K13A50D

TK13A50D_V01 TOSHIBA | Alldatasheet

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( π-MOSⅦ) TK13A50D Switching Regulator Applications

• Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)
• Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Gate-source voltage VGSS ±30 V DC (Note 1) I D 13 Drain current Pulse (Note 1) I DP 52 A Drain power dissipation (Tc = 25°C) PD 45 W Single pulse avalanche energy (Note 2) EAS 390 mJ Avalanche current IAR 13 A Repetitive avalanche energy (Note 3) E AR 4.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the a pplication of high temperature/current/voltage and the significant change in temperature, et c.) may cause this product to decreas e in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc. ) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R th (ch-c) 2.78 °C/W Thermal resistance, channel to ambient R th (ch-a) 62.5 °C/W Note 1: Please use devices on conditions that the channel temperature is below 150°C. Note 2: V DD = 90 V, Tch = 25°C (initial), L = 3.92 mH, RG = 25 Ω, IAR = 13 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. Unit: mm A 1.14 ± 0.15 0.69 ± 0.15 2.54 3.0 3.9 2.8 MAX. 2.54 4.5 ± 0.2 1 2 3 0.64 ± 0.15 2.6 ± 0.1 M Ф0.2 A JEDEC ⎯ JEITA SC-67 TOSHIBA 2-10U1B Weight : 1.7 g (typ.) 1: Gate 2: Drain 3: Source Internal Connection Start of commercial production 2009-01

Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS V GS = ±30 V, VDS = 0 V ⎯ ⎯ ±1 μA Drain cut-off current IDSS V DS = 500 V, VGS = 0 V ⎯ ⎯ 10 μA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 500 ⎯ ⎯ V Gate threshold voltage Vth V DS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON resistance RDS (ON) V GS = 10 V, ID = 6.5 A ⎯ 0.31 0.4 Ω Forward transfer admittance |Yfs| V DS = 10 V, ID = 6.5 A 1.9 7.5 ⎯ S Input capacitance Ciss ⎯ 1800 ⎯ Reverse transfer capacitance Crss ⎯ 9 ⎯ Output capacitance Coss VDS = 25 V, VGS = 0 V, f = 1 MHz ⎯ 190 ⎯ pF Rise time tr ⎯ 40 ⎯ Turn-on time ton ⎯ 80 ⎯ Fall time tf ⎯ 15 ⎯ Switching time Turn-off time t off Duty ≤ 1%, t w = 10 μs ⎯ 110 ⎯ ns Total gate charge Qg ⎯ 38 ⎯ Gate-source charge Qgs ⎯ 24 ⎯ Gate-drain charge Qgd VDD ≈ 400 V, VGS = 10 V, ID = 13 A ⎯ 14 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 13 A Pulse drain reverse current (Note 1) I DRP ⎯ ⎯ ⎯ 52 A Forward voltage (diode) VDSF I DR = 13 A, V GS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr ⎯ 1200 ⎯ ns Reverse recovery charge Qrr IDR = 13 A, VGS = 0 V, dIDR/dt = 100 A/μs ⎯ 13 ⎯ μC Marking Lot No. K13A50D Part No. (or abbreviation code) Note 4 Note 4 : A line under a Lot No. identifies the indication of product Labels [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. RL = 31 Ω 0 V 10 V VGS VDD ≈ 200 V ID = 6.5 A VOUT 50 Ω

0.1 0.1 10 100 VGS = 10 V 0.1 100 0.1 100 10 Tc = −55°C 100 ID = 13 A 6.5 3.3 0 2 4 6 8 6 25 100 Tc = −55°C 0 20 50 40 30 10 6.5 VGS = 5.6 V 6.7 0 2 4 8 10 5.6 VGS = 5.4 V 6.5 6.7 8 Common source Tc = 25°C Pulse Test ID – VDS ID – VDS ID – VGS VDS – VGS Common source Tc = 25°C Pulse Test |Yfs| – ID RDS (ON) – ID Drain-source voltage V DS ( V ) Drain current I D ( A ) Drain-source voltage V DS ( V ) Drain current I D ( A ) Gate-source voltage V GS ( V ) Drain current ID (A) Gate-source voltage V GS ( V ) Drain current I D (A) Drain current I D (A) Drain-source ON resistance RDS (ON) ( Ω) Drain-source voltage V DS (V) Forward transfer admittance ⎪Yfs⎪ (S) Common source Tc = 25°C Pulse Test Common source Tc = 25°C Pulse Test Common source VDS = 10 V Pulse Test Common source VDS = 10 V Pulse Test 6.3

VDD = 100 V 200V 400V 12 300 200 100 −80 −40 0 40 80 120 160 0.1 1000 10000 1 10 100 Ciss Coss Crss 100 0.1 100 -0.8 -1.6 -2 -0.4

1 VGS = 0 V

-1.2 160 −40 0 40 80 120 −80 1.2 0.8 0.6 0.4 0.2 ID = 3.3 A 6.5 1.0 Vth − Tc RDS (ON) − Tc IDR − VDS PD − Tc Common source Tc = 25°C Pulse Test Common source VGS = 0 V f =1MHz Tc = 25°C Common source VDS = 10 V ID = 1mA Pulse Test Case temperature Tc (°C) Gate threshold voltage V th (V) Case temperature Tc (°C) Total gate charge Q g (nC) Capacitance C (pF) Capacitance – VDS Drain-source voltage V DS (V) Drain-source ON resistance RDS (ON) ( Ω) Case temperature Tc (°C) Drain reverse current I DR (A) Drain-source voltage V DS (V) Drain power dissipation P D (W) Drain-source voltage V DS (V) Dynamic input / output characteristics Gate-source voltage V GS (V) Common source ID = 13 A Tc = 25°C Pulse Test Common source VGS = 10 V Pulse Test 0 40 80 120 160 40 10

0.01 0.1 100 10 1000100 0.001 1 ms * 100 μs * VDSS max * Single pulse Tc=25°C Curves must be derated linearly with increase in temperature. ID max (pulse) * ID max (continuous) DC OPERATION Tc = 25°C SAFE OPERATING AREA Drain-source voltage V DS (V) Drain current I D (A) RG = 25 Ω VDD = 90 V, L = 3.92 mH ⎟⎟ −⋅ ⋅ ⋅ = VDDBVDSS BVDSS2I L2 1ΕAS Test circuit Wave form IAR BVDSS VDD V DS −15 V 15 V EAS – Tch Channel temperature (initial) T ch (°C) Avalanche energy E AS ( m J ) 500 400 300 100 25 50 75 100 125 150 200 10μ 0.1 100μ 1m 10m 100m 1 10 0.01 Duty = 0.5 0.2 0.1 0.05 0.02 0.01 T PDM t Duty = t/T Rth (ch-c) = 2.78°C/W rth – tw Pulse width t w (s) Normalized transient thermal impedance rth (t)/Rth (ch-c) SINGLE PULSE 0.001

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