2SK3702 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 60 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D 18 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% 72 A Allowable Power Dissipation P D 2.0 W Tc=25°C2 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =1mA, VGS =0 60 V Zero-Gate Voltage Drain Current I DSS VDS =60V, VGS =0 1 µA Gate-to-Source Leakage Current I GSS VGS = ±16V, VDS =0 ±10 µA Cutoff Voltage V GS (off) V DS =10V, ID =1mA 1.2 2.6 V Forward Transfer Admittance yfs VDS =10V, ID =9A 8 12 S Marking : K3702 Continued on next page. N-Channel Silicon MOSFET 2SK3702

71003 TS IM TA-100558

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. DC / DC Converter Applications Package Dimensions unit : mm 2063A [2SK3702] SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML 1.6 1.2 0.75 14.0 16.0 10.0 18.1 5.6 3.2 7.2 3.5 2.552.55 2.4 4.5 2.8 0.7 2.552.55 2.4 1 23

No.7502-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Static Drain-to-Source On-State Resistance R DS (on)1 I D =9A, VGS =10V 42 55 m Ω R DS (on)2 I D =9A, VGS =4V 60 85 m Ω Input Capacitance Ciss V DS =20V, f=1MHz 775 pF Output Capacitance Coss V DS =20V, f=1MHz 125 pF Reverse Transfer Capacitance Crss V DS =20V, f=1MHz 105 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 11 ns Rise Time t r See specified Test Circuit. 65 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 75 ns Fall Time t f See specified Test Circuit. 70 ns Total Gate Charge Qg V DS =30V, VGS =10V, ID =18A 19 nC Gate-to-Source Charge Qgs V DS =30V, VGS =10V, ID =18A 2.5 nC Gate-to-Drain “Miller” Charge Qgd V DS =30V, VGS =10V, ID =18A 4.1 nC Diode Forward Voltage V SD IS=18A, VGS =0 0.98 1.2 V Switching Time Test Circuit PW=10 µs D.C.≤1% P. G 50Ω G S D ID =9A R L=3.33Ω VDD =30V VOUT 2SK3702 VIN 10V VIN Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A ID -- VDS IT06197 ID -- VGS IT06198 6123450 Tc=25°C 6V10V 8V Tc= --25 --25 Tc=75 °CV GS =3V V DS =10V

No.7502-3/4 Diode Forward V oltage, VSD -- V Forward Current, IF -- A Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Drain Current, ID -- A Switching Time, SW Time -- ns Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Cutoff V oltage, VGS (off) -- V Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Case Temperature, Tc -- °C Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Gate-to-Source V oltage, VGS -- V Case Temperature, Tc -- °C R DS (on) -- VGS IT06199 R DS (on) -- Tc IT06200 140 120 140 120 100 10345678 --50 --25 0 25 50 75 100 125 1509 ID =9A Tc= 75°C 25°C 100 ID=9A, VGS=4V ID=9A, VGS =10V --25°C 100 1000 305 1 52 02 510 Ciss, Coss, Crss -- VDS IT06205 0.1 1.023 5 7 1023 5 7 10023 5 7 100 1000 SW Time -- ID IT06204IT06203 0.01 100 0.1 1.0 IF -- VSD 2015105 VGS -- Qg IT06206 IT06202 23 5 735 7 2 1.0 310 1.0 yfs -- ID --50 --25 0 25 50 75 100 2.0 1.5 0.5 1.0 2.5 125 150 VGS (off) -- Tc IT06201 V DS =30V ID =18A V DD =30V V GS =10V td(off) tf tr td(on) V DS =10V Tc= --25 25°C 75°C V GS =0 Tc=75 --25 f=1MHz Ciss Coss Crss V DS =10V ID =1mA

No.7502-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2003. Specifications and information herein are subject to change without notice. PS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Tc=25°C Single pulse Ambient Tamperature, Ta -- °C Allowable Power Dissipation, PD -- W Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W A S O 100 1.0 0.1 23 5 7 23 5 7 23 5 70.1 1.0 10 100 IT06207 20 40 0.5 1.5 1.0 80 100 120 2.0 2.5 140 160 PD -- Ta IT06208 Operation in this area is limited by RDS (on). ID =18A IDP =72A DC operation <10µs 10µs100 µs 10ms 100ms 1ms 20 40 60 80 100 120 140 160 PD -- Tc IT06209