2SK1120 TOSHIBA | Alldatasheet
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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (7-MOSII-*) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Unit in mm | 2] 4 e@ High Forward Transfer Admittance : |Yf.|=4.0S (Typ.) s lam al T/L «| @ Low Lekage Current : Inpgg=300“A (Max.) (Vpg=800V) x W gl 3| > q=I— 2 e@ Enhancement-Mode = : Vth=1.5~3.5V (Vpg=10V, Ip=1mA) FA b = | 4 yy MAXIMUM RATINGS (Ta = 25°C) 102935 | | 3 t CHARACTERISTIC SYMBOL | RATING 5.4520.2, 5.4520.2 Drain-Source Voltage Vpss_[ 1000 [| vd} 2 33 || al. Drain-Gate Voltage (RGg=20k) VDGR 1000 =) Sif sat Gate Source Voltage Voss : [| 8 | Pulse | Ipp [| 4 2. DRAIN (HEAT SINK) Drain Power Dissipation (Te=250) | Pp | 150 | W || 3. source Channel Temperature JEDEC = Storage Temperature Range —55~150 EIAJ SC-65 TOSHIBA 2-16C1B THERMAL CHARACTERISTICS Weight: 4.6g CHARACTERISTIC SYMBOL Thermal Resistance, Channel to Case | Reh (ch-c) | 0-883 [°C/W] Thermal Resistance, Channel to Ambient | Rth(ch-a)| _50 [°C/W] This transistor is an electrostatic sensitive device. Please handle with caution. Q61001EAAZ @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fil due to theit inherent electrical sensitivity and. vulnerability to physical stres, it isthe responsiblity of the buyer, when utlizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide, for the applications of our products. No responsibility is assumed by, TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice 1998-07-24 1/5
ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION [ xan. | rye. Jax. [unr] Cate Leakage Current Vag 200V, Vpg=0v Sse Drain Cutoff Current | Ipgg | Vpg=800V, Vgg=0V P= p= | 300] A] Drain-Source Breakdown Voltage V (BR) DSs|1p=10mA, Vgg=0V [2000 | — | - |v Gate Threshold Voltage Vps=10V, Ip=1mA [ 15[ — | 35] Vv | Drain-Source ON Resistance _| Rpg (ON) | VGg=10V, Ip=4A | — | 15] 18] OQ | Forward Transfer ca fanemiem[a[ wal -[ | Tnput Capacitance = [1800 —] Reverse Transfer vores veges tum [= [| =| Output Capacitance cs —— Ip=4A tov Vout |- | | - | Ves ov L Turn-on Time R 40 ‘ i a Soo
7 VIN : try tp<5ns, Vpp=400V
Turn-off Time | toff Duty =1%, tw=10ps 100 Total Gate Charge (Gate- Q 120 Source Plus Gate-Drain) 8 Vin =400V, Voe=10V, In=8A c Gate-Source Charge [Qe | VDD400V, Vas=10V, In=8A ag] Gate-Drain Miller") Charge [= 0 — SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C) cuanactenisnc —[svunoz | test coxpmion [win [1¥, [wax [uN] A Current Diode Forward Voltage Vpsr_lipr=8A, Vag=0v [P= = stv] MARKING TOSHIBA * Lot Number K1120 TYPE . i Month (Starting from Alphabet A) UY Year (Last Number of the Christian Era) 1998-07-24 2/5
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AEE err | tHitit i {it ttt 0 4 8 12 16 20 24 0 40 80 120 160 200 240 DRAIN-SOURCE VOLTAGE Vpg (V) DRAIN-SOURCE VOLTAGE Vpg (V) Ip - Ves Vps - Vas ‘Tomo |] PL 6 TAI | > [ww fo a it I TT TT te-28 PTLeoeeeSCté‘(]S EE = / 8 ee | =< 12 eit tt ty on eee - TTLLIPLllli os eee 2 | | VEL e FANE PTT EERE Ee H f 5 See Li LBs | t | * COT TT 0 2 4 6 8 10 0 4 8 12 16 20 24 GATE-SOURCE VOLTAGE Vgg (V) GATE-SOURCE VOLTAGE Vgg (V) Yes] — 1 R -I seep a COMMON g FER 3 FEES sate | BCU Toe Fe a ee |
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-80 -40 0 40 80 120 160 0 -04 -08 -12 -16 CASE TEMPERATURE Te (°C) DRAIN-SOURCE VOLTAGE Vpg (V) CAPACITANCE — Vps SWITCHING TIME — Ip 1000. — oo 500; < 5000 RSS EHH 300K Vin : te, tens yoy VIN to og PS toa el ° NOSE [ei : WING tim & NOS a Zz 50) Coo? cw TMNT Hird 100) f= 1M EE rs ° N00 | i A 50 a | 10 Ol 0.3 1 3 10 30 100 05 1 3 10 30 100 DRAIN-SOURCE VOLTAGE Vpg (V) DRAIN CURRENT Ip (A) Vth — Te Pp - Te & TTT TTT FT coms source s FALLLIII IL sft LY lose 2 op NEL Lt HHH s “LONE CCP 5 \\
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g ~ Bote t TN emccceeeo TENT a Zz 8 [Perce] 2 [TTT TErT Nt] -80 -40 i} 40 80 120 160 0 40 80 120 160 200 CASE TEMPERATURE Te (°C) CASE TEMPERATURE Te (°C) 1998-07-24 4/5
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FI = 0 a 0 Pe eB Ot [002 eer PpM a2 eee CM rr tS 28 soft flllsmoue rose | THM TM SS SS EP aa = o.oosL_L TTT 10 100 im 10m) 100m. 1 10 PULSE WIDTH ty (s) DYNAMIC ANRUTLOUIPUT « SAFE OPERATING AREA oT DL. || enon ES g [Rae CT TTY |". Peat coo NIN NUIT pom ttl | ye a NA z | [es | | | 2 4 oF SEH Nome a J 2 L g IKEA : ae 4ee : : TE ON 2 ond lc Fae & NS | S95) puLSE Te=25°C LIT NT | 9 go ag0 deo 80D Curves must be derated CLT | TOTAL GATE CHARGE Qy (nO) 0.1] linearly with increase in Ste | temperature. Vpss MAX. = 0.08 10 30 100 300 1000 DRAIN-SOURCE VOLTAGE Vpg (V) 1998-07-24 5/5