K11A60D

TK11A60D TOSHIBA | Alldatasheet

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( π-MOS VI I) TK11A60D Switching Regulator Applications

• Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)
• Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V DC (Note 1) I D 11 Drain current Pulse (Note 1) I DP 44 A Drain power dissipation (Tc = 25°C) PD 45 W Single pulse avalanche energy (Note 2) EAS 396 mJ Avalanche current IAR 11 A Repetitive avalanche energy (Note 3) E AR 4.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the a pplication of high temperature/current/voltage and the significant change in temperature, et c.) may cause this product to decreas e in the reliability significantly even if the operating conditions (i.e. operat ing temperature/current/voltage, etc. ) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R th (ch-c) 2.78 °C/W Thermal resistance, channel to ambient R th (ch-a) 62.5 °C/W Note 1: Please use devices on conditions that the channel temperature is below 150°C. Note 2: V DD = 90 V, Tch = 25°C (initial), L = 5.73 mH, RG = 25 Ω, IAR = 11 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. Unit: mm JEDEC ⎯ JEITA SC-67 TOSHIBA 2-10U1B Weight: 1.7 g (typ.) 1: Gate 2: Drain 3: Source Internal Connection

Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS V GS = ±30 V, VDS = 0 V ⎯ ⎯ ±1 μA Drain cut-off current IDSS V DS = 600 V, VGS = 0 V ⎯ ⎯ 10 μA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 600 ⎯ ⎯ V Gate threshold voltage Vth V DS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON resistance RDS (ON) V GS = 10 V, ID = 5.5 A ⎯ 0.54 0.65 Ω Forward transfer admittance |Yfs| V DS = 10 V, ID = 5.5 A 1.5 6.0 ⎯ S Input capacitance Ciss ⎯ 1550 ⎯ Reverse transfer capacitance Crss ⎯ 7 ⎯ Output capacitance Coss VDS = 25 V, VGS = 0 V, f = 1 MHz ⎯ 165 ⎯ pF Rise time tr ⎯ 25 ⎯ Turn-on time ton ⎯ 60 ⎯ Fall time tf ⎯ 15 ⎯ Switching time Turn-off time t off Duty ≤ 1%, t w = 10 μs ⎯ 110 ⎯ ns Total gate charge Qg ⎯ 28 ⎯ Gate-source charge Qgs ⎯ 18 ⎯ Gate-drain charge Qgd VDD ≈ 400 V, VGS = 10 V, ID = 11 A ⎯ 10 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 11 A Pulse drain reverse current (Note 1) I DRP ⎯ ⎯ ⎯ 44 A Forward voltage (diode) VDSF I DR = 11 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr ⎯ 1300 ⎯ ns Reverse recovery charge Qrr IDR = 11 A, VGS = 0 V, dIDR/dt = 100 A/μs ⎯ 13 ⎯ μC Marking RL = 36 Ω 0 V 10 V VGS VDD ≈ 200 V ID = 5.5 A VOUT 50 Ω Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. Lot No. Note 4 K11A60D Part No. (or abbreviation code)

0.1 0.1 1 10 100 VGS = 10 V, 15 V 0.1 100 0.1 1 100 100 Tc = −55°C ID = 11 A 4 8 12 16 20 2.8 5.5 0 2 4 6 8 10 Tc = −55°C 100 0 20 50 40 30 10 VGS = 5 V 5.5 6.25 10,8 6.5 6.75 7 0 2 4 6 8 VGS = 4.5V 5.25 5.5 5.75 10,8 6.25 RDS (ON) – ID VDS – VGS ID – VDS ⎪Yfs⎪ – ID ID – VDS FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S) DRAIN CURRENT I D (A) DRAIN CURRENT I D (A) DRAIN-SOURCE VOLTAGE V DS ( V ) DRAIN-SOURCE VOLTAGE V DS ( V ) GATE-SOURCE VOLTAGE V GS ( V ) GATE-SOURCE VOLTAGE V GS (V) DRAIN CURRENT I D (A) DRAIN CURRENT I D (A) ID – VGS COMMON SOURCE Tc = 25°C PULSE TEST COMMON SOURCE Tc = 25°C PULSE TEST COMMON SOURCE VDS = 20 V PULSE TEST COMMON SOURCE Tc = 25°C PULSE TEST COMMON SOURCE VDS = 20 V PULSE TEST COMMON SOURCE Tc = 25°C PULSE TEST DRAIN CURRENT I D (A) DRAIN-SOURCE ON RESISTANCE RDS (ON) ( Ω) DRAIN-SOURCE VOLTAGE V DS (V)

VDD = 100 V 200 400 VGS 0 40 80 120 160 200 −80 −40 0 40 80 120 160 0.1 100 1000 10000 1 10 100 Ciss Coss Crss 0.1 −0.2 100 −0.6 −0.8 −1.2 VGS = 0, −1 V −0.4 −1.0 −1.4160 −40 0 40 80 120 −80 2.5 2.0 1.5 1.0 0.5 ID = 11A 2.8A 5.5A RDS (ON) – Tc Vth – Tc IDR – VDS PD – Tc CAPACITANCE C (pF) DRAIN POWER DISSIPATION PD (W) DRAIN-SOURCE ON RESISTANCE RDS (ON) ( Ω) DRAIN REVERSE CURRENT IDR (A) GATE THRESHOLD VOLTAGE Vth (V) DRAIN-SOURCE VOLTAGE V DS (V) DRAIN-SOURCE VOLTAGE V DS (V) CASE TEMPERATURE Tc (°C) DRAIN-SOURCE VOLTAGE V DS (V) CASE TEMPERATURE Tc (°C) CASE TEMPERATURE Tc (°C) TOTAL GATE CHARGE Q g ( n C ) GATE-SOURCE VOLTAGE V GS (V) COMMON SOURCE VGS = 10 V PULSE TEST COMMON SOURCE Tc = 25°C PULSE TEST COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25°C COMMON SOURCE VDS = 10 V ID = 1 mA PULSE TEST COMMON SOURCE ID = 11 A Tc = 25°C PULSE TEST CAPACITANCE – VDS DYNAMIC INPUT / OUTPUT CHARACTERISTICS

0.01 0.1 100 10 1000100 100 μs * 1 ms * VDSS max 0.001 0.01 10μ 0.1 100μ 1m 10m 100m 1 10 Duty=0.5 0.2 0.1 0.05 0.02 0.01 0.001 SINGLE PULSE −15 V 15 V IAR BVDSS VDD V DS RG = 25 Ω VDD = 90 V, L = 5.73 mH ⎟⎟ −⋅ ⋅ ⋅ = VDDBVDSS BVDSS2I L2 1ΕAS rth – tw T PDM t Duty = t/T Rth (ch-c) = 2.78°C/W EAS – Tch NORMALIZED TRANSIENT THERMAL IMPEDANCE r th (t)/Rth (ch-c) PULSE WIDTH t w (s) SAFE OPERATING AREA DRAIN CURRENT I D (A) DRAIN-SOURCE VOLTAGE V DS (V) *: SINGLE NONREPETITIVE PULSE Tc = 25°C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. ID max (pulsed) * ID max (continuous) AVALANCHE ENERGY EAS ( m J ) CHANNEL TEMPERATURE (INITIAL) T ch (°C) TEST CIRCUIT WAVEFORM DC operation Tc = 25°C 500 400 300 200 100 25 50 75 100 125 150

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