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R DS(on)1 =4 4m MAX. (V GS =1 0V ,I D =1 0A ) R DS(on)2 =7 8m MAX. (V GS =4 . 0V ,I D =1 0A ) Low C iss iss = 760 pF TYP. Built-in gate protection diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage V DSS 60 V Gate to source voltage V GSS 20 V I D 20 A I dp 50 A Power dissipation T C =25 T A =25 1.0 Channel temperature T ch 150 Storage temperature T stg - 5 5t o+ 1 5 0 *P W s,Duty Cycle Drain current P D W Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain cut-off current I DSS V DS =60V,V GS =0 10 A Gate leakage current I GSS V GS 20V,V DS A Gat cutoff voltage V GS(off) V DS =10V,I D =1mA 1.5 2.0 2.5 V Forward transfer admittance Y fs V DS =10V,I D =10A 5 10 S R DS(on)1 V GS =10V,I D =10A 35 44 m R DS(on)2 V GS =4.0V,I D =10A 54 78 m Input capacitance C iss 760 pF Output capacitance C oss 150 pF Reverse transfer capacitance C rss 71 pF Turn-on delay time t on 13 ns Rise time t r 170 ns Turn-off delay time t off 43 ns Fall time tf 34 ns Total Gate Charge Q G 17 nC Gate to Source Charge Q GS 3.0 nC Gate to Drain Charge Q GD 4.7 nC V DS =10V,V GS =0,f=1MHZ I D =10A,V GS(on) =10V,R G =10 DD =30V Drain to source on-state resistance I D =20 A, V DD =4 8V ,V GS =1 0V 4008-318-123sales@twtysemi.com 1 of 1http://www.twtysemi.com SMD Type ICSMD TypeSMD Type ICSMD TypeSMD Type ICSMD TypeSMD Type ICSMD TypeSMD Type ICSMD TypeSMD TypeSMD TypeSMD Type ICSMD TypeSMD TypeSMD TypeSMD TypeSMD Type Product specification