2SK3747 SANYO | Alldatasheet
Document overview
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Technical content
Features
- Low ON-resistance, low input capacitance, ultrahigh-speed switching.
- High reliability (Adoption of HVP process).
- Attachment workability is good by Mica-less package.
- Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 1500 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID 2A Drain Current (Pulse) IDP PW≤10 µs, duty cycle≤1% 4 A Allowable Power Dissipation PD 3.0 W Tc=25°C5 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS 42 mJ Avalanche Current *2 IAV 2A *1 VDD =99V , L=20mH, IAV =2A *2 L≤20mH, single pulse Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =1mA, VGS =0V 1500 V Zero-Gate Voltage Drain Current IDSS VDS =1200V, VGS =0V 100 µA Gate-to-Source Leakage Current IGSS VGS = ±16V, VDS =0V ±10 µA Cutoff Voltage VGS (off) V DS =10V, ID =1mA 2.5 3.5 V Forward Transfer Admittance yfs VDS =20V, ID =1A 0.7 1.4 S Static Drain-to-Source On-State ResistanceR DS (on) I D =1A, VGS =10V 10 13 Ω Marking : K3747 Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. 62005QB MS IM TB-00001301 / 81004QB TS IM TB-00000018 2SK3747 N-Channel Silicon MOSFET High-Voltage, High-Speed Switching
Applications
No.7767-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Input Capacitance Ciss V DS =30V, f=1MHz 380 pF Output Capacitance Coss V DS =30V, f=1MHz 70 pF Reverse Transfer Capacitance Crss V DS =30V, f=1MHz 40 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 12 ns Rise Time t r See specified Test Circuit. 37 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 152 ns Fall Time t f See specified Test Circuit. 59 ns Total Gate Charge Qg V DS =200V, VGS =10V, ID =2A 37.5 nC Gate-to-Source Charge Qgs V DS =200V, VGS =10V, ID =2A 2.7 nC Gate-to-Drain “Miller” Charge Qgd V DS =200V, VGS =10V, ID =2A 20 nC Diode Forward Voltage V SD IS=2A, VGS =0V 0.88 1.2 V Note) Although the protection diode is contained between gate and source, be careful of handling enough. Package Dimensions unit : mm 7505-003 Switching Time Test Circuit Avalanche Resistance Test Circuit 16.0 5.6 3.1 2.0 2.0 123 2.8 2.0 5.45 5.45 22.020.41.0 0.6 4.0 21.0 5.0 8.03.5 3.4 1 : Gate 2 : Drain 3 : Source SANYO : TO-3PML PW=10 µs D.C.≤0.5% P.G R GS =50Ω G S D ID =1A R L=200Ω VDD =200V VOUT 2SK3747 VIN 10V VIN 50Ω ≥50Ω VDD L 10V 2SK3747
No.7767-3/4 Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Case Temperature, Tc -- °C Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Diode Forward V oltage, VSD -- V Source Current, IS -- A Gate-to-Source V oltage, VGS -- V ID -- VDS ID -- VGS R DS (on) -- VGS R DS (on) -- Tc IS -- VSDyfs -- ID IT07130 IT07131 IT07132 IT07133 --50 --25 0 25 50 75 100 125 150 4.0 3.5 3.0 2.5 2.0 1.5 50454010 3052 5 15 20 35 1.0 0.5 3.0 2.5 2.0 1.5 20181641 221 0 68 1 4 1.0 0.5 10V V GS =4V IT07135 0.01 0.1 1.0 IT07134 --25 Tc=75 0.135 7 2 35 7 2 3 1.0 1.0 0.1 V DS =20V 25°C Tc= --25 75°C V GS =0V ID =1A V GS =10V Tc= --25°C 25°C 75°C 20181641 221 0 68 1 4 ID =1A Tc=75°C 25°C --25°C Tc=25°C pulse V DS =20V pulse Drain Current, ID -- A Switching Time, SW Time -- ns SW Time -- ID Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- VDS IT09037 V DD =200V V GS =10V td(off) tf tr td(on) IT09038 f=1MHz Ciss Coss Crss 100 0.1 1.0 23 5 7 23 0 100 1000 50305 1 52 02 5 3 54 04 510
No.7767-4/4PS Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W A S OVGS -- Qg PD -- Ta PD -- Tc IT07139IT07138 IT07140 IT07141 10 20 30 V DS =200V ID =2A 1.0 0.1 0.01 23 5 723 5 723 571.0 10 100 1000 32 <10µs Operation in this area is limited by RDS (on). 10µs100 µs1ms 10ms 100ms ID =2A IDP =4A DC operation Tc=25°C Single pulse 20 40 0.5 1.0 2.0 1.5 80 100 120 3.0 2.5 3.5 140 160 0 20 40 80 100 120 140 160 Note on usage : Since the 2SK3747 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.