J270 NJSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
£/-\\oaue£i, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 J270 - J271 /SST270 - SST271
FEATURES
- Surface Mount
APPLICATIONS
- P-Channel Amplifier
DESCRIPTION
The J270/SST270 Series is an all-purpose amplifier for designs requiring P-channel operation. These devices feature high gain, low noise and tight VGS(OFF) limits for simple circuit design. They are available in low-cost SOT-23 and TO-92 packages and are fully compatible with automatic insertion techniques.
ORDERING INFORMATION
-55°Cto+135°C -55°Cto+135°C PIN CONFIGURATION SOT-23 TO-92
1 DRAIN
2 GATE
3 SOURCE
1 GATE
2 SOURCE
3 DRAIN
PRODUCT MARKING (SOT-23) SST270 SST271 P20 P21 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
J270 - J271 /SST270 - SST271 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS Gate-Drain Voltage Gate-Source Voltage Gate Current Power Dissipation Power Derating Operating Junction Temperature Storage Temperature Lead Temperature (1/16" from case for 10 seconds) SYMBOL VGD VGS Ic Pr, Tj Tstg TL LIMIT -50 350 2.8 -55 to 150 -55 to 150 300 UNIT V V mA mW mW/°C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) SYMBOL PARAMETER TYP1 270 MIN MAX 271 MIN MAX UNIT TEST CONDITIONS STATIC V(BR)GSS VGS<OFF) loss loss IG VGS<F) Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Current2 Gate Reverse Current Gate Operating Current Gate-Source Forward Voltage -0.7 0.5 2.0 -15 200 1.5 4.5 -50 200 V mA PA nA pA V lG = 1|lA,VDS = VDs = -15V, ID = -1nA Vos = -15V, VGS = OV VGS = 20V, VDS = 0V TA=125°C VDG = -15V, ID IG = -1rnA, VDS = -1mA = OV DYNAMIC gfs 9os Ciss Crss en Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage 200 500 mS uS PF nV VJHz" VDS = -1 5V, VG f= 1kHz VDS ~ -1 5V VG f = 1MHz 3= 0V 3 = OV VDS = -10V, VGS = OV f= 1kHz NOTES: 1. For design aid only, not subject to production testing. 2. Pulse test; PW = 300us, duty cycle < 3%.