K3797

2SK3797 TOSHIBA | Alldatasheet

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Technical content

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( π-MOSVI) 2SK3797 Switching Regulator Applications

• Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.)
• High forward transfer admittance: |Yfs| = 7.5 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 600 V)
• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V , ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V DSS 600 V Drain-gate voltage (RGS = 20 kΩ) V DGR 600 V Gate-source voltage V GSS ±30 V DC (Note 1) I D 13 Drain current Pulse (t = 1 ms) (Note 1) IDP 52 A Drain power dissipation (Tc = 25°C) PD 50 W Single pulse avalanche energy (Note 2) EAS 1033 mJ Avalanche current I AR 13 A Repetitive avalanche energy (Note 3) E AR 5.0 mJ Channel temperature T ch 150 °C Storage temperature range T stg -55~150 °C Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case R th (ch-c) 2.5 °C/W Thermal resistance, channel to ambient R th (ch-a) 62.5 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device. Note 2: V DD = 90 V, Tch = 25°C (initial), L = 10.7 mH, IAR = 13 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm 1: Gate 2: Drain 3: Source JEDEC ― JEITA SC-67 TOSHIBA 2-10U1B Weight: 1.7 g (typ.)

Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ±25 V, VDS = 0 V ⎯ ⎯ ± 10 µA Gate-source breakdown voltage V (BR) GSS IG = ±10 µA, VDS = 0 V ±30 ⎯ ⎯ V Drain cutoff current I DSS V DS = 600 V, VGS = 0 V ⎯ ⎯ 100 µA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 600 ⎯ ⎯ V Gate threshold voltage V th V DS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON resistance R DS (ON) V GS = 10 V, ID = 6.5 A ⎯ 0.32 0.43 Ω Forward transfer admittance ⎪Yfs⎪ V DS = 10 V, ID = 7.0 A 2.1 7.5 ⎯ S Input capacitance C iss ⎯ 3100 ⎯ Reverse transfer capacitance C rss ⎯ 20 ⎯ Output capacitance C oss VDS = 25 V, VGS = 0 V, f = 1 MHz ⎯ 270 ⎯ pF Rise time t r ⎯ 60 ⎯ Turn-on time t on ⎯ 110 ⎯ Fall time t f ⎯ 50 ⎯ Switching time Turn-off time t off ⎯ 215 ⎯ ns Total gate charge Q g ⎯ 62 ⎯ Gate-source charge Q gs ⎯ 40 ⎯ Gate-drain charge Q gd VDD ∼− 400 V, VGS = 10 V, ID = 13 A ⎯ 22 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 13 A Pulse drain reverse current (Note 1) I DRP ⎯ ⎯ ⎯ 52 A Forward voltage (diode) V DSF I DR = 13 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time t rr ⎯ 1050 ⎯ ns Reverse recovery charge Q rr IDR = 13 A, VGS = 0 V, dIDR/dt = 100 A/µs ⎯ 15 ⎯ µC Marking RL = 30Ω 0 V 10 V VGS VDD ∼− 200 V ID = 6.5 A VOUT 50 Ω Duty <= 1%, tw = 10 µs Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. K3797 Part No. (or abbreviation code)

5.8V 6.2V 6.6V 10V 5.4V VGS = 4 V DRAIN CURRENT I D ( A ) RDS (ON) – ID DRAIN−SOURCE ON RESISTANCE RDS (ON) ( Ω) DRAIN−SOURCE VOLTAGE V DS ( V ) ID – VDS DRAIN CURRENT I D ( A ) DRAIN−SOURCE VOLTAGE V DS (V) ID – VDS DRAIN CURRENT I D ( A ) GATE−SOURCE VOLTAGE V GS ( V ) ID – VGS DRAIN CURRENT I D ( A ) 0 2 4 6 8 10 10V GATE−SOURCE VOLTAGE V GS (V) VDS – VGS 0 4 8 12 16 20 DRAIN CURRENT I D ( A ) ⎪Yfs⎪ – ID FORWARD TRANSIENT ADMITTANCE ⎪Yfs⎪ (S) 0.1 0.1 1 10 100 0.3 0.1 100 0.1 100 10 0 2 4 8 COMMON SOURCE Tc = 25°C PULSE TEST 0 10 30 COMMON SOURCE Tc = 25°C PULSE TEST 6.2V 6.6V 25 20 5 VGS = 4V 155.8V 5.4V COMMON SOURCE Tc = 25℃ PULSE TEST ID = 13 A ID = 6.5 A ID = 3 A VGS = 10 V VGS = 15 V COMMON SOURCE Tc = 25°C PULSE TEST Tc = −55°C 100 DRAIN−SOURCE VOLTAGE VDS (V) COMMON SOURCE VDS = 20 V PULSE TEST Tc = 25°C Tc = 100°C Tc = −55°C COMMON SOURCE VDS = 20 V PULSE TEST

DRAIN−SOURCE VOLTAGE V DS (V) Capacitance – VDS CAPACITANCE C (pF) 0.1 100 1000 10000 1 10 100 CASE TEMPERATURE Tc (°C) RDS (ON) – T c DRAIN−SOURCE ON RESISTANCE RDS (ON) ( Ω) 160 −40 0 40 80 120 −80 0.8 0.6 0.4 0.2 TOTAL GATE CHARGE Q g ( n C ) DYNAMIC INPUT/OUTPUT CHARACTERISTICS DRAIN−SOURCE VOLTAGE VDS (V) GATE THRESHOLD VOLTAGE Vth ( V ) CASE TEMPERATURE Tc (°C) Vth – Tc −80 −40 0 40 80 120 160 DRAIN POWER DISSIPATION PD (W) CASE TEMPERATURE Tc (°C) PD – Tc 0 40 80 120 160 DRAIN−SOURCE VOLTAGE V DS (V) IDR – VDS DRAIN REVERSE CURRENT IDR (A) 0.1 −0.2 100 0 60 80 100 500 400 40 20 COMMON SOURCE VGS = 10 V PULSE TEST ID = 13A 6.5 COMMON SOURCE VDS = 10 V ID = 1 mA PULSE TEST COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25°C Ciss Coss Crss COMMON SOURCE Tc = 25°C PULSE TEST 3 1 VGS = 0, −1 V GATE−SOURCE VOLTAGE V GS ( V ) VDS VGS VDD = 100 V 200V 400V COMMON SOURCE ID = 13 A Tc = 25°C PULSE TEST 12 300 200 100

−15 V 15 V TEST CIRCUIT WAVEFORM IAR BVDSS VDD V DS RG = 25 Ω VDD = 90 V, L = 10.7mH ⎟⎟ −⋅⋅⋅= VDDBVDSS BVDSS2IL2 1ΕAS CHANNEL TEMPERATURE (INITIAL) T ch ( ° C ) EAS – Tch AVALANCHE ENERGY E AS ( m J ) 1200 800 400 1000 25 50 75 100 125 150 rth – tw PULSE WIDTH t w ( s ) NORMALIZED TRANSIENT THERMAL IMPEDANCE r th (t)/Rth (ch-c) 0.01 10μ 0.1 100μ 1ｍ 10ｍ 100ｍ 1 10 0.001 DRAIN−SOURCE VOLTAGE V DS (V) SAFE OPERATING AREA DRAIN CURRENT I D ( A ) 0.1 100 10 1000100 0.01 Duty=0.5 0.2 0.1 0.05 0.02

0.01 SINGLE PULSE

*SINGLE NONREPETITIVE PULSE Tc = 25°C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE DC OPERATION Tc = 25°C 1 ms * VDSS max ID max (CONTINOUS) ID max (PULSED) * 100 µs * T PDM t Duty = t/T Rth (ch-c) = 2.5°C/W 600 200

• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
• TOSHIBA is continually working to improve the quality an d reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.
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