2SK1459 SANYO | Alldatasheet

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Technical content

Features

+ Low ON-state resistance. + Ultarahigh-speed switching. + Micaless package facilitating mounting. Absolute Maximum Ratings at Ta=25°C unit Drain-to-Source Voltage Vpss 900 Vv Gate-to-Source Voltage Voss +30 Vv Drain Current(DC) Ip 25 A Drain Current(Pulse) Ipp PWE10ys, duty cycleS1% 5 OA Allowable Power Dissipation Pp 20 W Te=25°C 30 OW . Channel Temperature Tch 150 °C Storage Temperature Tatg —55to+150 °C Electrical Characteristics at Ta=25°C min typ max unit D-Source Breakdown Voltage Visrypss Ip=1mA,Vgg=0 900 Vv Zero-Gate Voltage Drain Current Ipgg Vps=900V,Vgs=0 10 mA Gate-to-Source Leakage Current Iggs Vas=+30V,Vps=0 +100 nA Cutoff Voltage Ves Vps=10V,Ip=1mA 2.0 30 V Forward Transfer Admittance | ¥¢g | Vps=20V Ip=1.5A 0.8 1.5 Ss Beatic Drain-to-Source Rpson) — Ip=1.5A,Vgg=10V 47 60 ON-State Resistance Input Capacitance Ciss Vps=20V,f=1MHz 350 pF Output Capacitance Coss Vps=20V,f=1MHz 150 pF Reverse Transfer Capacitance Cras Vps=20V,f=1MHz 100 pF Turn-ON Delay Time tacon) 15 ns Rise Time ty Ip=1.5A,Vgg=10V 25 ns Turn-OFF Delay Time taco Vpp =200V,Rgs=502 120 ns Fall Time tr 40 ns Diode Forward Voltage Vsp Is=2.5A,Vgg=0 18 #V (Note) Be careful in handling the 25K 1459 because it has no protection diode between gate and source. Switching Time Test Circuit Package Dimensions 2078B (unit : mm) 28oy 516.1 PLW. =a AL | to | PSi==—, ves _| 1330 1.54 J 19 ed Faov OF-—° Your lero ae 4 & 28K1459 16.0 14.0 PG Res ° 1:Gate “ Boa | 5 2:Drain —4 FB 9st sy 3: Source SANYO : TO-220FI(LS) SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 72597TS (KOTO)/6131JN (KOTO) No.3462-1/3

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d ed a | tf JIN | Single pulse Eee | Ni | re terse | V) 6 8 2 16 no u 28 R 10 100 g 1000 Drain-to-Source Voltage, Vpg — V Drain-to-Source Voltage, Vps — V Pp - Pp - Te 26 oD - Ta — 2 _ p-To s : EN 2° i a | | og AN Bis : gat ITN |_| aA’ og a 16 NI A a aoe NX 5 Ne Lal 2 2 = Bo. . oN a " | Le < ' H PS y ef N ti tot tT \\ 0 20 C) 60 Cy 100 120 140160 0 20 Cr) 60 60 100 120° 140 160 Ambient Temperature,Ta ~ °C Case Temperature,Tc — °C I No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace ‘equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shalt ® Accept full responsibility ahd indemnify and defend SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or tigation on SANYO ELECTRIC CO., LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Mi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production, SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 1997, Specifications and information herein are subject to change without notice, erage without motte . No,3462-3/3