K20N60

SKW20N60_08 INFINEON | Alldatasheet

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Technical content

1 Rev. 2_2 Sep 08 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

• 75% lower Eoff compared to previous generation combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for: - Motor controls - Inverter
• NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE I C VCE(sat) Tj Marking Package SKW20N60 600V 20A 2.4V 150°C K20N60 PG-TO-247-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 600 V DC collector current TC = 25°C TC = 100°C IC Pulsed collector current, tp limited by Tjmax ICpuls 80 Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C - 80 Diode forward current TC = 25°C TC = 100°C IF Diode pulsed current, tp limited by Tjmax IFpuls 80 A Gate-emitter voltage VGE ±20 V Short circuit withstand time2 VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C tSC 10 µs Power dissipation TC = 25°C Ptot 179 W Soldering temperature wavesoldering, 1.6 mm (0.063 in.) from case for 10s Ts 260 °C Operating junction and storage temperature Tj , Tstg -55...+150 °C

1 J-STD-020 and JESD-022

2 Allowed number of short circuits: <1000; time between short circuits: >1s. G C E PG-TO-247-3

2 Rev. 2_2 Sep 08 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case RthJC 0.7 Diode thermal resistance, junction – case RthJCD 1.3 Thermal resistance, junction – ambient RthJA 40 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. Typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE =0V, IC =500 µ A 600 - - Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC =20A Tj =25 °C Tj =150 °C 1.7 2.4 2.4 2.9 Diode forward voltage V F VGE =0V, IF =20A Tj =25 °C Tj =150 °C 1.2 1.4 1.25 1.8 1.65 Gate-emitter threshold voltage VGE(th) IC =700 µ A, VCE =VGE 3 4 5 V Zero gate voltage collector current ICES VCE =600V, VGE =0V Tj =25 °C Tj =150 °C 2500 µA Gate-emitter leakage current IGES VCE =0V, VGE =20V - - 100 nA Transconductance gfs VCE =20V, IC =20A - 14 - S Dynamic Characteristic Input capacitance Ciss - 1100 1320 Output capacitance Coss - 107 128 Reverse transfer capacitance Crss VCE =25V, VGE =0V, f=1MHz - 63 76 pF Gate charge QGate VCC =480V, IC =20A VGE =15V - 100 130 nC Internal emitter inductance measured 5mm (0.197 in.) from case LE - 13 - nH Short circuit collector current1) IC(SC) VGE =15V, tSC ≤ 10 µ s VCC ≤ 600V, Tj ≤ 150 °C - 200 - A 1) Allowed number of short circuits: <1000; time between short circuits: >1s.

3 Rev. 2_2 Sep 08 Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 36 46 Rise time tr - 30 36 Turn-off delay time td(off) - 225 270 Fall time tf - 54 65 ns Turn-on energy Eon - 0.44 0.53 Turn-off energy Eoff - 0.33 0.43 Total switching energy Ets Tj =25 °C, VCC =400V, IC =20A, VGE =0/15V, RG =16 Ω , Lσ 1) =180nH, Cσ 1) =900pF Energy losses include “tail” and diode reverse recovery. - 0.77 0.96 mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF 300 270 ns Diode reverse recovery charge Qrr - 490 - nC Diode peak reverse recovery current Irrm - 5.5 - A Diode peak rate of fall of reverse recovery current during tb di rr /dt Tj =25 °C, VR =200V, I F =20A, di F /dt =200A/ µ s - 180 - A/µs Switching Characteristic, Inductive Load, at Tj=150 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 36 46 Rise time tr - 30 36 Turn-off delay time td(off) - 250 300 Fall time tf - 63 76 ns Turn-on energy Eon - 0.67 0.81 Turn-off energy Eoff - 0.49 0.64 Total switching energy Ets Tj =150 °C VCC =400V, IC =20A, VGE =0/15V, RG =16 Ω , Lσ 1) =180nH, Cσ 1) =900pF Energy losses include “tail” and diode reverse recovery. - 1.12 1.45 mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF 410 365 ns Diode reverse recovery charge Qrr - 1270 - nC Diode peak reverse recovery current Irrm - 8.5 - A Diode peak rate of fall of reverse recovery current during tb di rr /dt Tj =150 °C VR =200V, I F =20A, di F /dt =200A/ µ s - 200 - A/µs 1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.

11 Rev. 2_2 Sep 08 5.44 0.55 6.04 5.49 1.68 3.68 4.17 20.82 16.25 15.70 1.05 3.50 19.80 13.10 MIN 1.90 4.90 2.27 1.07 1.85 1.90 0.238 0.216 0.066 0.145 0.164 0.075 0.820 0.640 0.618 0.022 0.193 0.089 0.042 0.073 0.041 0.075 0.138 0.780 0.516 0.68 6.30 6.00 17.65 2.60 5.10 14.15 3.70 21.10 16.03 20.31 1.35 4.47 2.41 5.16 2.53 1.33 2.11 MAX 2.16 0.027 0.214 0.248 0.236 0.695 0.557 0.102 0.201 0.831 0.631 0.053 0.146 0.799 0.176 MIN MAX 0.095 0.203 0.099 0.052 0.083 0.085 7.5mm 5 5 17-12-2007 Z8B00003327 2.87 2.87 0.113 0.113 3.38 3.13 0.133 0.123 M M PG-TO247-3

12 Rev. 2_2 Sep 08 Figure A. Definition of switching times Figure B. Definition of switching losses I rrm 90% I rrm 10% I rrm di /dt F t rr I F i,v tQ S Q F t S t F V R di /dt rr Q= Q Q rr S F t= t trr S F + Figure C. Definition of diodes switching characteristics p(t) 12 n T( t )j n n τ TC rr r r rr Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Lσ =180nH and Stray capacity Cσ =900pF. Published by Infineon Technologies AG,

13 Rev. 2_2 Sep 08 Published by Infineon Technologies AG

81726 Munich, Germany

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