J308 CALOGIC | Alldatasheet

Document overview

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Technical content

J308 – J310 / SST308 – SST310

FEATURES

  • • Industry Standard Part in Low Cost Plastic Package
  • • High Power Gain
  • • Low Noise
  • • Dynamic Range Greater Than 100dB
  • • Easily Matched to 75Ω Input

APPLICATIONS

  • • VHF/UHF Amplifiers
  • • Oscillators
  • • Mixers ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Derate above 25 NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

ORDERING INFORMATION

Part Package Temperature Range J308-310 Plastic TO-92 -55 oC to +135oC SST308-310 Plastic SOT-23 -55 oC to +135oC For Sorted Chips in Carriers see U308 series. CORPORATION PIN CONFIGURATION TO-92 S GD 5021 SOT-23 G S D PRODUCT MARKING (SOT-23) SST308 Z08 SST309 Z09 SST310 Z10

ELECTRICAL CHARACTERISTICS (Continued) (TA = 25oC unless otherwise specified) SYMBOL PARAMETER 308 309 310 UNITS TEST CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX VGS = -10 f = 1MHz en Equivalent Short-Circuit Input Noise Voltage 10 10 10 nV VDS = 10V, ID = 10mA f = 100Hz (Note 2) Re (Vfs) Common-Source Forward Transconductance 12 12 12 µS VDS = 10V, ID = 10mA (Note 2) f = 105MHz Re (Vfg) Common-Gate Input Conductance 14 14 14 Re (Vis) Common-Source Input Conductance 0.4 0.4 0.4 Re (Vos) Common-Source Output Conductance 0.15 0.15 0.15 G pg Common-Gate Power Gain at Noise Match 16 16 16 dBNF Noise Figure 1.5 1.5 1.5 G pg Common-Gate Power Gain at Noise Match 11 11 11 f = 450MHz NF Noise Figure 2.7 2.7 2.7 NOTES: 1. Pulse test PW 300µs, duty cycle ≤3%. 2.For design reference only, not 100% tested. J308 – J310 / SST308 – SST310 CORPORATION ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified) SYMBOL PARAMETER 308 309 310 UNITS TEST CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX BV GSS Gate-Source Breakdown Voltage -25 -25 -25 V I G = -1µA, VDS = 0 IGSS Gate Reverse Current -1.0 -1.0 -1.0 nA V GS = -15V, -1.0 -1.0 -1.0 µAV DS = 0 T A = 125o VGS(off) Gate-Source IDSS Saturation Drain Current (Note 1) 12 60 12 30 24 60 mA V DS = 10V, VGS = 0 VGS(f) Gate-Source Forward Voltage 1.0 1.0 1.0 V V DS = 0, IG = 1mA gfs Common-Source Forward Transconductance 8,000 17,000 10,000 17,000 8,000 17,000 µS VDS = 10V ID = 10mA (Note 2) f = 1kHz gos Common-Source Output Conductance 250 250 250 gfg Common-Gate Forward Transconductance 13,000 13,000 12,000 gog Common Gate Output Conductance 150 150 150