2SK241_V01 TOSHIBA | Alldatasheet
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK241 FM Tuner, VHF and RF Amplifier Applications /Gb7/G20Low reverse transfer capacitance: Crss = 0.035 pF (typ.) /Gb7/G20Low noise figure: NF = 1.7dB (typ.) /Gb7/G20High power gain: GPS = 28dB (typ.) /Gb7/G20Recommend operation voltage: 5~15 V Maximum Ratings (Ta /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Rating Unit Drain-source voltage V DS 20 V Gate-source voltage V GS /Gb15/G20 V Drain current I D 30 mA Drain power dissipation P D 200 mW Channel temperature T ch 125 °C Storage temperature range T stg /G2d55~125 °C Electrical Characteristics (Ta /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS VDS /G3d 0, VGS /G3d /Gb15 V /Gbe /Gbe /Gb150 nA Drain-source voltage V DSX V GS /G3d /G2d4 V, ID /G3d 100 /G6dA 20 /Gbe /Gbe V Drain current I DSS V DS /G3d 10 V, VGS /G3d 0 (Note) 1.5 /Gbe 14 mA Gate-source cut-off voltage V GS (OFF) V DS /G3d 10 V, ID /G3d 100 /G6dA /Gbe /Gbe /G2d2.5 V Forward transfer admittance /GefYfs/Gef V DS /G3d 10 V, VGS /G3d 0, f /G3d 1 kHz /Gbe/G2010 /Gbe mS Input capacitance C iss /Gbe/G203.0 /Gbe pF Reverse transfer capacitance C rss VDS /G3d 10 V, VGS /G3d 0, f /G3d 1 MHz /Gbe/G200.035 0.050 pF Power gain G ps /Gbe/G2028 /Gbe/G20dB Noise figure NF VDS /G3d 10 V, VGS /G3d 0, f /G3d 100 MHz (Figure 1) /Gbe 1.7 3.0 dB Unit: mm JEDEC ― JEITA ― TOSHIBA 2-4E1D Weight: 0.13 g (typ.)
L1: 1.0 mm/G66 silver plated copper wire 4.0 T, 8 mm/G66 ID TAP at 1.0 T from coil end L2: 1.0 mm/G66 silver plated copper wire 3.0 T, 8 mm/G66 ID, 10 mm length Figure 1 G ps, NF Test Circuit
/Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EAARESTRICTIONS ON PRODUCT USE