2SK2464 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Low ON resistance.
  • Ultrahigh-speed switching.
  • Enables simplified fabrication, high-density mound- ing, and miniaturization in end products due to the surface mountable package. Electrical Characteristics at Ta = 25˚C 1 : Gate 2 : Source 3 : Drain SANYO : ZP Tc=25˚C Continued on next page. PW £10ms, duty cycle£1% retemaraPl obmySs noitidnoCs gnitaRt inU egatloVecruoS-ot-niarDV SSD 03V egatloVecruoS-ot-etaGV SSG 02±V )CD(tnerruCniarDI D 54A )esluP(tnerruCniarDI PD 081A noitapissiDrewoPelbawollAP D 05W erutarepmeTlennahCh cT 051 erutarepmeTegarotSg tsT 051+ot55– retemaraPl obmySs noitidnoC sgnitaR tinU nimp ytx am egatloVnwodkaerBecruoS-ot-niarDV SSD)RB( ID V,Am1= SG 0=0 3V tnerruCniarDegatloVetaGoreZI SSD V SD V,V03= SG 0=0 01A µ tnerruCegakaeLecruoS-ot-etaGI SSG V SG V,V02±= SD 0=0 01±A n egatloVffotuCV )ffo(SG V SD I,V01= D Am1=2 4 V ecnattimdArefsnarTdrawroF| sfy|V SD I,V01= D A22=0 20 3S ecnatsiseRetatS-nOecruoS-ot-niarDcitatSR SD )no(I D V,A22= SG V01=5 .82 1m W ecnaticapaCtupnI 1ssiCV SD zHM1=f,V0=0 5730 034F p 2ssiCV SD zHM1=f,V01=0 072F p ecnaticapaCtuptuOs soCV SD zHM1=f,V01=0 032F p ecnaticapaCrefsnarTesreveRs srCV SD zHM1=f,V01=0 54F p

No.6475–2/3 Switching Time Test Circuit PW =10µs D.C.≤1% 10V Vin P. G 50Ω G S ID =22A R L=0.68Ω VDD =15V VOUT 2SK2464 Vin D Continued from preceding page. retemaraPl obmySs noitidnoC sgnitaR tinU nimp ytx am emiTyaleDNO-nruTt )no(d tiucriCtseTdeificepseeS5 4s n emiTesiRt r tiucriCtseTdeificepseeS0 53s n emiTyaleDFFO-nruTt )ffo(d tiucriCtseTdeificepseeS0 01s n emiTllaFt f tiucriCtseTdeificepseeS0 01s n egatloVdrawroFedoiDV DS IS V,A54= SG 0=0 .15 .1V 1.0 23 557 7 10 22 35 7 100 100 ‰yfs‰ -- ID 25°C 75°C Tc=--25 4 6 8 1 01 21 41 61 8 R DS (on) -- VGS ID =22A Tc=25°C 02468 1 0 100 ID -- VGS --25 V DS =10V °CTc=75 02468 1 0 ID -- VDS 100 V GS =10V 6.5V 6.0V 5.5V 5.0V 4.5V IT00772 IT00773 IT00774 IT00775 Drain Current, ID –A Drain Current, ID –A Drain-to-Source Voltage, VDS –V Gate-to-Source Voltage, VGS –V Gate-to-Source Voltage, VGS –V Static Drain-to-Source On-State Resistance, RDS (on) – mΩ Drain Current, ID –A Forward Transfer Admitance, | yfs |–S

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2000. Specifications and information herein are subject to change without notice. 2SK2464 PS No.6475–3/3 0 20 40 60 80 100 120 160 140 PD -- Tc 7 1.0 325 55 1072 3 1.0 100 A S O 100µs 10µs 1ms 10ms 100msDC operation IDP =180A ID =45A 0.1 23 557 7 1.0 23 5 7 10 23 5 1000 100 SW Time -- ID V DD =15V V GS =10V tf td(off) tr td(on) 0 5 10 15 20 30 25 100 1000 10000 Ciss, Coss, Crss -- VDS f=1MHz Ciss Coss Crss IT00776 IT00777 IT00778 IT00779 Operation in this area is limited by RDS (on) Ciss, Coss, Crss – pF Drain-to-Source Voltage,VDS –V Drain Current, ID –A Switching Time, SW Time – ns Drain-to-Source Voltage,VDS –V Drain Current, ID –A Tc=25˚C Single pulse Case Temperature, Tc –°C Allowable Power Dissipation, PD –W