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Technical content

SKP10N60A, SKB10N60A SKW10N60A

1 Sep-02

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

  • 75% lower Eoff compared to previous generation combined with low conduction losses
  • Short circuit withstand time – 10 µs
  • Designed for: - Motor controls - Inverter
  • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
  • Very soft, fast recovery anti-parallel EmCon diode
  • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC VCE(sat) Tj Package Ordering Code SKP10N60A 600V 10A 2.3V 150°C TO-220AB Q67040-S4458 SKB10N60A TO-263AB Q67040-S4459 SKW10N60A TO-247AC Q67040-S4506 Maximum Ratings ValueParameter Symbol SKP10N60A SKB10N60A SKW10N60A Unit Collector-emitter voltage VCE 600 V DC collector current TC = 25°C TC = 100°C IC 10.6 Pulsed collector current, tp limited by Tjmax ICpuls 40 Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C IF Diode pulsed current, tp limited by Tjmax IFpuls 42 A Gate-emitter voltage VGE ±20 V Short circuit withstand time1) VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C tSC 10 µs Power dissipation TC = 25°C Ptot W Operating junction and storage temperature Tj , Tstg -55...+150 °C 1) Allowed number of short circuits: <1000; time between short circuits: >1s. P-TO-220-3-1 (TO-220AB) P-TO-263-3-2 (D²-PAK) (TO-263AB) G C E P-TO-247-3-1 (TO-247AC)

SKP10N60A, SKB10N60A SKW10N60A

2 Sep-02

Max. ValueParameter Symbol Conditions SKP10N60A SKB10N60A SKW10n60A Unit Characteristic IGBT thermal resistance, junction – case RthJC 1.35 Diode thermal resistance, junction – case RthJCD 2.4 Thermal resistance, junction – ambient RthJA TO-220AB TO-247AC SMD version, device on PCB1) RthJA TO-263AB 40 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. Typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE =0V, IC =500 µ A 600 - - Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC =10A Tj =25 °C Tj =150 °C 1.7 2.3 2.4 2.8 Diode forward voltage VF VGE =0V, IF =10A Tj =25 °C Tj =150 °C 1.2 1.4 1.25 1.8 1.65 V Gate-emitter threshold voltage VGE(th) IC =300 µ A, VCE =VGE 345 Zero gate voltage collector current ICES VCE =600V, VGE =0V Tj =25 °C Tj =150 °C 1500 µA Gate-emitter leakage current IGES VCE =0V, VGE =20V - - 100 nA Transconductance gfs VCE =20V, IC =10A -6 . 7- S Dynamic Characteristic Input capacitance Ciss - 550 660 Output capacitance Coss -6 2 7 5 Reverse transfer capacitance Crss VCE =25V, VGE =0V, f=1MHz -4 2 5 1 pF Gate charge QGate VCC =480V, IC =10A VGE =15V -5 2 6 8 n C Internal emitter inductance measured 5mm (0.197 in.) from case LE TO-220AB TO-247AC nH Short circuit collector current2) IC(SC) VGE =15V, tSC ≤ 10 µ s VCC ≤ 600V, Tj ≤ 150 °C - 100 - A 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s.

SKP10N60A, SKB10N60A SKW10N60A

3 Sep-02

Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) -2 8 3 4 Rise time tr -1 2 1 5 Turn-off delay time td(off) - 178 214 Fall time tf -2 4 2 9 ns Turn-on energy Eon - 0.15 0.173 Turn-off energy Eoff - 0.17 0.221 Total switching energy Ets Tj =25 °C, VCC =400V, IC =10A, VGE =0/15V, RG =25 Ω , Lσ 1) =180nH, Cσ 1) =55pF Energy losses include “tail” and diode reverse recovery. - 0.320 0.394 mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF 220 200 ns Diode reverse recovery charge Qrr - 310 - nC Diode peak reverse recovery current Irrm -4 . 5- A Diode peak rate of fall of reverse recovery current during tb di rr /dt Tj =25 °C, VR =200V, I F =10A, di F /dt =200A/ µ s - 180 - A/µs Switching Characteristic, Inductive Load, at Tj=150 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) -2 8 3 4 Rise time tr -1 2 1 5 Turn-off delay time td(off) - 198 238 Fall time tf -2 6 3 2 ns Turn-on energy Eon - 0.260 0.299 Turn-off energy Eoff - 0.280 0.364 Total switching energy Ets Tj =150 °C VCC =400V, IC =10A, VGE =0/15V, RG =25 Ω Lσ 1) =180nH, Cσ 1) =55pF Energy losses include “tail” and diode reverse recovery. - 0.540 0.663 mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF 350 314 ns Diode reverse recovery charge Qrr - 690 - nC Diode peak reverse recovery current Irrm -6 . 3- A Diode peak rate of fall of reverse recovery current during tb di rr /dt Tj =150 °C VR =200V, I F =10A, di F /dt =200A/ µ s - 200 - A/µs 1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.

4 Sep-02

Figure 1. Collector current as a function of Figure 2. Safe operating area Figure 3. Power dissipation as a function Figure 4. Collector current as a function of

5 Sep-02

Figure 5. Typical output characteristics Figure 6. Typical output characteristics Figure 7. Typical transfer characteristics Figure 8. Typical collector-emitter

6 Sep-02

Figure 9. Typical switching times as a Figure 10. Typical switching times as a Figure 11. Typical switching times as a Figure 12. Gate-emitter threshold voltage

7 Sep-02

Figure 13. Typical switching energy losses Figure 14. Typical switching energy losses Figure 15. Typical switching energy losses Figure 16. IGBT transient thermal

8 Sep-02

Figure 17. Typical gate charge Figure 18. Typical capacitance as a Figure 19. Short circuit withstand time as a Figure 20. Typical short circuit collector

9 Sep-02

Figure 21. Typical reverse recovery time as Figure 22. Typical reverse recovery charge Figure 23. Typical reverse recovery current Figure 24. Typical diode peak rate of fall of

10 Sep-02

Figure 25. Typical diode forward current as Figure 26. Typical diode forward voltage as Figure 27. Diode transient thermal

SKP10N60A, SKB10N60A SKW10N60A

11 Sep-02

symbol [mm] [inch] min max min max A 9.70 10.30 0.3819 0.4055 B 14.88 15.95 0.5858 0.6280 C 0.65 0.86 0.0256 0.0339 D 3.55 3.89 0.1398 0.1531 E 2.60 3.00 0.1024 0.1181 F 6.00 6.80 0.2362 0.2677 G 13.00 14.00 0.5118 0.5512 H 4.35 4.75 0.1713 0.1870 K 0.38 0.65 0.0150 0.0256 L 0.95 1.32 0.0374 0.0520 M 2.54 typ. 0.1 typ. N 4.30 4.50 0.1693 0.1772 P 1.17 1.40 0.0461 0.0551 T 2.30 2.72 0.0906 0.1071 TO-220AB dimensions symbol [mm] [inch] min max min max A 9.80 10.20 0.3858 0.4016 B 0.70 1.30 0.0276 0.0512 C 1.00 1.60 0.0394 0.0630 D 1.03 1.07 0.0406 0.0421 E 2.54 typ. 0.1 typ. F 0.65 0.85 0.0256 0.0335 G 5.08 typ. 0.2 typ. H 4.30 4.50 0.1693 0.1772 K 1.17 1.37 0.0461 0.0539 L 9.05 9.45 0.3563 0.3720 M 2.30 2.50 0.0906 0.0984 N 15 typ. 0.5906 typ. P 0.00 0.20 0.0000 0.0079 Q 4.20 5.20 0.1654 0.2047 R 8° max 8° max S 2.40 3.00 0.0945 0.1181 T 0.40 0.60 0.0157 0.0236 U 10.80 0.4252 V 1.15 0.0453 W 6.23 0.2453 X 4.60 0.1811 Y 9.40 0.3701 TO-263AB (D2Pak) Z 16.15 0.6358

SKP10N60A, SKB10N60A SKW10N60A

12 Sep-02

symbol [mm] [inch] min max min max A 4.78 5.28 0.1882 0.2079 B 2.29 2.51 0.0902 0.0988 C 1.78 2.29 0.0701 0.0902 D 1.09 1.32 0.0429 0.0520 E 1.73 2.06 0.0681 0.0811 F 2.67 3.18 0.1051 0.1252 G 0.76 max 0.0299 max H 20.80 21.16 0.8189 0.8331 K 15.65 16.15 0.6161 0.6358 L 5.21 5.72 0.2051 0.2252 M 19.81 20.68 0.7799 0.8142 N 3.560 4.930 0.1402 0.1941 ∅ P 3.61 0.1421 Q 6.12 6.22 0.2409 0.2449 TO-247AC

SKP10N60A, SKB10N60A SKW10N60A

13 Sep-02

Figure A. Definition of switching times Figure B. Definition of switching losses I rrm 90% I rrm 10% Irrm di /dt F t rr I F i,v tQ S Q F t S t F V R di /dt rr Q= Q Q rr S F t= t t rr S F Figure C. Definition of diodes switching characteristics p(t) 12 n T( t )j n n τ TC rr r r rr Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Lσ =180nH and Stray capacity Cσ =55pF. Published by Infineon Technologies AG,

SKP10N60A, SKB10N60A SKW10N60A

14 Sep-02

St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.