K25N120

SKW25N120_08 INFINEON | Alldatasheet

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Technical content

Power Semiconductors 1 Rev. 2_2 Sep 08 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

• 40lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for: - Motor controls - Inverter - SMPS
• NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC 1 for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE I C Eoff Tj Marking Package SKW25N120 1200V 25A 2.9mJ 150°C K25N120 PG-TO-247-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current TC = 25°C TC = 100°C IC Pulsed collector current, tp limited by Tjmax ICpuls 84 Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C - 84 Diode forward current TC = 25°C TC = 100°C IF Diode pulsed current, tp limited by Tjmax IFpuls 80 A Gate-emitter voltage VGE ±20 V Short circuit withstand time2 VGE = 15V, 100V≤VCC ≤1200V, Tj ≤ 150°C tSC 10 µs Power dissipation TC = 25°C Ptot 313 W Operating junction and storage temperature Tj , Tstg -55...+150 Soldering temperature, wavesoldering, 1.6mm (0.063 in.) from case for 10s Ts 260

1 J-STD-020 and JESD-022

2 Allowed number of short circuits: <1000; time between short circuits: >1s. G C E PG-TO-247-3

Power Semiconductors 2 Rev. 2_2 Sep 08 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case RthJC 0.4 Diode thermal resistance, junction – case RthJCD 1.15 Thermal resistance, junction – ambient RthJA 40 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE =0V, IC =1500 µ A 1200 - - Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC =25A Tj =25 °C Tj =150 °C 2.5 3.1 3.7 3.6 4.3 Diode forward voltage V F VGE =0V, IF =25A Tj =25 °C Tj =150 °C 2.0 1.75 2.5 Gate-emitter threshold voltage VGE(th) IC =1000 µ A, VCE =VGE 3 4 5 V Zero gate voltage collector current ICES VCE =1200V,V GE =0V Tj =25 °C Tj =150 °C 350 1400 µA Gate-emitter leakage current IGES VCE =0V, VGE =20V - - 100 nA Transconductance gfs VCE =20V, IC =25A 2 0 - S Dynamic Characteristic Input capacitance Ciss - 2150 2600 Output capacitance Coss - 260 310 Reverse transfer capacitance Crss VCE =25V, VGE =0V, f=1MHz - 110 130 pF Gate charge QGate VCC =960V, IC =25A VGE =15V - 225 300 nC Internal emitter inductance Measured 5mm (0.197 in.) from case LE - nH Short circuit collector current1) IC(SC) VGE =15V, tSC ≤ 10 µ s 100V ≤ VCC ≤ 1200V, Tj ≤ 150 °C - 240 - A 1) Allowed number of short circuits: <1000; time between short circuits: >1s

Power Semiconductors 3 Rev. 2_2 Sep 08 Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions Min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 45 60 Rise time tr - 40 52 Turn-off delay time td(off) - 730 950 Fall time tf - 30 39 ns Turn-on energy Eon - 2.2 2.9 Turn-off energy Eoff - 1.5 2.0 Total switching energy Ets Tj =25 °C, VCC =800V, IC =25A, VGE =15/0V, RG =22 Ω , Lσ 1) =180nH, Cσ 1) =40pF Energy losses include “tail” and diode reverse recovery. - 3.7 4.9 mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF ns Diode reverse recovery charge Qrr - 1.0 µC Diode peak reverse recovery current Irrm - 20 A Diode peak rate of fall of reverse recovery current during tF di rr /dt Tj =25 °C, VR =800V, I F =25A, di F /dt =650A/ µ s - 470 A/µs Switching Characteristic, Inductive Load, at Tj=150 °C Value Parameter Symbol Conditions Min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 50 60 Rise time tr - 36 43 Turn-off delay time td(off) - 820 990 Fall time tf - 42 50 ns Turn-on energy Eon - 3.8 4.6 Turn-off energy Eoff - 2.9 3.8 Total switching energy Ets Tj =150 °C VCC =800V, IC =25A, VGE =15/0V, RG =22 Ω , Lσ 1) =180nH, Cσ 1) =40pF Energy losses include “tail” and diode reverse recovery. - 6.7 8.4 mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF 280 ns Diode reverse recovery charge Qrr - 4.3 µC Diode peak reverse recovery current Irrm - 32 A Diode peak rate of fall of reverse recovery current during tF di rr /dt Tj =150 °C VR =800V, I F =25A, di F /dt =750A/ µ s - 130 A/µs 1) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E.

Power Semiconductors 11 Rev. 2_2 Sep 08 5.44 0.55 6.04 5.49 1.68 3.68 4.17 20.82 16.25 15.70 1.05 3.50 19.80 13.10 MIN 1.90 4.90 2.27 1.07 1.85 1.90 0.238 0.216 0.066 0.145 0.164 0.075 0.820 0.640 0.618 0.022 0.193 0.089 0.042 0.073 0.041 0.075 0.138 0.780 0.516 0.68 6.30 6.00 17.65 2.60 5.10 14.15 3.70 21.10 16.03 20.31 1.35 4.47 2.41 5.16 2.53 1.33 2.11 MAX 2.16 0.027 0.214 0.248 0.236 0.695 0.557 0.102 0.201 0.831 0.631 0.053 0.146 0.799 0.176 MIN MAX 0.095 0.203 0.099 0.052 0.083 0.085 7.5mm 5 5 17-12-2007 Z8B00003327 2.87 2.87 0.113 0.113 3.38 3.13 0.133 0.123 M M PG-TO247-3

Power Semiconductors 12 Rev. 2_2 Sep 08 Figure A. Definition of switching times I rrm 90% I rrm 10% I rrm di /dt F t rr I F i,v tQ S Q F t S t F V R di /dt rr Q= Q Q rr S F t= t trr S F + Figure C. Definition of diodes switching characteristics p(t) 12 n T( t )j n n τ TC rr r r rr Figure D. Thermal equivalent circuit Figure B. Definition of switching losses Figure E. Dynamic test circuit Leakage inductance Lσ =180nH, and stray capacity Cσ =40pF.

Power Semiconductors 13 Rev. 2_2 Sep 08 Published by Infineon Technologies AG

81726 Munich, Germany

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