KSC2330 TYSEMI | Alldatasheet
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Technical content
TO – 92L 1. EMITTER 2. COLLECTOR 3. BASE TO-92L Plastic-Encapsulate Transistors KSC2330 TRANSISTOR (NPN)
FEATURES
z High Collector-Emitter Breakdown Voltage z Low Transition Frequency MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =100µA,I E =0 300 V Collector-emitter breakdown voltage V (BR)CEO I C =5mA,I B =0 300 V Emitter-base breakdown voltage V (BR)EBO I E =100µA,I C =0 7 V Collector cut-off current I CBO V CB =200V,I E =0 0.1 μA Emitter cut-off current I EBO V EB =6V,I C =0 0.1 μA DC current gain h FE V CE =10V, I C =20mA 40 240 Collector-emitter saturation voltage V CE(sat) I C =10mA,I B =1mA 0.5 V Collector output capacitance C ob V CB =10V,I E =0, f=1MHz 4 pF Transition frequency f T V CE =30V,I C =10mA
50 MHz
RANGE 40-80 70-140 120-240 Symbol Parameter Value Unit V CBO Collector-Base Voltage 300 V V CEO Collector-Emitter Voltage 300 V V EBO Emitter-Base Voltage 7 V I C Collector Current 0.1 A P C Collector Power Dissipation 0.75 W R θJA Thermal Resistance From Junction To Ambient 167 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ 1 of 14008-318-123sales@twtysemi.comhttp://www.twtysemi.com Product specification