K2128

2SK2128 PANASONIC | Alldatasheet

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unit: mm 2SK2128 Silicon N-Channel Power F-MOS FET n Features l Avalanche energy capacity guaranteed: EAS > 15mJ l V GSS = ±20V guaranteed l High-speed switching: tf = 35ns l No secondary breakdown n Applications l Contactless relay l Diving circuit for a solenoid l Driving circuit for a motor l Control equipment l Switching power supply 1: Gate 2: Drain 3: Source n Electrical Characteristics (TC = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Thermal resistance between channel and case Symbol IDSS IGSS V DSS V th R DS(on) | Yfs | V DSF C iss C oss C rss td(on) tr tf td(off) R th(ch-c) Conditions V DS = 640V, VGS = 0 V GS = ±30V, VDS = 0 ID = 1mA, VGS = 0 V DS = 25V, ID = 1mA V GS = 10V, ID = 1A V DS = 25V, ID = 1A IDR = 2A, VGS = 0 V DS = 20V, VGS = 0, f = 1MHz V GS = 10V, ID = 1A V DD = 200V, RL = 200W min 800 0.7 typ 4.8 1.1 350 max 0.1 -1.3 3.125 Unit mA mA V V W S V pF pF pF ns ns ns ns °C/W n Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature DC Pulse T C = 25°C Ta = 25°C Symbol V DSS V GSS ID IDP EAS * PD Tch Tstg Ratings 800 ±30 150 -55 to +150 Unit V V A A mJ W * L = 5mH, IL = 2.45A, VDD = 50V, 1 pulse 9.9±0.3 231 4.6±0.2 2.9±0.2 2.6±0.1 2.54±0.2 0.75±0.1 1.2±0.15 5.08±0.4 15.0±0.313.7 +0.5 –0.2 f3.2±0.1 3.0±0.2 8.0±0.24.1±0.2 Solder Dip 1.45±0.15 0.7±0.1

Area of safe operation (ASO) P D ¾ Ta EAS ¾ Tj ID ¾ VDS ID ¾ VGS V th ¾ TC R DS(on) ¾ ID | Yfs | ¾ ID C iss, Coss, Crss ¾ VDS 0 1 02 03 04 05 06 0 VGS =15V 10V 5.5V 6.5V TC =25˚C Drain to source voltage VDS (V) Drain current ID (A) 30 12 4 0.5 1.0 1.5 2.0 VDS =25V TC =25˚C Drain current ID (A) Forward transfer admittance |Yfs| (S) 012345 VGS =10V 15V Drain current ID (A) Drain to source ON-resistance RDS(on) (W ) 01 2 10826 4 TC =0˚C 25˚C 100˚C 125˚C VDS =25V Gate to source voltage VGS (V) Drain current ID (A) 0 50 100 150 200 100 1000 10000 C iss C oss C rss f=1MHz TC =25˚C Drain to source voltage VDS (V) Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 02 0 40 60 80 100 120 140 160 (1) TC =Ta (2) Without heat sink (PD =2W) (1) (2) Ambient temperature Ta (˚C) Allowable power dissipation PD (W ) 1 10 100 1000 0.01 0.1 100 Non repetitive pulse TC =25˚C t=100ms 10ms 100ms 1ms DC IDP ID Drain to source voltage VDS (V) Drain current ID (A) 25 50 75 100 125 150 175 VDD =50V ID =2A Junction temperature Tj (˚C) Avalanche energy capacity EAS (mJ ) 0 25 50 75 100 125 150 VDS =25V ID =1mA Case temperature TC (˚C) Gate threshold voltage Vth (V)

V DS , VGS ¾ Qg td(on), tr, tf, td(off) ¾ ID R th(t) ¾ t 100 120 td(off) tf tr td(on) VDD =200V VGS =10V TC =25˚C Drain current ID (A) Switching time td(on),tr,tf,td(off) (ns) 10–4 10–3 10–2 10–1 11 01 0 2 103 10–2 10–1 102 (2) d=1 0.5 0.1 0.05 (1) 0.01 T tP T tP d= Notes: Rth was measured at Ta=25˚C and under natural convection. (1) without heat sink (2) with a 100 · 100 · 2mm Al heat sink Time t (s) Thermal resistance Rth(t) (˚C/W) 0 4 8 12 16 20 24 100 200 300 400 500 600 700 800 VGSVDS ID =2A TC =25˚C Gate to source voltage VGS (V) Gate charge amount Qg (nC ) Drain to source voltage VDS (V)