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IKP20N60T TRENCHSTOP™ Series IFAG IPC TD VLS 1 Rev. 2.8 18.05.2015 Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Designed for : - Frequency Converters - Uninterrupted Power Supply TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low VCE(sat) Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel Emitter Controlled HE diode Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Package IKP20N60T 600V 20A 1.5V 175C K20T60 PG-TO220-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage, Tj ≥ 25C VCE 600 V DC collector current, limited by Tjmax TC = 25C TC = 100C IC A Pulsed collector current, tp limited by Tjmax IC p ul s 60 Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs - 60 Diode forward current, limited by Tjmax TC = 25C TC = 100C IF Diode pulsed current, tp limited by Tjmax IF p ul s 60 Gate-emitter voltage VGE 20 V Short circuit withstand time2) VGE = 15V, VCC 400V, Tj 150C tSC 5 s Power dissipation TC = 25C Pt o t 166 W Operating junction temperature Tj -40...+175 C Storage temperature Ts t g -55...+150 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s. G C E PG-TO220-3
IKP20N60T TRENCHSTOP™ Series IFAG IPC TD VLS 2 Rev. 2.8 18.05.2015 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case Rt h J C 0.9 K/W Diode thermal resistance, junction – case Rt h J C D 1.5 Thermal resistance, junction – ambient Rt h J A 62 Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value Unit min. Typ. max. Static Characteristic Collector-emitter breakdown voltage V( B R ) C E S VGE =0V, IC =0. 2mA 600 - - V Collector-emitter saturation voltage VC E ( s a t ) VGE = 15V, IC =20 A Tj =25 C Tj =1 75C 1.5 1.9 2.05 Diode forward voltage VF VGE =0V, IF =20 A Tj =25 C Tj =1 75C 1.65 1.6 2.05 Gate-emitter threshold voltage VG E ( t h) IC =290µ A, VCE =VGE 4.1 4.9 5.7 Zero gate voltage collector current IC E S VCE =600V , VGE =0V Tj =25 C Tj =1 75C 1500 µA Gate-emitter leakage current IG E S VCE =0V, VGE =20V - - 100 nA Transconductance gfs VCE =20V, IC =20 A - 11 - S Integrated gate resistor RG i n t - Ω Dynamic Characteristic Input capacitance Ci s s VCE =25V, VGE =0V, f=1MHz - 1100 - pF Output capacitance Co s s - 71 - Reverse transfer capacitance Cr s s - 32 - Gate charge QG a t e VCC =48 0V, IC =20 A VGE =15V - 120 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE PG -TO220 -3 - 7 - nH Short circuit collector current1) IC ( S C ) VGE =15V, tSC 5s VC C = 400V, Tj 150C - 183.3 - A 1) Allowed number of short circuits: <1000; time between short circuits: >1s.
IKP20N60T TRENCHSTOP™ Series IFAG IPC TD VLS 3 Rev. 2.8 18.05.2015 Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions Value Unit min. Typ. max. IGBT Characteristic Turn-on delay time td ( o n ) Tj=25 C, VCC =400 V, IC =20 A, VGE =0/15V, rG =12 , L=131 nH, C=31 pF L, C from Fig. E Energy losses include “tail” and diode reverse recovery. - 18 - ns Rise time tr - 14 - Turn-off delay time td ( o f f ) - 199 - Fall time tf - 42 - Turn-on energy Eon - 0.31 - mJ Turn-off energy Eo f f - 0.46 - Total switching energy Ets - 0.77 - Anti-Parallel Diode Characteristic Diode reverse recovery time trr Tj =25 C, VR =400V, IF =20 A, di F /dt =88 0A/ s - 41 - ns Diode reverse recovery charge Qrr - 0.31 - µC Diode peak reverse recovery current Ir r m - 13.3 - A Diode peak rate of fall of reverse recovery current during tb di rr /dt - 711 - A/s Switching Characteristic, Inductive Load, at Tj=175 C Parameter Symbol Conditions Value Unit min. Typ. max. IGBT Characteristic Turn-on delay time td ( o n ) Tj=17 5C, VCC =400 V, IC =20 A, VGE =0/15V, rG =12 , L=131 nH, C=31 pF L, C from Fig. E Energy losses include “tail” and diode reverse recovery. - 18 - ns Rise time tr - 18 - Turn-off delay time td ( o f f ) - 223 - Fall time tf - 76 - Turn-on energy Eon - 0.51 - mJ Turn-off energy Eo f f - 0.64 - Total switching energy Ets - 1.15 - Anti-Parallel Diode Characteristic Diode reverse recovery time trr Tj =1 75C VR =400V, IF =20 A, di F /dt =88 0A/ s - 176 - ns Diode reverse recovery charge Qrr - 1.46 - µC Diode peak reverse recovery current Ir r m - 18.9 - A Diode peak rate of fall of reverse recovery current during tb di rr /dt - 467 - A/s
IKP20N60T TRENCHSTOP™ Series IFAG IPC TD VLS 11 Rev. 2.8 18.05.2015 PG-TO220-3
IKP20N60T TRENCHSTOP™ Series IFAG IPC TD VLS 12 Rev. 2.8 18.05.2015 I r r m 90% I r r m 10% I r r m di /dt F t r r I F i,v tQ S Q F t S t F V R di /dt r r Q =Q Q r r S F t =t t r r S F Figure C. Definition of diodes switching characteristics p(t) 1 2 n T (t)j n n T C r r r r rr Figure D. Thermal equivalent circuit Figure A. Definition of switching times Figure B. Definition of switching losses
IKP20N60T TRENCHSTOP™ Series IFAG IPC TD VLS 13 Rev. 2.8 18.05.2015 Published by Infineon Technologies AG
81726 Munich, Germany
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