K25T120

IKW25T120 INFINEON | Alldatasheet

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^ TrenchStop Series Power Semiconductors 1 Preliminary / Rev. 1 Jul-02 Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

• Approx. 1.0V reduced V CE(sat) and 0.5V reduced VF compared to BUP314D
• Short circuit withstand time – 10 µs
• Designed for : - Frequency Converters - Uninterrupted Power Supply
• Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC VCE(sat),Tj=25°C Tj,max Package Ordering Code IKW25T120 1200V 25A 1.7V 150°C TO-247AC Q67040-S4518 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current TC = 25°C TC = 100°C IC Pulsed collector current, tp limited by Tjmax ICpuls 75 Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C - 75 Diode forward current TC = 25°C TC = 100°C IF Diode pulsed current, tp limited by Tjmax IFpuls 75 A Gate-emitter voltage VGE ±20 V Short circuit withstand time1) VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C tSC 10 µs Power dissipation TC = 25°C Ptot 190 W Operating junction temperature Tj -40...+150 Storage temperature Tstg -55...+150 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 1) Allowed number of short circuits: <1000; time between short circuits: >1s. P-TO-247-3-1 (TO-247AC) G C E

^ TrenchStop Series Power Semiconductors 2 Preliminary / Rev. 1 Jul-02 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case RthJC 0.65 Diode thermal resistance, junction – case RthJCD 1.0 Thermal resistance, junction – ambient RthJA TO-247AC 40 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE =0V, IC =500 µ A 1200 - - Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC =25A Tj =25 °C Tj =125 °C Tj =150 °C 1.7 2.0 2.2 2.2 Diode forward voltage VF VGE =0V, IF =25A Tj =25 °C Tj =125 °C Tj =150 °C 1.7 1.7 1.7 2.2 Gate-emitter threshold voltage VGE(th) IC =1mA, VCE =VGE 5.0 5.8 6.5 V Zero gate voltage collector current ICES VCE =1200V , VGE =0V Tj =25 °C Tj =150 °C 0.25 2.5 mA Gate-emitter leakage current IGES VCE =0V, VGE =20V - - 600 nA Transconductance gfs VCE =20V, IC =25A -1 6- S Integrated gate resistor RGint 8 Ω

^ TrenchStop Series Power Semiconductors 3 Preliminary / Rev. 1 Jul-02 Dynamic Characteristic Input capacitance Ciss - 1860 - Output capacitance Coss -9 6- Reverse transfer capacitance Crss VCE =25V, VGE =0V, f=1MHz -8 2- pF Gate charge QGate VCC =960V, IC =25A VGE =15V - 155 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE TO-247AC - - 13 nH Short circuit collector current1) IC(SC) VGE =15V, tSC ≤ 10 µ s VCC = 600V, Tj = 25 °C - 150 - A Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) -5 0- Rise time tr -3 0- Turn-off delay time td(off) - 560 - Fall time tf -7 0- ns Turn-on energy Eon -2 . 0- Turn-off energy Eoff -2 . 2- Total switching energy Ets Tj =25 °C, VCC =600V, IC =25A VGE =-15/15V, RG =22 Ω , Lσ 2) =180nH, Cσ 2) =39pF Energy losses include “tail” and diode reverse recovery. -4 . 2- mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr - 200 - ns Diode reverse recovery charge Qrr -2 . 3 µ C Diode peak reverse recovery current Irrm -2 1 A Diode peak rate of fall of reverse recovery current during tb di rr /dt Tj =25 °C, VR =600V, I F =25A, di F /dt =800A/ µ s - 390 - A/µs 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 2) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.

^ TrenchStop Series Power Semiconductors 4 Preliminary / Rev. 1 Jul-02 Switching Characteristic, Inductive Load, at Tj=150 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) -5 0- Rise time tr -3 2- Turn-off delay time td(off) - 660 - Fall time tf - 130 - ns Turn-on energy Eon -3 . 0- Turn-off energy Eoff -4 . 0- Total switching energy Ets Tj =150 °C VCC =600V, IC =25A, VGE =-15/15V, RG = 22 Ω , Lσ 1) =180nH, Cσ 1) =39pF Energy losses include “tail” and diode reverse recovery. -7 . 0- mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr - 320 - ns Diode reverse recovery charge Qrr -5 . 2- µ C Diode peak reverse recovery current Irrm -2 9- A Diode peak rate of fall of reverse recovery current during tb di rr /dt Tj =150 °C VR =600V, I F =25A, di F /dt =800A/ µ s - 320 A/µs 1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.

^ TrenchStop Series Power Semiconductors 13 Preliminary / Rev. 1 Jul-02 dimensions symbol [mm] [inch] min max min max A 4.78 5.28 0.1882 0.2079 B 2.29 2.51 0.0902 0.0988 C 1.78 2.29 0.0701 0.0902 D 1.09 1.32 0.0429 0.0520 E 1.73 2.06 0.0681 0.0811 F 2.67 3.18 0.1051 0.1252 G 0.76 max 0.0299 max H 20.80 21.16 0.8189 0.8331 K 15.65 16.15 0.6161 0.6358 L 5.21 5.72 0.2051 0.2252 M 19.81 20.68 0.7799 0.8142 N 3.560 4.930 0.1402 0.1941 ∅ P 3.61 0.1421 Q 6.12 6.22 0.2409 0.2449 TO-247AC

^ TrenchStop Series Power Semiconductors 14 Preliminary / Rev. 1 Jul-02 Figure A. Definition of switching times Figure B. Definition of switching losses I rrm 90% I rrm 10% Irrm di /dt F t rr I F i,v tQ S Q F t S t F V R di /dt rr Q= Q Q rr S F t= t t rr S F Figure C. Definition of diodes switching characteristics p(t) 12 n T( t )j n n τ TC rr r r rr Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Lσ =180nH and Stray capacity Cσ =39pF.

^ TrenchStop Series Power Semiconductors 15 Preliminary / Rev. 1 Jul-02 Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.