2SK1606 PANASONIC | Alldatasheet
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unit: mm 2SK1606 Silicon N-Channel Power F-MOS FET n Features l High avalanche energy capacity l V GSS : 30V guaranteed l Low R DS(on), high-speed switching characteristic n Applications l High-speed switching (switching power supply) l For high-frequency power amplification n Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature DC Pulse T C = 25°C Ta = 25°C Symbol V DSS V GSS ID IDP EAS * PD Tch Tstg Ratings 450 ±30 ±16 130 150 -55 to +150 Unit V V A A mJ W n Electrical Characteristics (TC = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Avalanche energy capacity Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Turn-on time Fall time Turn-off time (delay time) Symbol IDSS IGSS V DSS EAS * V th R DS(on) | Yfs | C iss C oss C rss ton tf td(off) Conditions V DS = 360V, VGS = 0 V GS = ±30V, VDS = 0 ID = 1mA, VGS = 0 L = 4.1mH, ID = 8A, VDD = 50V V DS = 25V, ID = 1mA V GS = 10V, ID = 4A V DS = 25V, ID = 4A V DS = 20V, VGS = 0, f = 1MHz V GS = 10V, ID = 4A V DD = 150V, RL = 37.5W min 450 130 typ 0.56 1300 160 150 max 0.1 0.75 Unit mA mA V mJ V W S pF pF pF ns ns ns * Single pulse * Avalanche energy capacity test circuit 10.0±0.2 5.5±0.2 7.5±0.2 16.7±0.3 0.7±0.1 14.0±0.5 Solder Dip 4.0 0.5 +0.2 –0.1 1.4±0.1 1.3±0.2 0.8±0.1 2.54±0.25 5.08±0.5 213 2.7±0.2 4.2±0.2 4.2±0.2 f3.1±0.1 1: Gate 2: Drain 3: Source EIAJ: SC-67 TO-220 Full Pack Package (a) VDS ID L D rain Gate Source R GS C VDD PVS
ID ¾ VDS | Yfs | ¾ ID R DS(on) ¾ ID ID ¾ VGS C iss, Coss, Crss ¾ VDS ton, tf, td(off) ¾ ID PD ¾ Ta Area of safe operation (ASO) EAS ¾ Tj 2SK1606 0 1 02 03 04 05 06 0 5.5V 15V 10V VGS =8V PD =50W TC =25˚C Drain to source voltage VDS (V) Drain current ID (A) 0 4 8 12 16 20 24 VDS =25V TC =25˚C Drain current ID (A) Forward transfer admittance |Yfs| (S) 0 4 8 12 16 20 24 0.2 0.4 0.6 0.8 1.0 1.2 TC =25˚C VGS =10V 15V Drain current ID (A) Drain to source ON-resistance RDS(on) (W ) 01 210 826 4 VDS =25V TC =25˚C Gate to source voltage VGS (V) Drain current ID (A) 0 40 80 120 160 200 240 100 300 1000 3000 10000 TC =25˚C C iss C oss C rss Drain to source voltage VDS (V) Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 01 210 826 4 100 200 300 400 500 600 td(off) tf ton VDD =150V VGS =10V TC =25˚C Drain current ID (A) Switching time ton,tf,td(off) (ns) 02 0 40 60 80 100 120 140 160 (1) TC =Ta (2) Without heat sink (PD =2.0W) (1) (2) Ambient temperature Ta (˚C) Allowable power dissipation PD (W ) 1 10 100 10003 30 300 0.01 0.1 100 0.03 0.3 Non repetitive pulse TC =25˚C IDP DC 10ms ID t=1ms Drain to source voltage VDS (V) Drain current ID (A) 25 50 75 100 125 150 175 120 160 200 240 ID =8A VDD =50V Junction temperature Tj (˚C) Avalanche energy capacity EAS (mJ )