut-OFF current IDSS V DS = 640 V, VGS = 0 V ⎯ ⎯ 100 μA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 800 ⎯ ⎯ V Gate threshold voltage Vth V DS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON resistance RDS (ON) V GS = 10 V, ID = 3 A ⎯ 1.35 1.7 Ω Forward transfer admittance ⎪Yfs⎪ V DS = 20 V, ID = 3 A 2.5 5.0 ⎯ S Input capacitance Ciss ⎯ 1400 ⎯ Reverse transfer capacitance Crss ⎯ 30 ⎯ Output capacitance Coss VDS = 25 V, VGS = 0 V, f = 1 MHz ⎯ 130 ⎯ pF Rise time tr ⎯ 25 ⎯ Turn-ON time ton ⎯ 80 ⎯ Fall time tf ⎯ 65 ⎯ Switching time Turn-OFF time t off ⎯ 220 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 45 ⎯ Gate-source charge Qgs ⎯ 25 ⎯ Gate-drain (“miller”) charge Qgd VDD ∼ − 400 V, VGS = 10 V, ID = 6 A ⎯ 20 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 6 A Pulse drain reverse current (Note 1) I DRP ⎯ ⎯ ⎯ 18 A Forward voltage (diode) VDSF I DR = 6 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr ⎯ 1100 ⎯ ns Reverse recovery charge Qrr IDR = 6 A, VGS = 0 V, dIDR/dt = 100 A/μs ⎯ 10 ⎯ μC Marking Duty < = 1%, tw = 10 μs 0 V

10 VVGS

RL= 133 Ω VDD ∼ − 400 V ID = 3 A VOUT 50 Ω Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. K4013 Part No. (or abbreviation code)

Ta=25℃ Pulse test 02468 1 0 VGS=4.5V 5.25 5.5 6Common source Tc ＝ 25°C Puls e tes t 8,10 ID − VDS 5.25 5.5 0.1 100 0.1 1 10 100 Common source VDS=20V Pulse test Ta=100℃ -55 02468 1 0 Common source VDS=20V Pulse test Ta=100℃ -55 0 1 02 03 04 05 0 Common source Ta=25℃ Pulse test VGS=4.5V 5.25 5.5 8,10 5.75 0.10 1.00 10.00 0.01 0.1 1 10 Common source VGS=10V Tc=25℃ Pulse test ID − VDS ID − VDS ID − VGS VDS − VGS ⎪Yfs⎪ − ID RDS (ON) − ID DRAIN−SOURCE VOLTAGE V DS ( V ) DRAIN−SOURCE VOLTAGE V DS ( V ) GATE−SOURCE VOLTAGE V GS ( V ) GATE−SOURCE VOLTAGE V GS ( V ) DRAIN CURRENT I D (A) DRAIN CURRENT I D (A) DRAIN CURRENT I D (A) DRAIN CURRENT I D (A) DRAIN−SOURCE VOLTAGE V DS ( V ) DRAIN CURRENT I D (A) DRAIN−SOURCE ON RESISTANCE RDS (ON) ( Ω) FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S) COMMON SOURCE Tc = 25°C PULSE TEST 40 208 12 16 ID = 1.5 A COMMON SOURCE Tc = 25°C PULSE TEST Tc = 100°C Tc = 100°C

0.1 1 10 100 Ciss Coss CrssCommon source VGS=0V f=1MHz Tc=25℃ 0.1 Common source Tc=25℃ Pulse test VGS=0､-1V -80 -40 0 40 80 120 160 Common source VDS=10V ID=1mA Pulse test -80 -40 0 40 80 120 160 Common source VGS=10V Pulse test ID=1.5A RDS (ON) − Tc IDR − VDS C – VDS Vth − Tc DYNAMIC INPUT/OUTPUT CHARACTERISTICS CASE TEMPERATURE Tc (°C) DRAIN−SOURCE VOLTAGE V DS ( V ) DRAIN−SOURCE VOLTAGE V DS ( V ) CASE TEMPERATURE Tc (°C) TOTAL GATE CHARGE Q g (nC) DRAIN REVERSE CURRENT I DR ( A ) DRAIN−SOURCE ON RESISTANCE RDS (ON) ( Ω) GATE THRESHOLD VOLTAGE V th (V) CAPACITANCE C (pF) DRAIN−SOURCE VOLTAGE V DS (V) GATE−SOURCE VOLTAGE V GS ( V ) PD - Tc 0 40 80 120 160 CA SE TEMPERA TURE Tc (℃) DRAIN POWER DISSIPATION PD (W) 450 300 VDS = 400 V 200 VGS VDS 40 60 80 100 20 100 150 5 Common source ID = 6 A Tc = 25°C Pulse test

0.01 10μ 0.1 100μ 1ｍ 10ｍ 100ｍ 1 10 T PDM t Duty = t/T Rth (ch-c) = 2.78°C/W Duty=0.5 0.2 0.1 0.05 0.02 0.01 0.001 rth – tw PULSE WIDTH t w ( s ) NORMALIZED TRANSIENT THERMAL IMPEDANCE r th (t)/Rth (ch-c) Duty=0.5 SINGLE PULSE EAS - Tch 100 150 200 250 300 350 400 25 50 75 100 125 150 CHA NNEL TEMPERA TURE ( INITIA L) T cH (℃) AVALANCHE ENERGY EAS (mJ) −15 V 15 V TEST CIRCUIT WAVE FORM IAR BVDSS VDD V DS RG = 25 Ω VDD = 90 V, L = 14.5 mH ⎟⎟ −⋅ ⋅ ⋅ = VDDBVDSS BVDSS2I L2 1ΕAS AVALANCHE ENERGY E AS (mJ) CHANNEL TEMPERATURE (INITIAL) T ch (°C) DRAIN−SOURCE VOLTAGE V DS I V SAFE OPERATING AREA DRAIN CURRENT I D (A) 100 10 100001000 ID max (PULSE) * ID max (CONTINUOUS) * DC OPERATION Tc = 25°C 100 μs * 1 ms * VDSS max 0.01 0.1 100 *: SINGLE NONPETITIVE PULSE Tc = 25°C Curves must be derated linearly with increase in temperature

RESTRICTIONS ON PRODUCT USE 20070701-EN

• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
• The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringement s of patents or other rights of the third parties which may result from its use. No license is granted by implic ation or otherwise under any patents or other rights of TOSHIBA or the third parties.
• Please contact your sales representative for product- by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.