2SK2538 PANASONIC | Alldatasheet
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µ A µ A V V Ω S V pF pF pF ns ns ns ns ˚C/W ˚C/W Symbol I DSS IGSS V DSS V th R DS(on) | Yfs | V DSF C iss C oss C rss td(on) tr tf td(off) R th(ch-c) R th(ch-a) Parameter Drain-Source cut-off current Gate-Source leakage current Drain-Source breakdown voltage Gate threshold voltage Drain-Source ON-resistance Forward transadmittance Diode forward voltage Input capacitance Output capacitance Feedback capacitance Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Channel-Case heat resistance Channel-Atmosphere heat resistance Parameter Drain-Source breakdown voltage Gate-Source voltage Drain current DC Pulse Avalanche energy capability Allowable power TC = 25˚C dissipation Ta= 25˚C Channel temperature Storage temperature Symbol V DSS V GSS ID IDP EAS * PD Tch Tstg Unit V V A A mJ W Power F-MOS FETs 2SK2538 2SK2538 Silicon N-Channel Power F-MOS n Features l Avalanche energy capability guaranteed l High-speed switching l No secondary breakdown n Applications l High-speed switching (switching mode regulator) l For high-frequency power amplification n Absolute Maximum Ratings (Tc = 25˚C) n Electrical Characteristics (Tc = 25˚C) Condition V DS = 200V , VGS = 0 V GS =±30V , VDS = 0 ID =1mA, V GS = 0 V DS =10V , ID =1mA V GS =10V, ID =1A V DS = 25V, ID =1A IDR = 2A, VGS = 0 V DS =10V, VGS = 0, f=1MHz V DD = 200V, ID = 2A V GS =10V, RL=100Ω Min 250 0.5 Typ 1.2 220 Max 100 –1.6 4.17 62.5 Unit : mm 1 : Gate 2 : Drain 3 : Source TO-220 Full Pack Package (a) Rating 250 ±30 150 –55 to +150 * L= 5mH, IL= 2A, VDD = 30V, 1 pulse 10.0–0.2 5.5–0.2 7.5–0.2 16.7–0.3 0.7–0.1 14.0–0.5 Solder Dip 4.0 0.5 +0.2 -0.1 1.4–0.1 1.3–0.2 0.8–0.1 2.54–0.25 5.08–0.5 213 2.7–0.2 4.2–0.2 4.2–0.2 ø3.1–0.1
Area of safe operation (ASO) PD – Ta C iss, C oss, C rss – VDS EAS – Tj ID – VDS ID – VGS R DS(on) – ID | Yfs | – ID td(on), tr, tf, td(off) – ID Power F-MOS FETs 2SK2538 0.01 0.1 100 0.03 0.3 10 100 10003 30 300 Drain-Source voltage VDS (V) Drain current ID (A) Non repetitive pulse TC =25˚C IDP t=1ms t=10ms DC ID t=100ms 0 40 80 120 16020 60 100 140 Ambient temperature Ta (˚C) Allowable power dissipation PD (W ) (1) TC =Ta (2) Without heat sink D =2.0W) (1) (2) 25 50 75 100 125 150 175 Junction temperature Tj (˚C) Avalanche energy capability EAS (mJ) VDD =30V ID =2A 048 1 2 1 6 2 0 Drain voltage V DS (V) Drain current ID (A) TC =25˚C 5.0V 5.5V 6.0V 6.5V 30W 7.0V 8.0V 9.0V VGS =10.0V 02468 1 0 Gate-Source voltage VGS (V) Drain current ID (A) VDS =10V TC =25˚C 012345 Drain current ID (A) Drain-Source ON-resistance RDS(on) (Ω ) TC =100˚C 25˚C VGS =10V 0˚C 012345 100 120 Drain current ID (A) Switching time t (ns) VDD =200V VGS =10V TC =25˚C td(off) tf tr td(on) 0 50 100 150 200 250 1000 100 300 Drain-Source voltage VDS (V) Input capacitance, Output capacitance, C iss, Coss, Crss (pF)Feedback capacitance f=1MHz TC =25˚C C iss C oss C rss 012345 Drain current ID (A) Forward transadmittance | Yfs | (S) VDS =25V TC =25˚C
R th – tP Power F-MOS FETs 2SK2538 0.1 100 1000 10–4 10–3 10–2 10–1 11 0 1 0 2 103 104 Pulse width tP (s) Thermal resistance Rth (˚C/W) (1) (2) Notes: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A(2W) and without heat sink (2) PT=10V × 1.0A(10W) and with a 100 × 100 × 2mm Al heat sink